Rectangular conductor for solar battery, method for fabricating same and lead wire for solar battery

1. A rectangular conductor, comprising:

a conductor having a volume resistivity equal to or less than 50 μΩ·mm, and a 0.2% yield strength value equal to or less than 80 MPa in a tensile test;

wherein the conductor comprises Cu,

wherein the conductor is configured to be bonded by soldering to a contact region of a silicon crystal wafer of a solar battery, and

wherein a warping force generated by a thermal contraction of the conductor after solder bonding to the silicon crystal wafer is reduced such that a warping is equal to or less than 3.2 mm.

2. A method for fabricating a rectangular conductor, comprising the steps of:

rolling a conductor having a volume resistivity equal to or less than 50μΩ·mm to have a rectangular cross section; and

conducting a heat treatment for the rectangular conductor to have a 0.2% yield strength value equal to or less than 80 MPa in a tensile test;

wherein the conductor comprises Cu,

wherein the rectangular conductor is configured to be bonded by soldering to a contact region of a silicon crystal wafer of a solar battery, and

wherein a warping force generated by a thermal contraction of the rectangular conductor after solder bonding to the silicon crystal wafer is reduced such that a warping is equal to or less than 3.2 mm.

3. The method for fabricating a rectangular conductor, according to claim 2 , wherein:

the step of conducting the heat treatment is conducted by flowing a current through the conductor.

4. The method for fabricating a rectangular conductor, according to claim 2 , wherein:

the step of conducting the heat treatment is conducted by heating the conductor using a heater.

5. A lead wire, comprising:

a rectangular conductor having a volume resistivity equal to or less than 50 μΩ·mm, and a 0.2% yield strength value equal to or less than 80 MPa in a tensile test; and

a solder plating film provided on at least a region of a surface of the rectangular conductor;

wherein the conductor comprises Cu,

wherein the lead wire is configured to be bonded by soldering to a contact region of a silicon crystal wafer of a solar battery, and

wherein a warping force generated by a thermal contraction of the lead wire after solder bonding to the silicon crystal wafer is reduced such that a warping is equal to or less than 3.2 mm.

6. The lead wire, according to claim 5 , wherein:

the solder plating film is composed of Sn—Ag—Cu based Pb free solder.

7. The rectangular conductor, according to claim 1 , wherein the conductor is in a heat treated condition.

8. The lead wire, according to claim 5 , wherein the conductor is in a heat treated condition.

9. An arrangement comprising:

a conductor having a volume resistivity equal to or less than 50μΩ·mm, and a 0.2% yield strength value equal to or less than 80 MPa in a tensile test;

wherein the conductor comprises Cu,

wherein the conductor is bonded to a contact region of a silicon crystal wafer of a solar battery, and

wherein a warping force generated by a thermal contraction of the conductor after bonding to the silicon crystal wafer is reduced such that a warping is equal to or less than 3.2 mm.

10. The rectangular conductor, according to claim 1 , wherein the volume resistivity is equal to or less than 50μΩ·mm, and the 0.2% yield strength value is equal to or less than 50 MPa in the tensile test.

11. The rectangular conductor, according to claim 1 , wherein the conductor consists of Cu.