Magnetoresistive sensor having an anisotropic hard bias without a buffer layer
View Patent ↗A magnetoresistive sensor having magnetically anisotropic bias layers for biasing the free layer of the sensor. The hard magnetic layer is formed over a seed layer structure that has been treated to induce the magnetic anisotropy in the hard bias layers. The treated seed layers also allow the hard bias layers to be deposited over a crystalline material such as in a partial mill design, without the need for a buffer layer such as Si to break the epitaxial growth initiated by the underlying crystalline layer.
1. A magnetoresistive sensor, comprising:
an underlayer;
a seed layer having a surface configured with an anisotropic roughness, the seed layer being a crystalline material; and
a hard magnetic material formed over the seed layer wherein the underlayer is an antiferromagnetic material.
2. A magnetoresistive sensor, comprising:
an underlayer;
a seed layer having a surface configured with an anisotropic roughness, the seed layer being a crystalline material; and
a hard magnetic material formed over the seed layer wherein the anisotropic roughness comprises ripples that extend along a direction substantially perpendicular to an air bearing surface of the sensor.
3. A magnetoresistive sensor as in claim 2 wherein the underlayer is an amorphous, electrically insulating, non-magnetic gap layer.
4. A magnetoresistive sensor as in claim 2 wherein the anisotropic roughness induces a magnetic anisotropy in the hard magnetic material.
5. A magnetoresistive sensor comprising:
an underlayer;
a first seed layer formed on the under-layer, the first seed layer having an anisotropic roughness;
a second seed layer formed on the first seed layer; and
a layer of hard magnetic material formed over the second seed layer;
wherein the first and second seed layers each comprise CrMo.
6. A magnetoresistive sensor as in claim 5 wherein the anisotropic roughness is configured to induce a magnetic anisotropy in the layer of hard magnetic material.
7. A magnetoresistive sensor as in claim 5 wherein the first and second seed layers each comprise CrMo and the hard magnetic material comprises CoPtCr.
8. A magnetoresistive sensor as in claim 5 wherein the first and second seed layers each comprise CrMo and the hard magnetic material comprises CoPt.
9. A magnetoresistive sensor, comprising:
a sensor stack having first and second laterally opposed sides; and
first and second hard bias structures extending from the first and second sides of the sensor stack, each hard bias structure comprising a seed layer having a surface configured with an anistotropic roughness, and a hard magnetic material layer formed over the seed layer wherein the anisotropic roughness comprises ripples having an average depth of 0.2-5 nm.
10. A magnetoresistive sensor, comprising:
a sensor stack having first and second laterally opposed sides; and
first and second hard bias structures extending from the first and second sides of the sensor stack, each hard bias structure comprising a first seed layer having a surface configured with an anistotropic roughness, a second seed layer formed over the first seed layer, and a hard magnetic material layer formed over the second seed layer, wherein the first and second seed layers each comprise CrMo.
11. A sensor as in claim 9 wherein the seed layer comprises CrMo.