Functional device and method for producing the same
View Patent ↗A method of producing a functional device which comprises forming a functional layer containing an organic material, an electrode layer and an insulating layer on a substrate, wherein the step of forming the insulating layer is effected with a temperature T of the substrate being controlled to satisfy the following relationship: T≦Tg ×(Δ E 2/Δ E 1 ) where Tg is a glass transition temperature of the organic material, ΔE1 is an activation energy for crystallization of the organic material measured while the electrode layer and the insulating layer are not stacked on the functional layer and ΔE2 is an activation energy for crystallization of the organic material while the electrode layer is formed on the functional layer.
1. A method of producing a functional device which comprises
forming a functional layer containing an organic material, an electrode layer and an insulating layer on a substrate,
wherein the step of forming the insulating layer is effected with a temperature T of the substrate being controlled to satisfy the following relationship:
T≦Tg ×(Δ E 2/ ΔE 1)
where Tg is a glass transition temperature of the organic material, ΔE1 is an activation energy for crystallization of the organic material measured while the electrode layer and the insulating layer are not stacked on the functional layer and ΔE2 is an activation energy for crystallization of the organic material while the electrode layer is formed on the functional layer.
2. The method of producing a functional device as defined in claim 1 , wherein the step of stacking the insulating layer is effected with the temperature T of the substrate being controlled to 200° C. or less.
3. The method of producing a functional device as defined in claim 1 , wherein the electrode layer comprises a light-transmitting material.
4. The method of producing a functional device as defined in claim 3 , wherein the electrode layer comprises at least one of ITO, IZO, SnO 2 , ATO, ZnO and FTO.
5. The method of producing a functional device as defined in claim 1 , wherein the insulating layer comprises silicon oxide or silicon nitride.
6. The method of producing a functional device as defined in claim 1 , wherein the insulating layer is formed by plasma CVD.
7. The method of producing a functional device as defined in claim 1 , wherein the insulating layer is formed by sputtering.
8. The method of producing a functional device as defined in claim 1 , wherein the functional device is a photoelectric conversion layer stacked type solid-state image pickup device, the method comprising:
stacking a photoelectric conversion layer containing an organic material on a substrate having a signal reading circuit formed thereon; and
stacking an electrode layer and an insulating layer on the photoelectric conversion layer.
9. The method of producing a functional device as defined in claim 1 , wherein the functional device is an organic light-emitting element.
10. A functional device produced by a method of producing a functional device defined in claim 1 .