Color light receiving device and image pickup device

1. A light receiving device comprising a single semiconductor substrate and a light receiving device that has a first photoelectric conversion part and a second photoelectric conversion part and is provided on or above an light entering side of the semiconductor substrate, wherein:

the single semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply stacked manner, wherein the second conductivity type is a conductivity type opposite to the first conductivity type;

each of junction surfaces between the regions of the first conductivity type and the regions of the second conductivity type is formed to have a depth which enables converting light, which is mainly in the blue or red wavelength regions, to electricity;

the first photoelectric conversion part and second photoelectric conversion part detect light in two different wavelength regions; and

the respective detected wavelengths of the first photoelectric conversion part and second photoelectric conversion part are longer than the central wavelength of the blue wavelength region, and shorter than the central wavelength of the red wavelength region.

2. A light receiving device according to claim 1 , wherein an insulating layer is provided between the semiconductor substrate and the photoelectric conversion parts.

3. A light receiving device according to claim 1 , wherein the photoelectric conversion parts and the semiconductor substrate are spaced apart from each other provided with a separation between each other.

4. A light receiving device according to claim 1 , wherein the semiconductor substrate is a silicon substrate, and has a structure selected from the group consisting of an npn junction and a pnpn junction, in which the p-n order is listed from the light entering side of the silicon substrate.

5. A light receiving device according to claim 1 , wherein the first photoelectric conversion part has a maximum value in a frequency range of 500 to 530 nm, and the second photoelectric conversion part has a maximum value in a frequency range of 530 to 600 nm.

6. A light receiving device according to claim 1 , wherein the first photoelectric conversion part is disposed closer to the light entering side than the second photoelectric conversion part.

7. A light receiving device according to claim 1 , wherein the first photoelectric conversion part and the second photoelectric conversion part are respectively made from organic semiconductors.

8. An image pickup device in which a plurality of light receiving devices are arranged, wherein the light receiving device comprises a light receiving device comprising a single semiconductor substrate and a light receiving device that has a first photoelectric conversion part and a second photoelectric conversion part and is provided on or above an light entering side of the semiconductor substrate, wherein:

the single semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply stacked manner, wherein the second conductivity type is a conductivity type opposite to the first conductivity type;

each of junction surfaces between the regions of the first conductivity type and the regions of the second conductivity type is formed to have a depth which enables converting light, which is mainly in the blue or red wavelength regions, to electricity;

the first photoelectric conversion part and second photoelectric conversion part detect light in two different wavelength regions; and

the respective detected wavelengths of the first photoelectric conversion part and second photoelectric conversion part are longer than the central wavelength of the blue wavelength region, and shorter than the central wavelength of the red wavelength region.

9. An image pickup device according to claim 8 , wherein an insulating layer is provided between the semiconductor substrate and the photoelectric conversion parts.

10. An image pickup device according to claim 8 , wherein the photoelectric conversion parts and the semiconductor substrate are spaced apart from each other provided with a separation between each other.

11. An image pickup device according to claim 8 , wherein the semiconductor substrate is a silicon substrate, and has a structure selected from the group consisting of an npn junction and a pnpn junction, in which the p-n order is listed from the light entering side of the silicon substrate.

12. An image pickup device according to claim 8 , wherein the first photoelectric conversion part has a maximum value in a frequency range of 500 to 530 nm, and the second photoelectric conversion part has a maximum value in a frequency range of 530 to 600 nm.

13. An image pickup device according to claim 8 , wherein the first photoelectric conversion part is disposed closer to the light entering side than the second photoelectric conversion part.

14. An image pickup device according to claim 8 , wherein the first photoelectric conversion part and the second photoelectric conversion part are respectively made from organic semiconductors.

15. An image pickup device according to claim 8 , which is used as a CMOS image sensor.

16. An image pickup device according to claim 8 , which is used as a CCD image sensor.