Semiconductor, electrooptic apparatus and electronic apparatus
View Patent ↗In a semiconductor device made by forming functional elements on a first substrate, transferring the element chip onto a second substrate, and connecting first pads on the element chip to second pads on the second substrate, the area or the width of the first is increased. The first pads can be securely connected to the second pads even when misalignment occurs during the separating and transferring processes. Only the first pads are formed on a surface of the element chip at the second-substrate-side. The functional elements are formed to be farther from the second substrate than the first pads. Alternatively, only the first pads are formed on a surface of the element chip remote from the second substrate, and the functional elements are formed to be closer to the second substrate than the first pads. Alternatively, the first pads are formed on both the surface of the element chip at the second-substrate-side and the surface of the element chip remote from the second substrate.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first member including a first base material and an element chip on which a plurality of first pads are formed;
forming a second member including a wire and a second base material;
forming a third member including the element chip and the wire, and the forming of the third member including peeling the element chip from the first member; and
forming a fourth member including the first member and the second member prior to the forming of the third member,
the peeling the element chip from the first base material being carried out after the forming of the fourth member, and disposing an electro-optical layer sandwiched between a first electrode and a second electrode, the first electrode being coupled to at least one element chip through at least one of the pluralities of the first pads.
2. The method according to claim 1 , in the forming of the third member, the plurality of first pads contacting the second member.
3. The method according to claim 1 , in the forming of the third member, the first pads being disposed between the element chip and the first member.
4. The method according to claim 1 , in the forming of the third member, at least one of the plurality of first pads contacting the second member and at least one of the first pads being disposed between the element chip and the first member.
5. The method according to claim 1 , the peeling the element chip from the first member using energy irradiation.
6. The method according to claim 1 , in the forming of the second member, forming a plurality of second pads that are coupled to the wire on the second base material.
7. A method of manufacturing an electro-optical device, the method comprising:
preparing the semiconductor device according to claim 1 ; and
forming an electro-optical element driven by the semiconductor device.
8. A method of manufacturing a semiconductor device, the method comprising:
forming a first member including a first base material and a plurality of element chips on each of which a plurality of first pads are disposed;
forming a second member including a wire and a second base material; and
forming a third member including at least one of the plurality of first pads and the wire, the forming of the third member including peeling at least one of the plurality of element chips from the first member, and disposing an electro-optical layer sandwiched between a first electrode and a second electrode, the first electrode being coupled to the at least one element chip through at least one of the plurality of first pads.
9. A method of manufacturing electro-optical device, the method comprising:
forming a first member including a first base material and an element chip on which a plurality of first pads are formed;
forming a second member including a wire and a second base material; and
forming a third member including the element chip, the wire and an electro-optical element, the forming of the third member including peeling the element chip from the first member, and disposing an electro-optical layer sandwiched between a first electrode and a second electrode, the first electrode being coupled to the at least one element chip through at least one of the plurality of first pads.
10. The method according to claim 9 , in the forming of the third member, the plurality of first pads contacting the second member.
11. The method according to claim 9 , in the forming of the third member, the first pads being disposed between the element chip and the first member.
12. The method according to claim 9 , in the forming of the third member, at least one of the plurality of first pads contacting the second member and at least one of the first pads being disposed between the element chip and the first member.
13. The method according to claim 9 , the peeling of the element chip from the first member uses a method of energy irradiation.
14. The method according to claim 9 , in the peeling, the first base material from the first member, the first member including a plurality of element chips, and
peeling at least one of the plurality of element chips from the first member.
15. The method according to claim 9 , further comprising forming a fourth member including the first member and the second member prior to the forming of the third member.
16. The method according to claim 15 , the peeling of the element chip from the first base material being carried out after the forming of the fourth member.