Photodiode with fiber mode dispersion compensation
View Patent ↗A photodiode and a method of fabricating a photodiode for reducing modal dispersion and increasing travel distance. The central region of the photodiode is made less responsive to incident light than a peripheral region of the photodiode. The less responsive central region discriminates the lower order modes such that only the higher order modes are incident on the more responsive peripheral region. Because the lower order modes are subtracted, the range of propagation constants is reduced and modal dispersion is also reduced.
1. A method of fabricating a photodiode on a semiconductor substrate, the photodiode having a surface having a central region and a peripheral region, comprising:
forming an n-type layer on the semiconductor substrate;
forming an intrinsic layer on the semiconductor substrate coupled to the n-type layer;
forming a p-type layer on the semiconductor substrate coupled to the intrinsic layer; and
forming the peripheral region that is concentric with the central region, wherein the peripheral region is optically sensitive to light and the central region is made at least partially optically dead, thereby rendering the photodiode less responsive to incident light on the central region than to incident light on the peripheral region, the incident light including higher order mode groups and lower order mode groups, wherein the peripheral region and the central region are sized and configured such that the lower order mode groups are incident substantially on the central region.
2. the method of claim 1 , wherein rendering the photodiode less responsive to incident light on the central region than to incident light on the peripheral region comprises performing proton implantation penetrating at least a portion of the p-type layer, the intrinsic layer, and the n-type layer in the central region.
3. The method of claim 1 , wherein rendering the photodiode less responsive to incident light on the central region than to incident light on the peripheral region comprises performing oxygen implantation penetrating at least a portion of the p-type layer, the intrinsic layer, and the n-type layer in the central region.
4. The method of claim 1 , wherein rendering the photodiode less responsive to incident light on the central region than to incident light on the peripheral region comprises masking the central region with opaque material.
5. The method of claim 1 , wherein rendering the photodiode less responsive to incident light on the central region than to incident light on the peripheral region comprises masking the central region with metal.
6. The method of claim 1 , wherein rendering the photodiode less responsive to incident light on the central region than to incident light on the peripheral region comprises rendering the photodiode unresponsive to incident light in the central region.
7. The method of claim 1 , wherein the method further comprises:
forming a cathode contact on the n-type layer; and
forming an anode contact on the p-type layer.
8. A photodiode comprising:
an n-type layer;
an intrinsic layer coupled to the n-type layer;
a p-type layer coupled to the intrinsic layer;
wherein the photodiode has a region comprising a central region and a peripheral region, wherein the peripheral region is optically sensitive to light and the central region is at least partially optically dead such that the photodiode is less responsive to incident light on the central region than to incident light on the peripheral region, the incident light including higher order mode groups and lower order mode groups, wherein the peripheral region is concentric with the central region such that the lower order mode groups are incident substantially on the central region.
9. The device of claim 8 , wherein the photodiode further comprises a proton implant penetrating at least portions of the p-type layer, the intrinsic layer, and the n-type layer in the central region.
10. The device of claim 8 , wherein the photodiode further comprises an oxygen implant penetrating at least portions of the p-type layer, the intrinsic layer, and the n-type layer in the central region.
11. The device of claim 8 , wherein the central region comprises an opaque mask.
12. The device of claim 8 , wherein the central region comprises metal.
13. The device of claim 8 , wherein the photodiode is substantially unresponsive to incident light on the central region.
14. The device of claim 8 , wherein the photodiode further comprises:
a cathode contact coupled to the n-type layer; and
an anode contact coupled to the p-type layer.
15. A method for receiving information through a multimode fiber, comprising:
receiving an optical signal having higher order mode groups and lower order mode groups from the multimode fiber onto a surface of a receiver having a central region and a peripheral region, the lower order mode groups being incident substantially on the central region; and
generating an output electrical signal in response to incident light on the peripheral region, while being less responsive to incident light on the central region than to incident light on the peripheral region due to proton implantation in the central region.
16. The method of claim 15 , further comprising processing the electrical signal in a circuit.
17. The method of claim 15 , wherein the receiver is substantially unresponsive to incident light on the central region.