IP Library Granted Patent US 7,323,352
Granted Patent B2
US 7,323,352 · App. 11/196,271 · Granted Jan 29, 2008

Process for making light waveguide element

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,323,352
App. No.
11/196,271
Granted
Jan 29, 2008
Kind
B2
Abstract

A light waveguide element is made by forming only an upper clad layer ( 40 ) and a core layer ( 32 ) without etching an optical axis height-adjusting sections. By using plasma chemical vapor deposition (CVD) which is good at controlling the film thickness, it is possible to provide without difficulty a light waveguide element with a height-adjusting section that has a precise film thickness, making it possible to provide precise optical axis vertical alignment upon mounting. By forming alignment markers in the same photolithography as that of the core formation, it is possible to provide precise horizontal optical axis alignment.

Claims (10)

1. A process for making a light waveguide element mounted on a mount board along with an optical fiber and photoelectric components, comprises the steps of:

forming a core as a light path on a substrate serving as a lower clad layer; and

forming a T-shaped upper clad layer having a central section elevated from opposite-side optical axis height-adjusting sections to cover said core, said T-shaped clad layer-forming step comprises the steps of:

forming both said core and a first height-adjusting layer on said substrate;

patterning an etching stopper film on said first height-adjusting layer;

forming a first upper clad layer over an entire surface including said core and said etching stopper film;

forming an etching mask on said first clad layer to cover an area above said core;

etching off a portion of said first upper clad layer that is other than said area covered by said etching mask until said etching stopper film is exposed;

removing only said etching mask; and

forming a second upper clad layer over an entire surface including said etching stopper film, said first upper clad layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2023
From: NEOPHOTONICS SEMICONDUCTOR GK
To: NEOPHOTONICS CORPORATION
Reel/Frame 063148/0468 →