IP Library Granted Patent US 7,635,858
Granted Patent B2
US 7,635,858 · App. 11/200,956 · Granted Dec 22, 2009

Organic light-emitting device with improved layer conductivity distribution

Assignee: AU Optronics Corporation
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Quick Facts
Patent No.
US 7,635,858
App. No.
11/200,956
Granted
Dec 22, 2009
Kind
B2
Abstract

An OLED comprises an anode, a hole source, an emissive region, an electron source and a cathode, wherein the materials for the electron source and the hole source are chosen such that the electrical conductivity of these charge carrier sources is greater than the electrical conductivity of the emissive region. In particular, the electrical conductivity of the source layers is between 10 −8 to 10 2 S/cm. Furthermore, one or both of the hole source and the electron source are made substantially of one or more inorganic materials. The emissive region can have one or more layers of organic material. The materials for the emissive region are insulators. The cathode can be made of a metal such as Mg:Ag and Al, and the anode is made of ITO or the like. The electrical conductivity of the cathode and the anode is significantly higher than 10 2 S/cm.

Claims (43)

1. An organic light-emitting device comprising:

a cathode;

an anode; and

a layer structure disposed between the cathode and the anode; the layer structure comprising:

a hole source region disposed adjacent to the anode;

an electron source region disposed adjacent to the cathode; and

an emissive region disposed between the hole source region and the electron source region, such that the emissive region is immediately adjacent to the hole source region and immediately adjacent to the electron source region, the emissive region made of at least one organic host material doped with one or more luminescent dopants, each of the hole source region, the electron source region and the emissive region having an electrical conductivity, wherein

the electrical conductivity of the hole source region is between 10 −8 to 10 2 S/cm;

the electrical conductivity of the electron source region is between 10 −8 to 10 2 S/cm;

the electrical conductivity of the emissive region is lower than 10 −8 S/cm; and

the electrical conductivity of the cathode and the anode is higher than 10 2 S/cm, and wherein at least one of the hole source and the electron source regions comprises a layer made of an inorganic material, such that the electrical conductivity of the emissive region is lower than the electrical conductivity of the immediately adjacent electron source region and the immediately adjacent hole source region, wherein the electron source region comprises a layer of LiMn 2 O 4 and a layer of BPhen:Li.

2. The device of claim 1 , wherein the hole source region contains a P-type semi-metal, the electron source region contains an N-type semi-metal, and the emissive region contains an electrical insulator.

3. The device of claim 1 , wherein the hole source region comprises a layer of ion-intercalated inorganic material and the electron source region comprises a layer of ion-doped organic material.

4. The device of claim 1 , wherein the hole source region comprises a layer of ion-intercalated inorganic material and the electron source region comprises a layer of ion-intercalated inorganic material.

5. The device of claim 1 , wherein the hole source region comprises a layer of ion-doped organic material and the electron source region comprises a layer of ion-intercalated inorganic material.

6. The device of claim 1 , wherein the emissive region comprises an emissive layer and a P-buffer layer disposed between the emissive layer and the hole source region.

7. The device of claim 1 , wherein the emissive region comprises an emissive layer and an N-buffer layer disposed between the emissive layer and the electron source region.

8. The device of claim 1 , wherein the hole source region comprises one or more layers containing TCNQ.

9. The device of claim 1 , further comprising an electron injection layer disposed between the cathode and the electron source region.

10. The device of claim 9 , wherein the electron injection layer comprises a layer of LiF.

11. An organic light-emitting device comprising:

a cathode;

an anode; and

a layer structure disposed between the cathode and the anode; the layer structure comprising:

a hole source region disposed adjacent to the anode;

an electron source region disposed adjacent to the cathode; and

an emissive region disposed between the hole source region and the electron source region, such that the emissive region is immediately adjacent to the hole source region and immediately adjacent to the electron source region, the emissive region made of at least one organic host material doped with one or more luminescent dopants, each of the hole source region, the electron source region and the emissive region having an electrical conductivity, wherein

the electrical conductivity of the hole source region is between 10 −8 to 10 2 S/cm;

the electrical conductivity of the electron source region is between 10 −8 to 10 2 S/cm;

the electrical conductivity of the emissive region is lower than 10 −8 S/cm; and

the electrical conductivity of the cathode and the anode is higher than 10 2 S/cm, and wherein at least one of the hole source and the electron source regions comprises a layer made of an inorganic material, such that the electrical conductivity of the emissive region is lower than the electrical conductivity of the immediately adjacent electron source region and the immediately adjacent hole source region, wherein the hole source region comprises a layer of NPB:F 4 -TCNQ and a layer of F 4 -TCNQ:WO 3 .

12. The device of claim 1 , wherein the electron source region comprises one or more layers containing alkali or alkaline earth metal.

13. An organic light-emitting device comprising:

a cathode;

an anode; and

a layer structure disposed between the cathode and the anode; the layer structure comprising:

a hole source region disposed adjacent to the anode;

an electron source region disposed adjacent to the cathode; and

an emissive region disposed between the hole source region and the electron source region, such that the emissive region is immediately adjacent to the hole source region and immediately adjacent to the electron source region, the emissive region made of at least one organic host material doped with one or more luminescent dopants, each of the hole source region, the electron source region and the emissive region having an electrical conductivity, wherein

the electrical conductivity of the hole source region is between 10 −8 to 10 2 S/cm;

the electrical conductivity of the electron source region is between 10 −8 to 10 2 S/cm;

the electrical conductivity of the emissive region is lower than 10 −8 S/cm; and

the electrical conductivity of the cathode and the anode is higher than 10 2 S/cm, and wherein at least one of the hole source and the electron source regions comprises a layer made of an inorganic material, such that the electrical conductivity of the emissive region is lower than the electrical conductivity of the immediately adjacent electron source region and the immediately adjacent hole source region, wherein the hole source region comprises one or more layers containing TCNQ, and wherein the hole source region comprises a layer of F 4 -TCNQ:WO 3 .

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2023
From: AUO CORPORATION
To: OPTRONIC SCIENCES LLC
Reel/Frame 064658/0572 →
CHANGE OF NAME Recorded May 25, 2023
From: AU OPTRONICS CORPORATION
To: AUO CORPORATION
Reel/Frame 063785/0830 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 10, 2005
From: LIU, TSWEN-HSIN
To: AU OPTRONICS CORPORATION
Reel/Frame 016878/0681 →
Continuity (1)
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