Low compressive TiN

1. A microelectromechanical device comprising a deflectable reflective mirror plate, wherein the deflectable reflective mirror plate comprises TiN x , wherein the TiN x has a compressive stress that is greater than −800 MPa with a thickness of 500 angstroms or less.

2. The device of claim 1 , wherein the thickness of the TiN x is 200 angstroms or less.

3. The device of claim 1 , wherein the thickness of the TiN x is from 40 to 500 angstroms.

4. The device of claim 1 , wherein the compressive stress is −200 MPa or greater.

5. The device of claim 4 , wherein the thickness of the TiN x is 200 angstroms or less.

6. The device of claim 4 , wherein the thickness of the TiN x is 150 angstroms or less.

7. The device of claim 1 , wherein the microelectromechanical device is a micromirror device, and wherein the TiN x is a layer of the deflectable reflective mirror plate of the micromirror device.

8. The device of claim 7 , wherein the mirror plate further comprises an electrically insulating layer.

9. The device of claim 8 , wherein the electrically insulating layer comprises SiO x .

10. The device of claim 1 , wherein the microelectromechanical device is a micromirror device comprising a deformable hinge attached to the mirror plate, and wherein the deformable hinge comprises a TiN x layer.

11. The device of claim 10 , wherein the deformable hinge further comprises an insulating layer.

12. The device of claim 11 , wherein the insulating layer comprises SiN x .

13. The device of claim 10 , wherein the TiN x layer is laminated between two insulating layers.

14. The device of claim 13 , wherein one of the two insulating layers comprises SiN x .

15. The device of claim 11 , wherein the TiN x layer has a thickness of 500 angstroms or less.

16. The device of claim 11 , wherein the deformable hinge is attached to a light transmissive substrate.

17. The device of claim 11 , wherein the deformable hinge is attached to a semiconductor substrate.

18. The device of claim 1 , wherein the stoichiometric ratio of titanium to nitrogen is from 0.9 to 1.3.

19. The device of claim 1 , wherein the stoichiometric ratio of titanium to nitrogen is less than 1.

20. The device of claim 1 , wherein the TiN x is formed with DC magnetron sputtering in the absence of RF power.

21. The device of claim 1 , wherein the TiN x has no oxygen.

22. The device of claim 1 , wherein the TiN x comprises oxygen in an amount of greater than 0 (zero) but less than 15%.

23. A micro electromechanical device, comprising: an element that comprises a TiN x having a compressive stress σ and a thickness t, wherein the stress σ is expressed as:

σ

≥

σ

o

+

M

t

-

t

o

wherein σ o is a constant that is 250 MPa or less; M is a constant that is −1.6×10 6 MPaÅ or greater; and t o is a constant that is 380 or less.

24. The device of claim 23 , wherein oxygen is absent from the TiN x material.

25. The device of claim 23 , wherein the TiN x material comprises oxygen in an amount of greater than 0 (zero) but less than 15%.

26. The device of claim 23 , wherein M is −9.43×10 5 MPaÅ or greater.

27. The device of claim 23 , wherein M is −6.6×10 5 MPaÅ or greater.

28. The device of claim 23 , wherein M is −2.83×10 5 MPaÅ or greater.

29. The device of claim 23 , wherein M is −4.87×10 4 MPaÅ or greater.

30. The device of claim 23 , wherein t o is 260 or less.

31. The device of claim 23 , wherein t o is 190 or less.

32. The device of claim 23 , wherein t o is 100 or less.

33. The device of claim 23 , wherein t o is substantially 0 (zero).

34. The device of claim 23 , wherein the stoichiometric ratio of titanium to nitrogen is from 0.87 to 1.3.

35. The device of claim 23 , wherein the stoichiometric ratio of titanium to nitrogen is from 0.94 to 1.28.

36. The device of claim 23 , wherein the stoichiometric ratio of titanium to nitrogen is less than 1.

37. The device of claim 23 , wherein the TiN x is formed with DC magnetron sputtering in the absence of RF power.

38. The device of claim 23 , wherein the microelectromechanical device is a micromirror device; wherein the TiN x is a layer of a deformable hinge of the micromirror device that comprises a reflective deflectable mirror plate; and wherein the mirror plate is attached to the deformable hinge such that the mirror plate is capable of being deflected relative to a substrate on which the micromirror device is formed.

