Method and device for selective adjustment of hysteresis window
View Patent ↗The width and location of a hysteresis window of an interferometric modulator may be altered by adjusting various physical characteristics of the interferometric modulator. Thus, depending on the particular application for which the interferometric modulators are manufactured, the width and location of the hysteresis window may be altered. For example, in some applications, reducing the power required to operate an array of interferometric modulators may be an important consideration. In other applications, the speed of the interferometric modulators may be of more importance, where the speed of an interferometric modulator, as used herein, refers to the speed of actuating and relaxing the moveable mirror. In other applications, the cost and ease of manufacturing may be of most importance. Systems and methods are introduced that allow selection of a width and location of a hysteresis window by adjusting various physical characteristics.
1. A method of manufacturing an interferometric display element optimized for at least one of (a) low power consumption, (b) speed, and (c) ease of manufacturing, wherein the interferometric display element comprises a moveable reflective layer, a reflective element coupled to the moveable layer, a partially reflective layer, and a dielectric layer positioned between the moveable reflective layer and the partially reflective layer, the moveable reflective layer being suspended away from the partially reflective layer by one or more supports so as to define a cavity between the moveable reflective layer and the dielectric, the method comprising:
selecting one or more characteristics of at least one of a support thickness, a support width, a dielectric layer thickness, a moveable layer thickness, a moveable layer width, a moveable layer material, and a moveable layer stress level, wherein the selected one or more characteristics define one or more of an actuation threshold, a relax threshold, and a voltage difference between the actuation and relax thresholds of the interferometric display element; and
manufacturing the interferometric display element to include the selected one or more characteristic.
2. An interferometric modulator manufactured by the process of:
selecting one or more characteristics of at least one of a support thickness, a support width, a dielectric layer thickness, a moveable layer thickness, a moveable layer width, a moveable layer material, and a moveable layer stress level, wherein the selected one or more characteristics define one or more of an actuation threshold, a relax threshold, and a voltage difference between the actuation and relax thresholds of the interferometric modulator; and
manufacturing the interferometric modulator to include the selected one or more characteristics.
3. A method of defining characteristics for a hysteresis window of an interferometric display element, the method comprising:
selecting values for at least one of a thickness of a moveable layer portion of the display element, a thickness of a dielectric layer positioned between a moveable layer and a partially reflective layer, a spacing between supports configured to define a gap between the moveable layer and the partially reflective layer, and a gap distance between the moveable layer and the partially reflective layer, wherein a display element produced with said values exhibits said defined hysteresis window characteristics.
4. The method of claim 3 , wherein the hysteresis window is optimized for low power consumption and wherein an actuation threshold is about 3.5 volts to 4.5 volts and a relax threshold is about 1.5 volts to 2.5 volts.
5. The method of claim 3 , wherein the hysteresis window is optimized for speed and wherein an actuation threshold is about 7.5 volts to 8.5 volts and a relax threshold is about 5.5 volts to 6.5 volts.
6. The method of claim 3 , wherein the hysteresis windows is optimized for ease of manufacturing and wherein an actuation threshold is about 7 volts to 9 volts and a relax threshold is about 1 volt to 3 volts.
7. A method of manufacturing an interferometric modulator to incorporate selected characteristics, the method comprising:
selecting values representative of interferometric modulator component characteristics, wherein the characteristics define an expected relax threshold and an expected actuation threshold of the interferometric modulator; and
manufacturing the interferometric modulator by use of the selected values such that a relax threshold and an actuation threshold of the manufactured interferometric modulator are substantially equal to the expected relax and actuation thresholds, respectively.
8. The method of claim 7 , wherein the component characteristics include at least one of a thickness of a dielectric layer positioned between a moveable layer and a partially reflective layer, a spacing between supports configured to define a gap between the moveable layer and the partially reflective layer, and a gap distance between the moveable layer and the partially reflective layer.
