Organic thin film transistor array panel and manufacturing method thereof

1. An organic thin film transistor array panel comprising:

a substrate;

a data line disposed on the substrate;

an interlayer insulating layer disposed on the data line;

a gate line disposed on the interlayer insulating layer and including a gate electrode;

a gate insulating layer disposed on the gate line and the interlayer insulating layer, the gate insulating layer and the interlayer insulating film having a contact hole exposing the data line;

a first electrode disposed on the gate insulating layer and connected to the data line through the contact hole;

a second electrode disposed opposite the first electrode with respect to the gate electrode;

an organic semiconductor disposed on the first electrode and the second electrode and contacting the first electrode and the second electrode; and

a passivation member disposed on the organic semiconductor.

2. The organic thin film transistor array panel of claim 1 , wherein the first electrode and the second electrode comprise ITO.

3. The organic thin film transistor array panel of claim 2 , wherein the second electrode comprises a pixel electrode.

4. The organic thin film transistor array panel of claim 1 , further comprising an insulator disposed between the organic semiconductor and the passivation member.

5. The organic thin film transistor array panel of claim 4 , wherein the insulator comprises a fluorine containing hydrocarbon based polymer or a parylene.

6. The organic thin film transistor array panel of claim 1 , wherein the interlayer insulating film comprises silicon nitride (SiN x ), polyacryl, polyimide, or benzocyclobutene.

7. The organic thin film transistor array panel of claim 1 , wherein the gate insulating layer comprises at least one selected from the group consisting of silicon dioxide, silicon nitride, maleimide-styrene, polyvinylphenol (PVP), and modified cyanoethyl pullulan (m-CEP).

8. The organic thin film transistor array panel of claim 1 , wherein the organic semiconductor comprises at least one selected from the group consisting of:

tetracene, pentacene, and derivatives thereof with substituent;

oligothiophene including four to eight thiophenes connected at the positions 2, 5 of thiophene rings;

perylenetetracarboxylic dianhydride (PTCDA), naphthalenetetracarboxylic dianhydride (NTCDA), and imide derivatives thereof;

metallized phthalocyanine and halogenated derivatives thereof;

co-oligomer and co-polymer of thienylene and vinylene;

regioregular polythiophene;

perylene, coronene, and derivatives thereof with substituent; and

aromatic and heteroaromatic ring of the above-described materials with at least one hydrocarbon chain having one to thirty carbon atoms.

9. A method for manufacturing an organic thin film transistor array panel, the method comprising:

forming a data line on a substrate;

forming an interlayer insulating film on the data line;

forming a gate line on the interlayer insulating film;

forming a gate insulating layer on the gate line and the interlayer insulating film, the gate insulating layer and the interlayer insulating film having a contact hole exposing the data line;

forming a first electrode and a second electrode on the gate insulating layer, the first electrode connected to the data line through the contact hole and the second electrode separated from the first electrode;

forming an organic semiconductor on the first electrode and the second electrode and which contacts the first electrode and the second electrode; and

forming a passivation member on the organic semiconductor.

10. The method of claim 9 , further comprising:

forming an insulator on the organic semiconductor and under the passivation member.

11. The method of claim 9 , wherein the first electrode and the second electrode comprises ITO.

12. The method of claim 10 , wherein forming an insulator on the organic semiconductor and under the passivation member comprises:

forming an insulator comprising a fluorine containing hydrocarbon based polymer or a parylene on the organic semiconductor and under the passivation member.

13. An organic thin film transistor array panel comprising:

a substrate;

a data line disposed on the substrate;

an interlayer insulating layer disposed on the data line;

a gate line disposed on the interlayer insulating layer and including a gate electrode;

a gate insulating layer disposed on the gate line and the interlayer insulating layer, the gate insulating layer and the interlayer insulating film having a contact hole exposing the data line;

a first electrode disposed on the gate insulating layer and connected to the data line through the contact hole;

a second electrode disposed opposite the first electrode with respect to the gate electrode;

an organic semiconductor disposed on the first and second electrodes and contacting the first and second electrodes; and

a passivation member disposed on the organic semiconductor, and wherein the first and second electrodes comprise ITO.

14. The organic thin film transistor array panel of claim 13 , wherein the second electrode comprises a pixel electrode.