39. The device of claim 38 , wherein the mirror plate comprises a TiN x layer.

40. The device of claim 39 , wherein the deformable hinge further comprises an electrically insulating layer.

41. The device of claim 40 , wherein the electrically insulating layer comprises SiO x .

42. The device of claim 40 , wherein the mirror plate comprises a reflective layer comprising a reflective material that reflects 90% or more of an incident light beam.

43. The device of claim 42 , wherein the reflective material is gold.

44. The device of claim 42 , wherein the reflective material is silver.

45. The device of claim 42 , wherein the reflective material is aluminum.

46. The device of claim 42 , wherein the mirror plate further comprises an electrically insulating layer.

47. The device of claim 46 , wherein the electrically insulating layer comprises SiO x .

48. The device of claim 47 , wherein the mirror plate further comprises another electrically conductive layer other than TiN x .

49. The device of claim 48 , wherein the electrically conductive layer comprises titanium.

50. The device of claim 38 , wherein the substrate is transmissive to visible light.

51. The device of claim 50 , wherein the mirror plate is associated with an addressing electrode on a semiconductor substrate.

52. The device of claim 51 , wherein the semiconductor substrate and light transmissive substrate are bonded together.

53. The device of claim 52 , wherein the micromirror is a member of an array of micromirrors; wherein the addressing electrode is a member of an array of addressing electrodes each of which being associated with one of the micromirrors of the micromirror array; and wherein the micromirror array and the associated addressing electrode array form a micromirror array device.

54. The device of claim 53 , wherein each micromirror has one signal addressing electrode associated therewith.

55. The device of claim 38 , wherein the substrate is a semiconductor substrate having formed thereon an addressing electrode.

56. A projection system, comprising:

an illumination system providing an illumination light beam;

a spatial light modulator comprising an array of micromirrors each of which comprises a deflectable reflective mirror plate comprising TiN x , wherein the TiN x has a compressive stress that is greater than −800 MPa with a thickness of 500 angstroms or less for spatially modulating the illumination light beam so as to generate an image; and

a projection lens for projecting the modulated illumination light onto a display target.

57. The system of claim 56 , wherein the illumination system comprises a light source, a lightpipe; and a color wheel.

58. The system of claim 57 , wherein the lightpipe is positioned between the light source and the color wheel along a propagation path of the illumination light beam.

59. The system of claim 57 , wherein the lightpipe is positioned after the light source and color wheel along a propagation path of the illumination light beam.

60. The system of claim 56 , wherein the illumination system comprises a LED.

61. The system of claim 56 , wherein oxygen is absent from the TiN x .

62. The system of claim 56 , wherein the TiN x comprises oxygen in an amount greater than 0 (zero) but less than 15%.

63. A projection system, comprising:

an illumination system providing an illumination light beam;

a spatial light modulator comprising an array of micromirrors, each of which comprises: a deformable hinge comprising TiN x having a compressive stress σ and a thickness t, wherein the stress σ is expressed as:

σ

≥

σ

o

+

M

t

-

t

o

wherein σ o is a constant that is 250 MPa or less; M is a constant that is −1.6×10 6 MPaÅ or greater; and t o is a constant that is 380 or less; and

a projection lens for projecting the modulated illumination light onto a display target.

64. The system of claim 63 , wherein the illumination system comprises a light source, a lightpipe; and a color wheel.

65. The system of claim 63 , wherein the lightpipe is positioned between the light source and the color wheel along a propagation path of the illumination light beam.

66. The system of claim 64 , wherein the lightpipe is positioned after the light source and color wheel along a propagation path of the illumination light beam.

67. The system of claim 63 , wherein the illumination system comprises a LED.

68. A microelectromechanical device a deformable hinge, wherein the deformable hinge comprises TiN x , wherein the TiN x has a compressive stress that is greater than −800 MPa with a thickness of 500 angstroms or less.

