IP Library Granted Patent US 7,518,667
Granted Patent B2
US 7,518,667 · App. 11/193,323 · Granted Apr 14, 2009

Method for manufacturing a liquid crystal display device

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Quick Facts
Patent No.
US 7,518,667
App. No.
11/193,323
Granted
Apr 14, 2009
Kind
B2
Abstract

In a provided LCD device, a common electrode and a picture element electrode which make up the main portion of a unit picture element of the LCD device are both made up of one thin conductive layer made of a Cr layer, while a common electrode wiring line and a data line or a like which are connected to the common electrode and the picture element electrode respectively are each formed as a stacked film made up of a first conductive film (thick Cr layer) and a second conductive film (thin Cr layer). This configuration enables increasing the film thickness of wiring lines such as, especially, the common electrode wiring line and the data line or the like, thus decreasing a wiring line resistance thereof.

Claims (45)

1. A method of manufacturing a liquid crystal display device, said method comprising:

providing a first transparent insulation substrate;

forming a first conductive film on said first transparent insulation substrate;

patterning said first conductive film to form a plurality of lower-layer scanning lines, making up a lower portion of a scanning line serving as a gate electrode of a thin film transistor, and a plurality of lower-layer common electrode wiring lines, making up a lower portion of a common electrode wiring line;

forming a second conductive film on said first transparent insulation substrate;

patterning said second conductive film to form a plurality of upper-layer scanning lines, making up an upper portion of said scanning line, and a plurality of common electrodes electrically connected to said common electrode wiring line;

forming an inter-layer insulation film on said first transparent insulation substrate;

forming a plurality of regions of a semiconductor layer on said inter-layer insulation film;

forming a third conductive film on said semiconductor layer;

patterning said third conductive film to form a plurality of lower-layer data lines, making up a lower portion of a data line, a plurality of lower-layer drain electrodes, making up a lower portion of a drain electrode, and a plurality of lower-layer source electrodes, making up a lower portion of a source electrode;

forming a fourth conductive film on said first transparent insulation substrate;

patterning said fourth conductive film to form a plurality of upper-layer data lines, making up an upper portion of said data lines, a plurality of picture element electrodes, a plurality of upper-layer drain electrodes, making up an upper portion of said drain electrodes, and a plurality of upper-layer source electrodes, making up an upper portion of said source electrodes;

forming a protecting insulation film on said first transparent insulation substrate; and

performing rubbing processing to form a first oriented film on said protecting insulation film,

said picture element electrodes and said common electrodes thereby respectively comprising a thin single layer of conductive film in a pixel area whereas said scanning lines and said data lines respectively comprise a thicker double layer of conductive material in a periphery of said pixel area.

2. The method according to claim 1 , wherein said first and said second conductive films comprise a same conductive material.

3. The method according to claim 1 , wherein said first, second, third and fourth conductive films comprise a same conductive material.

4. The method according to claim 1 , wherein each of the conductive films is formed by sputtering a metal.

5. The method according to claim 1 , wherein each of the conductive films is formed by metal deposition.

6. The method according to claim 1 , further comprising:

providing a second transparent insulation substrate; and

forming black matrix layer regions on an inner face of said second transparent insulation substrate.

7. The method according to claim 6 , further comprising:

forming a flattening film on said inner face of said second transparent insulation substrate; and

forming a second oriented film on said inner face of said second transparent insulation substrate.

8. The method according to claim 7 , further comprising:

hermetically sealing liquid crystals between said first transparent insulation substrate and said inner face of said second transparent insulation substrate.

9. The method according to claim 8 , further comprising forming a first polarizing plate on an outer side of said first transparent insulation substrate, and forming a second polarizing plate on an outer side of said second transparent insulation substrate.

10. The method according to claim 1 , wherein forming said second conductive film comprises forming to a thickness of 50-100 nm.

11. The method according to claim 1 , further comprising forming a first oriented film via said inter-layer insulation film.

12. The method according to claim 11 , further comprising rubbing said first oriented film.

13. The method according to claim 12 , wherein said rubbing is conducted sufficiently to provide contrast that meets requirements for a monitor of medical-care equipment.

14. A method of manufacturing a thin film transistor layer of a liquid crystal display device, said method comprising:

providing a transparent insulation substrate;

forming a first conductive film on said transparent insulation substrate;

patterning said first conductive film to form a plurality of lower-layer scanning lines, making up a lower portion of a scanning line serving as a gate electrode of a thin film transistor, and a plurality of lower-layer common electrode wiring lines, making up a lower portion of a common electrode wiring line;

forming a second conductive film on said transparent insulation substrate; and

patterning said second conductive film to form a plurality of upper-layer scanning lines, making up an upper portion of said scanning line, and a plurality of common electrodes electrically connected to said common electrode wiring line,

said common electrodes thereby comprising a thin single layer of conductive film in a pixel area whereas said scanning lines comprise a thicker double layer of conductive material in a periphery of said pixel area.

15. The method according to claim 14 , wherein said first and said second conductive films comprise a same conductive material.

16. The method according to claim 14 , wherein forming said second conductive film comprises said second conductive film having a thickness less than a thickness of said first conductive film.

17. The method according to claim 14 , wherein patterning said second conductive film comprises said upper-layer scanning lines having a width about the same as or larger than a width of said lower-layer scanning lines.

18. The method according to claim 14 , further comprising forming an inter-layer insulation film on said transparent insulation substrate.

19. The method according to claim 18 , further comprising forming an oriented film via said inter-layer insulation film.

20. The method according to claim 19 , further comprising rubbing said oriented film sufficiently to provide contrast that meets requirements for a monitor of medical-care equipment.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 12, 2013
From: NEC CORPORATION
To: GOLD CHARM LIMITED
Reel/Frame 029976/0041 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2010
From: NEC LCD TECHNOLOGIES, LTD.
To: NEC CORPORATION
Reel/Frame 024492/0176 →