Organic semiconductor transistor with banks confining the semiconductor

1. An organic thin film transistor array panel comprising:

a substrate;

a data line formed on the substrate and including a source electrode;

a drain electrode formed on the substrate and separated from the data line;

an organic semiconductor disposed on the source electrode and the drain electrode;

a bank having an opening that confines the organic semiconductor;

a gate insulator formed on the organic semiconductor;

a gate line including a gate electrode disposed on the gate insulator;

a passivation layer formed on the gate line and having a first contact hole on the drain electrode, wherein the bank has a second contact hole exposing the drain electrode together with the first contact hole;

a pixel electrode connected to the drain electrode through the first contact hole; and

an opaque light blocking member disposed under the organic semiconductor.

2. The organic thin film transistor array panel of claim 1 wherein the gate insulator is confined in the opening.

3. The organic thin film transistor array panel of claim 1 , wherein the opaque light blocking member is formed on the substrate in alignment with the organic semiconductor.

4. The organic thin film transistor array panel of claim 3 , further comprising an insulating layer disposed between the organic semiconductor and the light blocking member.

5. The organic thin film transistor array panel of claim 1 , wherein the gate insulator comprises at least one selected from the group consisting of silicon dioxide, silicon nitride, maleimide-styrene, polyvinylphenol (PVP), and modified cyanoethyl pullulan (m-CEP).

6. The organic thin film transistor array panel of claim 5 , wherein the gate insulator comprises an organic material.

7. The organic thin film transistor array panel of claim 1 , wherein the organic semiconductor comprises at least one selected from the group consisting of:

tetracene, pentacene, and derivatives thereof with substituent;

oligothiophene including four to eight thiophenes connected at the positions 2 , 5 of thiophene rings;

perylenetetracarboxylic dianhydride (PTCDA), naphthalenetetracarboxylic dianhydride (NTCDA), and imide derivatives thereof;

metallized phthalocyanine and halogenated derivatives thereof;

co-oligomer and co-polymer of thienylene and vinylene;

regioregular polythiophene;

perylene, coronene, and derivatives thereof with substituent; and

aromatic and heteroaromatic ring of the above-described materials with at least one hydrocarbon chain having one to thirty carbon atoms.

8. The organic thin film transistor array panel of claim 1 , wherein the gate electrode substantially fully covers the gate insulator.

9. The organic thin film transistor array panel of claim 1 , further comprising:

an insulating layer formed under the data line and the drain electrode;

a color filter formed under the insulating layer; and

the light blocking member formed under the color filter and in alignment with the organic semiconductor.

10. The thin film transistor array panel of claim 1 , further comprising a color filter formed under the passivation layer.

11. An organic thin film transistor array panel comprising:

a substrate;

a data line formed on the substrate and including a source electrode;

a drain electrode formed on the substrate and separated from the data line;

an organic semiconductor disposed on the source electrode and the drain electrode;

a bank having an opening that confines the organic semiconductor;

a gate insulator formed on the organic semiconductor, wherein the gate insulator is confined in the opening;

a gate line including a gate electrode disposed on the gate insulator;

a passivation layer formed on the gate line and having a first contact hole on the drain electrode;

a pixel electrode connected to the drain electrode through the first contact hole; and

an opaque light blocking member disposed under the organic semiconductor.