Phosphor-converted LED devices having improved light distribution uniformity

1. A New Phosphor-Converted LED Device (“NPCLD”), comprising:

a concave base housing;

a light emitting diode (“LED”) in the concave base housing, the LED having a p-doped semiconductor body and an n-doped semiconductor body;

a phosphor body over the LED, the phosphor body having a substantially flat upper surface;

a first lens over the LED, the first lens having a substantially flat upper surface; and

a second lens over the phosphor body and over the first lens, the second lens having a substantially convex upper surface; and

the first lens and the phosphor body together having a substantially flat interface.

2. The NPCLD of claim 1 , wherein the phosphor body is interposed between the LED and the first lens.

3. The NPCLD of claim 1 , wherein the phosphor body includes

a phosphor and

an encapsulant,

wherein the phosphor substantially covers the LED.

4. The NPCLD of claim 1 , wherein the first lens is interposed between the LED and the phosphor body.

5. The NPCLD of claim 1 , wherein:

the LED has an emission maximum within a range of about 420 nanometers to about 490 nanometers, the n-doped semiconductor body and the p-doped semiconductor body each including a member selected from the group consisting of gallium nitride, indium-gallium-nitride, gallium-aluminum-indium-nitride, and mixtures; and

the phosphor has an emission maximum within a range of about 550 nanometers to about 585 nanometers, the phosphor including a cerium-doped yttrium-aluminum garnet, including

at least one element selected from the group consisting of yttrium, lutetium, selenium, lanthanum, gadolinium, samarium, and terbium; and

at least one element selected from the group consisting of aluminum, gallium, and indium.

6. The NPCLD of claim 1 , further including:

a first terminal at a relatively high electrical potential in signal communication with the p-doped semiconductor body; and

a second terminal at a relatively low electrical potential in signal communication with the n-doped semiconductor body.

7. A method for fabricating a New Phosphor-Converted LED Device (“NPCLD”), the method comprising:

producing a concave base housing;

placing a light emitting diode (“LED”) in the concave base housing, the LED having a p-doped semiconductor body and an n-doped semiconductor body;

forming a phosphor body over the LED;

forming a first lens over the LED, the first lens having a substantially flat upper surface; and

forming a second lens over the phosphor body and over the first lens, the second lens having a substantially convex upper surface; and

shaping the first lens and the phosphor body to have a substantially flat interface.

8. The method of claim 7 , further including interposing the phosphor body between the LED and the first lens.

9. The method of claim 7 , further including substantially covering the LED with phosphor.

10. The method of claim 7 , further including interposing the first lens between the LED and the phosphor body.

11. The method of claim 10 , further including shaping the phosphor body to have a substantially convex upper surface.

12. The method of claim 7 , wherein:

the LED has an emission maximum within a range of about 420 nanometers to about 490 nanometers, the n-doped semiconductor body and the p-doped semiconductor body each including a member selected from the group consisting of gallium nitride, indium-gallium-nitride, gallium-aluminum-indium-nitride, and mixtures; and

the phosphor has an emission maximum within a range of about 550 nanometers to about 585 nanometers, the phosphor including a cerium-doped yttrium-aluminum garnet, further including

at least one element selected from the group consisting of yttrium, lutetium, selenium, lanthanum, gadolinium, samarium and terbium, and

at least one element selected from the group consisting of aluminum, gallium and indium.