Semiconductor device
View Patent ↗A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G 1 formed along a periphery of the chip region CA and a gate finger portion G 2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G 2 , and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
1. A semiconductor device comprising:
a MISFET formed in a chip region of a semiconductor substrate, said MISFET having a gate portion comprised of a first conductor formed in a groove formed in a first surface of the semiconductor substrate, a source portion formed at said first surface, and a drain portion formed at a second surface opposite to said first surface;
a gate electrode and a source electrode electrically connected to said gate portion and said source portion, respectively;
a protective film having first and second openings formed over said gate electrode and said source electrode, respectively;
bump electrodes formed at the first and second openings over said gate electrode and said source electrode; and
a third opening which exposes the source electrode, formed in said protective film;
wherein said gate electrode and source electrode are formed in a same layer;
said bump electrodes are electrically connected to said gate electrode and said source electrode, respectively;
said third opening is used for an inspection process;
said groove has a stripe form extending along a first direction;
said gate electrode has a first portion and a second portion;
said first portion of said gate electrode is formed along a periphery of said chip region;
said second portion of said gate electrode is formed in an area which is surrounded by said first portion of said gate electrode; and
said second portion of said gate electrode extends in a second direction which intersects the first direction.
2. The semiconductor device according to claim 1 ,
wherein said first and second openings have substantially a circular form in plan.
3. The semiconductor device according to claim 1 ,
wherein said third opening has substantially a rectangular form in plan.