Method of manufacturing electronic device
After forming an insulating film on an underlying layer, a resist pattern is formed on the insulating film. The insulating film is etched by using the resist pattern as a mask, thereby forming an insulating film pattern. Without removing the resist pattern, exposed portions of the underlying layer and the insulating film pattern are subjected to a plasma treatment, cleaning, a heat treatment or the like, so that a deposition grown during the formation of the insulating film pattern can be removed. Thereafter, the underlying layer is etched by using at least the insulating film pattern as a mask. As a result, even when a strict pattern rule is employed, pattern defects can be prevented from being caused in etching a multi-layer film.
1 . A method of manufacturing an electronic device comprising the steps of:
(a) forming, on an underlying layer, an insulating film made from one of an oxide film, a nitride film, an oxinitride film, an organic film and an organic-inorganic hybrid film;
(b) forming a resist pattern on said insulating film;
(c) forming an insulating film pattern by etching said insulating film with said resist pattern used as a mask;
(d) conducting a plasma treatment on exposed portions of said underlying layer and said insulating film pattern without removing said resist pattern after the step (c); and
(e) etching said underlying layer with said resist pattern and said insulating film pattern used as a mask.
2 . The method of manufacturing an electronic device of claim 1 ,
wherein said underlying layer is made from one of a monosilicon layer, a silicon substrate, a polysilicon film, an amorphous silicon film, an organic film, an organic-inorganic hybrid film, a nitride film and an oxide film, and
said underlying layer is etched with a chlorine-containing gas or a bromine-containing gas in the step (e).
3 . The method of manufacturing an electronic device of claim 1 ,
wherein said insulating film is made from one of an oxide film, a nitride film, an oxinitride film, an organic film and an organic-inorganic hybrid film.
4 . The method of manufacturing an electronic device of claim 3 ,
wherein said insulating film is a silicon nitride film, and
said insulating film of said silicon nitride film is etched with a fluorine-containing gas in the step (c).
5 . The method of manufacturing an electronic device of claim 1 ,
wherein said underlying layer is one of a surface portion of a silicon substrate, an electrode, an interconnect and an interlayer insulating film.
6 . A method of manufacturing an electronic device comprising the steps of:
(a) forming an insulating film on an underlying layer;
(b) forming a resist pattern on said insulating film;
(c) forming an insulating film pattern by etching said insulating film with said resist pattern used as a mask;
(d) cleaning said underlying layer after the step (c); and
(e) etching said underlying layer with at, least said insulating film pattern used as a mask.
7 . The method of manufacturing an electronic device of claim 6 ,
wherein water is used as a cleaning solution in the step (d).
8 . The method of manufacturing an electronic device of claim 6 ,
wherein a cleaning solution is kept at 50° C. or more in the step (d).
9 . The method of manufacturing an electronic device of claim 6 ,
wherein an aqueous solution of tetramethyl ammonium hydride is used as a cleaning solution in the step (d).
10 . The method of manufacturing an electronic device of claim 6 ,
wherein a diluted hydrofluoric acid aqueous solution is used as a cleaning solution in the step (d).
11 . The method of manufacturing an electronic device of claim 6 ,
wherein said insulating film is made from one of an oxide film, a nitride film, an oxinitride film, an organic film and an organic-inorganic hybrid film.
12 . The method of manufacturing an electronic device of claim 11 ,
wherein said insulating film is a silicon nitride film or a silicon oxinitride film, and
the method further comprises a step of exposing a substrate to the air between the step (c) and the step (d).
13 . The method of manufacturing an electronic device of claim 6 ,
wherein said underlying layer is made from one of a monosilicon layer, a silicon substrate, a polysilicon film, an amorphous silicon film, an organic film, an organic-inorganic hybrid film, a nitride film and an oxide film, and
said underlying layer is etched with a chlorine-containing gas or a bromine-containing gas in the step (e).