9. An interferometric modulator manufactured by the method as recited in claim 7 .
10. A display element optimized for speed comprising:
a reflective moveable layer having a thickness in the range of about 2,500 to 5,000 Angstroms and a tensile stress in the range of about 350 to 700 MPascals;
a partially reflective layer;
a dielectric material positioned between the reflective moveable layer and the partially reflective layer; and
supports positioned between the reflective moveable layer and the dielectric material and configured to define a gap between the reflective moveable layer and the partially reflective layer.
11. The display element of claim 10 , wherein the reflective moveable layer comprises one of (a) a combination of Aluminum and Nickel alloy and (b) Aluminum.
12. The display element of claim 10 , wherein the display element has an actuation threshold in the range of about 7.5 volts to 8.5 volts and a relax threshold in the range of about 5.5 volts to 6.5 volts.
13. A low power display element comprising:
a reflective moveable layer having a thickness in the range of about 800 to 1,500 Angstroms and a tensile stress in the range of about 50 to 350 MPascals;
a partially reflective layer;
a dielectric material positioned between the reflective moveable layer and the partially reflective layer; and
supports positioned between the reflective moveable layer and the dielectric material and configured to define a gap between the reflective moveable layer and the partially reflective layer.
14. The display element of claim 13 , wherein a distance between the supports is greater than about 40 microns.
15. The display element of claim 13 , wherein the display element has an actuation threshold in the range of about 3.5 volts to 4.5 volts and a relax threshold in the range of about 1.5 volts to 2.5 volts.
16. A display element comprising:
a reflective moveable layer;
an optical stack comprising a partially reflective layer and an electrically conductive layer, wherein a center portion of the electrically conductive layer is electrically isolated from peripheral portions of the electrically conductive layer; and
a dielectric material positioned between the reflective moveable layer and the partially reflective layer; and
supports positioned between the reflective moveable layer and the dielectric material and configured to define a gap between the reflective moveable layer and the partially reflective layer.
17. The display element of claim 16 , wherein a length of the center portion is greater than a length of at least one of the peripheral portions.
18. The display element of claim 16 , wherein a thickness of the reflective moveable layer is in the range of about 800 to 1,500 Angstroms.
19. The display element of claim 16 , wherein a tensile stress of the reflective moveable layer is in the range of about 50 to 350 MPascals.
20. The display element of claim 16 , wherein the display element has an actuation threshold in the range of about 7 volts to 9 volts and a relax threshold in the range of about 1 volt to 3 volts.
21. An interferometric modulator comprising:
means for selecting values representative of interferometric modulator component characteristics, wherein the characteristics define an expected relax threshold and an expected actuation threshold of the interferometric modulator; and
means for manufacturing the interferometric modulator by use of the selected values such that a relax threshold and an actuation threshold of the manufactured interferometric modulator are substantially equal to the expected relax and actuation thresholds, respectively.
22. An apparatus comprising:
a display comprising
a reflective moveable layer having a thickness in the range of about 800 to 1,500 Angstroms and a tensile stress in the range of about 50 to 350 MPascals;
a partially reflective layer;
a dielectric material positioned between the reflective moveable layer and the partially reflective layer;
supports positioned between the reflective moveable layer and the dielectric material and configured to define a gap between the reflective moveable layer and the partially reflective layer;
a processor that is in electrical communication with said display, said processor being configured to process image data; and
a memory device in electrical communication with said processor.
23. The apparatus of claim 22 , further comprising:
a driver circuit configured to send at least one signal to said display.
24. The apparatus of claim 23 , further comprising:
a controller configured to send at least a portion of said image data to said driver circuit.
25. The apparatus of claim 22 , further comprising:
an image source module configured to send said image data to said processor.
26. The apparatus of claim 25 , wherein said image source module comprises at least one of a receiver, transceiver, and transmitter.
27. The apparatus of claim 26 , further comprising:
an input device configured to receive input data and to communicate said input data to said processor.