Integration circuit, decrement circuit, and semiconductor devices
An ignitor comprising a circuit with a millisecond order time constant and with a minimum circuit size and area, which is capable of self-shutdown without leading to erroneous ignition upon detection of an abnormality. An ignitor 1 capable of self-shutdown upon detection of an abnormality comprises an abnormality detection circuit 12 whose rise output is applied to the gate of a self-shutdown MOSFET 33 via an integration circuit 33 comprised of a diode 8 and a capacitor 9 . The gate voltage of IGBT 5 a , which is a main-current switching device, can be decremented.
1. An integration circuit comprising a diode and a capacitor,
wherein said diode and said capacitor are connected in series between an input terminal and ground, wherein a cathode terminal of said diode is used as said input terminal and an anode terminal of said diode is connected to one end of said capacitor and used as an output terminal, the other end of said capacitor being connected to ground.
2. The integration circuit according to claim 1 , wherein said diode comprises diodes in multiple stages.
3. The integration circuit according to claim 1 , wherein said diode comprises a diode-connected MOSFET.
4. The integration circuit according to claim 1 , wherein said diode comprises a diode-connected bipolar transistor.
5. A decrement circuit comprising the integration circuit according to claim 1 , further comprising a resistor and a MOSFET, wherein said resistor and said MOSFET are connected in series between a power supply terminal and ground, wherein a connection point between said resistor and said MOSFET is used as an output terminal, and wherein the output of said integration circuit is connected to the gate of said MOSFET.
6. An integration circuit comprising a diode and a capacitor, wherein said diode and said capacitor are disposed between an input terminal and ground, wherein one end of said diode is connected to said input terminal via a first resistor element, the other end of said diode is connected to one end of a second resistor element, one end of said capacitor is connected to one end of a third resistor element, the other end of said second resistor element and the other end of said third resistor element are connected to an output terminal, and the other end of said capacitor is connected to ground via a fourth resistor element, and wherein the resistance values of said first through said fourth resistor elements are smaller than the reverse leakage resistance of said diode.
7. The integration circuit according to claim 6 , wherein one or more of said first resistor element, said second resistor element, said third resistor element, and said fourth resistor element are provided by the resistance of their leads or other resistance relating to connection.
8. An integration circuit comprising a diode and a capacitor,
wherein said diode and said capacitor are connected in series between an input terminal and ground,
wherein one end of said diode is used as said input terminal and the other end of said diode is connected to one end of said capacitor and used as an output terminal, the other end of said capacitor being connected to ground, and
wherein said diode comprises diodes in multiple stages.
9. A decrement circuit comprising an integration circuit, a resistor, and a MOSFET,
wherein the integration circuit comprises a diode and a capacitor, said diode and said capacitor being connected in series between an input terminal and ground, one end of said diode being used as said input terminal and the other end of said diode being connected to one end of said capacitor and used as an output terminal, and the other end of said capacitor being connected to ground,
wherein said resistor and said MOSFET are connected in series between a power supply terminal and ground,
wherein a connection point between said resistor and said MOSFET is used as an output terminal, and
wherein the output of said integration circuit is connected to the gate of said MOSFET.