Semiconductor integrated circuit device
View Patent ↗A semiconductor integrated circuit device has a first MOS transistor having an insulating film, a first source, a first gate electrode, and a nitride film overlapping the first gate electrode from the first source through the insulating film. A second MOS transistor has a second source and a second gate electrode but does not have a nitride film overlapping the second gate electrode from the second source.
1. A semiconductor integrated circuit device, comprising:
a first MOS transistor having an insulating film, a first source, a first non-floating gate electrode, and a nitride film overlapping the first non-floating gate electrode from the first source through the insulating film for controlling a threshold voltage of the first MOS transistor by inhibiting hydrogen diffusion in an overlap region of the first non-floating gate electrode and the first source; and
a second MOS transistor having a second source and a second non-floating gate electrode and without a nitride film overlapping the second non-floating gate electrode from the second source.
2. A semiconductor integrated circuit device according to claim 1 ; wherein a ratio of an amount in which the nitride film overlaps the first non-floating gate electrode to a channel width of the first MOS transistor has a value between 0 and 1.
3. A semiconductor integrated circuit device according to claim 1 ; wherein an overlap amount of the nitride film with respect to the first non-floating gate electrode is equal to or greater than 0.2 μm.
4. A semiconductor integrated circuit device according to claim 1 ; wherein an overlap amount of the nitride film with respect to the first source is equal to or greater than 0.2 μm.
5. A semiconductor integrated circuit device according to claim 1 ; wherein the nitride film has a thickness equal to or greater than 50 nm.
6. A semiconductor integrated circuit device comprising: a first MOS transistor having a first source, a first non-floating gate electrode, and a nitride film overlapping the first source and the first non-floating gate electrode for controlling a threshold voltage of the first MOS transistor by inhibiting hydrogen diffusion in an overlap region of the first non-floating gate electrode and the first source; and a second MOS transistor having a second source and a second non-floating gate electrode.
7. A semiconductor integrated circuit device according to claim 6 ; wherein a ratio of an amount in which the nitride film overlaps the first non-floating gate electrode to a channel width of the first MOS transistor has a value between 0 and 1.
8. A semiconductor integrated circuit device according to claim 6 ; wherein an overlap amount of the nitride film with respect to the first non-floating gate electrode is equal to or greater than 0.2 μm.
9. A semiconductor integrated circuit device according to claim 6 ; wherein an overlap amount of the nitride film with respect to the first source is equal to or greater than 0.2 μm.
10. A semiconductor integrated circuit device according to claim 6 ; wherein the nitride film has a thickness equal to or greater than 50 nm.
11. A semiconductor integrated circuit device according to claim 6 ; wherein the second MOS transistor does not have a nitride film overlapping the second source and the second non-floating gate electrode.
12. A semiconductor integrated circuit device according to claim 11 ; wherein a ratio of an amount in which the nitride film overlaps the first non-floating gate electrode to a channel width of the first MOS transistor has a value between 0 and 1.
13. A semiconductor integrated circuit device according to claim 11 ; wherein an overlap amount of the nitride film with respect to the first non-floating gate electrode is equal to or greater than 0.2 μm.
14. A semiconductor integrated circuit device according to claim 11 ; wherein an overlap amount of the nitride film with respect to the first source is equal to or greater than 0.2 μm.
15. A semiconductor integrated circuit device according to claim 11 ; wherein the nitride film has a thickness equal to or greater than 50 nm.
16. A semiconductor integrated circuit device comprising: a first MOS transistor having a first source, a first non-floating gate electrode, and a plurality of nitride films overlapping the first source and the first non-floating gate electrode for controlling a threshold voltage of the first MOS transistor by inhibiting hydrogen diffusion in an overlap region of the first non-floating gate electrode and the first source; and a second MOS transistor having a second source and a second non-floating gate electrode.
17. A semiconductor integrated circuit device according to claim 16 ; wherein the second MOS transistor does not have a nitride film overlapping the second source and the second non-floating gate electrode.
18. A semiconductor integrated circuit device according to claim 17 ; wherein the nitride films are separate and independent from one another.
19. A semiconductor integrated circuit device according to claim 17 ; wherein the nitride films extend in a length direction of the first non-floating gate electrode.
20. A semiconductor integrated circuit device according to claim 17 ; wherein each of the nitride films has a thickness equal to or greater than 50 nm.