14 . The method of manufacturing an electronic device of claim 13 ,
wherein said insulating film is a silicon nitride film, and
said insulating film of said silicon nitride film is etched with a fluorine-containing gas in the step (c).
15 . The method of manufacturing an electronic device of claim 6 ,
wherein said underlying layer is one of a surface portion of a silicon substrate, an electrode, an interconnect and an interlayer insulating film.
16 . A method of manufacturing an electronic device comprising the steps of:
(a) forming an insulating film on an underlying layer;
(b) forming a resist pattern on said insulating film;
(c) forming an insulating film pattern by etching said insulating film with said resist pattern used as a mask;
(d) conducting a heat treatment on a substrate without removing said resist pattern after the step (c); and
(e) etching said underlying layer with said resist pattern and said insulating film pattern used as a mask.
17 . The method of manufacturing an electronic device of claim 16 ,
wherein said heat treatment is conducted under vacuum in the step (d).
18 . The method of manufacturing an electronic device of claim 16 ,
wherein said underlying layer is made from one of a monosilicon layer, a silicon substrate, a polysilicon film, an amorphous silicon film, an organic film, an organic-inorganic hybrid film, a nitride film and an oxide film, and
said underlying layer is etched with a chlorine-containing gas or a bromine-containing gas in the step (e).
19 . The method of manufacturing an electronic device of claim 16 ,
wherein said insulating film is made from one of an oxide film, a nitride film, an oxinitride film, an organic film, and an organic-inorganic hybrid film.
20 . The method of manufacturing an electronic device of claim 19 ,
wherein said insulating film is a silicon nitride film, and
said insulating film of said silicon nitride film is etched with a fluorine-containing gas in the step (c).
21 . The method of manufacturing an electronic device of claim 16 ,
wherein said underlying layer is one of a surface portion of a silicon substrate, an electrode, an interconnect and an interlayer insulating film.
22 . A method of manufacturing an electronic device comprising the steps of:
(a) forming an insulating film including nitrogen on an underlying layer;
(b) conducting a heat treatment on said insulating film for removing NH x , wherein x is an arbitral value;
(c) forming a resist pattern on said insulating film;
(d) forming an insulating film pattern by etching said insulating film with said resist pattern used as a mask; and
(e) etching said underlying layer with said resist pattern and said insulating film pattern used as a mask.
23 . A method of manufacturing an electronic device comprising the steps of:
(a) forming an insulating film on an underlying layer;
(b) forming a protecting film on said insulating film;
(c) forming a resist pattern on said protecting film;
(d) forming an insulating film pattern by etching said protecting film and said insulating film with said resist pattern used as a mask; and
(e) etching said underlying layer with said resist pattern and said insulating film pattern used as a mask.
24 . The method of manufacturing an electronic device of claim 23 ,
wherein said insulating film is made from one of an oxide film, a nitride film, an oxinitride film, an organic film and an organic-inorganic hybrid film.
25 . The method of manufacturing an electronic device of claim 24 ,
wherein said insulating film is a silicon nitride film, and
said protecting film is an oxide film formed by oxidizing a surface portion of said insulating film in the step (b).
26 . The method of manufacturing an electronic device of claim 23 ,
wherein said protecting film is made from at least one of a silicon oxide film and a silicon oxinitride film.
27 . The method of manufacturing an electronic device of claim 23 ,
wherein said underlying layer is made from one of a monosilicon layer, a silicon substrate, a polysilicon film, an amorphous silicon film, an organic film, an organic-inorganic hybrid film, a nitride film and an oxide film, and
said underlying layer is etched with a chlorine-containing gas or a bromine-containing gas in the step (e).
28 . The method of manufacturing an electronic device of claim 27 ,
wherein said underlying layer is a silicon nitride film, and
said insulating film is etched with a fluorine-containing gas in the step (d).
29 . The method of manufacturing an electronic device of claim 27 ,
wherein said underlying layer is one of a surface portion of a silicon substrate, an electrode, an interconnect and an interlayer insulating film.