Thin film transistor device and method of manufacturing the same
View Patent ↗A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.
1. A thin film transistor device manufacturing method comprising the steps of:
forming a semiconductor film in a thin film transistor forming region on a substrate;
forming a gate insulating film and a gate electrode on the semiconductor film;
forming an interlayer insulating film on an overall upper surface of the substrate;
forming a first conductive film as a display electrode on the interlayer insulating film;
forming contact holes, which reach the semiconductor film from a surface of the first conductive film, by a photolithography method;
forming a second conductive film on the overall upper surface of the substrate;
forming a resist film, which covers a wiring forming region and a display electrode forming region, on the second conductive film;
etching the second conductive film and the first conductive film while using the resist film as a mask;
removing the resist film in the display electrode forming region to leave the resist film in the wiring forming region; and
removing the second conductive film on the display electrode forming region by an etching using the resist film as a mask.
2. A thin film transistor device manufacturing method according to claim 1 , wherein the first conductive film is formed of transparent conductor.
3. A thin film transistor device manufacturing method according to claim 1 , wherein the resist film is formed thick in the wiring forming region and thin in the display electrode forming region.
4. A thin film transistor device manufacturing method according to claim 1 , wherein the gate electrode is formed to have a width that is narrower than the gate insulating film, and high-concentration impurity diffusion regions and LDD regions are formed by implanting plural times an impurity into the semiconductor film at different acceleration energies.