69. The device of claim 68 , wherein the thickness of the TiN x is 200 angstroms or less.

70. The device of claim 68 , wherein the thickness of the TiN x is from 40 to 500 angstroms.

71. The device of claim 68 , wherein the compressive stress is −200 MPa or greater.

72. The device of claim 71 , wherein the thickness of the TiN x is 200 angstroms or less.

73. The device of claim 71 , wherein the thickness of the TiN x is 150 angstroms or less.

74. The device of claim 68 , wherein the microelectromechanical device is a micromirror device comprising a deflectable reflective mirror plate attached to the deformable hinge, and wherein the mirror plate comprises a TiN x layer.

75. The device of claim 74 , wherein the mirror plate further comprises an electrically insulating layer.

76. The device of claim 75 , wherein the electrically insulating layer comprises SiO x .

77. The device of claim 74 , wherein the TiN x layer has a thickness of 500 angstroms or less.

78. The device of claim 68 , wherein the deformable hinge further comprises an insulating layer.

79. The device of claim 78 , wherein the insulating layer comprises SiN x .

80. The device of claim 68 , wherein the TiN x is laminated between two insulating layers.

81. The device of claim 80 , wherein one of the two insulating layers comprises SiN x .

82. The device of claim 68 , wherein the deformable hinge is attached to a light transmissive substrate.

83. The device of claim 68 , wherein the deformable hinge is attached to a semiconductor substrate.

84. The device of claim 68 , wherein the stoichiometric ratio of titanium to nitrogen is from 0.9 to 1.3.

85. The device of claim 68 , wherein the stoichiometric ratio of titanium to nitrogen is less than 1.

86. The device of claim 68 , wherein the TiN x is formed with DC magnetron sputtering in the absence of RF power.

87. The device of claim 68 , wherein the TiN x has no oxygen.

88. The device of claim 68 , wherein the TiN x comprises oxygen in an amount of greater than 0 (zero) but less than 15%.

89. A projection system, comprising:

an illumination system providing an illumination light beam;

a spatial light modulator comprising an array of micromirrors each of which comprises a deformable hinge comprising TiN x , wherein the TiN x has a compressive stress that is greater than −800 MPa with a thickness of 500 angstroms or less for spatially modulating the illumination light beam so as to generate an image; and

a projection lens for projecting the modulated illumination light onto a display target.

90. The system of claim 89 , wherein the illumination system comprises a light source, a lightpipe; and a color wheel.

91. The system of claim 90 , wherein the lightpipe is positioned between the light source and the color wheel along a propagation path of the illumination light beam.

92. The system of claim 90 , wherein the lightpipe is positioned after the light source and color wheel along a propagation path of the illumination light beam.

93. The system of claim 89 , wherein the illumination system comprises a LED.

94. The system of claim 89 , wherein oxygen is absent from the TiN x .

95. The system of claim 89 , wherein the TiN x comprises oxygen in an amount greater than 0 (zero) but less than 15%.

96. A projection system, comprising:

an illumination system providing an illumination light beam;

a spatial light modulator comprising an array of micromirrors, one of which comprises:

an element that comprises a TiN x having a compressive stress σ and a thickness t, wherein the stress σ is expressed as:

σ

≥

σ

o

+

M

t

-

t

o

wherein σ 0 is a constant that is 250 MPa or less; M is a constant that is −1.6×10 6 MPaÅ or greater; and t o is a constant that is 380 or less; and

a projection lens for projecting the modulated illumination light onto a display target.

97. The system of claim 96 , wherein the illumination system comprises a light source, a lightpipe; and a color wheel.

98. The system of claim 96 , wherein the lightpipe is positioned between the light source and the color wheel along a propagation path of the illumination light beam.

99. The system of claim 97 , wherein the lightpipe is positioned after the light source and color wheel along a propagation path of the illumination light beam.

100. The system of claim 96 , wherein the illumination system comprises a LED.