Preparation of a substrate

1 . A method of preparing a substrate for the fabrication of organic semiconductor components, the method comprising:

affixing a substrate to a carrier via an adhesive film;

preparing said substrate; and

canceling the adhesive action of the adhesive film so that said substrate can be separated from said carrier.

2 . The method as recited in claim 1 , wherein said adhesive film is coated with adhesive on both sides and wherein the affixing of said substrate to said carrier includes:

adhesively bonding said adhesive film to said carrier; and

adhesively bonding said substrate to the side of said adhesive film facing away from said carrier.

3 . The method as recited in claim 1 , wherein said adhesive film is coated with adhesive on at least one side and wherein the mounting of said substrate on said carrier includes:

stretch-applying said adhesive film to said carrier, a side coated with adhesive being disposed on the side facing away from said carrier;

adhesively bonding said substrate to said side of said adhesive film that is coated with adhesive and faces away from said carrier.

4 . The method as recited in claim 1 , wherein said adhesive film is composed of a layer of adhesive material whose adhesive action is canceled by said detaching step.

5 . The method as recited in claim 1 , wherein said adhesive film comprises a carrier film and at least one layer of adhesive material whose adhesive action is canceled by said detaching step.

6 . The method as recited in claim 1 , wherein said adhesive film comprises a carrier film and two layers of adhesive material, at least one of which two layers comprises an adhesive material whose adhesive action is canceled by said detaching step.

7 . The method as recited in claim 6 , wherein one of said two layers comprises an adhesive material whose adhesive action is not canceled by said detaching step.

8 . The method as recited in claim 1 , wherein said detaching step includes exposing said adhesive film to a set temperature for a set period of time.

9 . The method as recited in claim 8 , wherein said set temperature is between 80° C. and 110° C.

10 . The method as recited in claim 8 , wherein said set temperature is between 110° C. and 140° C.

11 . The method as recited in claim 8 , wherein said set temperature is between 140° C. and 160° C.

12 . The method as recited in claim 8 , wherein said set temperature is between 160° C. and 180° C.

13 . The method as recited in claim 1 , wherein said detaching step includes subjecting said adhesive film for a set period of time to irradiation with UV light having a wavelength between 100 and 240 nm.

14 . The method as recited in claim 1 , wherein said detaching step includes subjecting said adhesive film for a set period of time to irradiation with UV light having a wavelength between 240 and 320 nm.

15 . The method as recited in claim 1 , wherein said detaching step includes subjecting said adhesive film for a set period of time to irradiation with UV light having a wavelength between 320 and 400 nm.

16 . The method as recited in claim 8 , wherein said set period of time is between 50 and 70 seconds.

17 . The method as recited in claim 6 , wherein when said substrate is separated from said carrier, said carrier film of said adhesive film remains on said carrier.

18 . The method as recited in claim 6 , wherein when said substrate is separated from said carrier, said carrier film of said adhesive film remains on said substrate.

19 . The method as recited in claim 6 , wherein when said substrate is separated from said carrier, said carrier film of said adhesive film is detached both from said carrier and from said substrate.

20 . (canceled)

21 . A system, comprising:

a substrate;

a carrier layer;

a carrier film between the substrate and the carrier layer; and

an adhesive layer between the substrate and the carrier layer,

wherein the system comprises a portion of an organic semiconductor.