RF power amplifier
View Patent ↗A bias current to be supplied to an amplification circuit 60 is drawn out of a collector of a transistor Q 11 of a bias circuit 10 . The drawn-out bias current is input to a base of a transistor Q 13 via an attenuation filter F 2 and is output from an emitter of the transistor Q 13 in the state where the voltage thereof is reduced by a level corresponding to Vbe. The attenuation filter F 2 is conducted in a DC manner, and attenuates a component of a frequency fH(=2ft−fr) defined by a transmission frequency ft and a receiving frequency fr of a radio frequency signal. The bias current output from the emitter of the transistor Q 13 is supplied to the amplification circuit 60 via an attenuation filter F 1 . The attenuation filter F 1 is conducted in a DC manner, and attenuates a component of a frequency fL(=|fr−ft|).
1. An RF power amplifier usable for an apparatus for transmitting and receiving a radio frequency signal, the RF power amplifier comprising:
an amplification circuit including at least one transistor for receiving a radio frequency signal having a transmission frequency ft at a base thereof and amplifying and outputting the radio frequency signal from a collector thereof; and
a bias circuit for supplying a bias current to the base of the transistor included in the amplification circuit as an output from an emitter follower;
wherein the bias circuit includes a filter for attenuating at least either one of a component of a difference frequency fL (=|fr−ft|) between a receiving frequency fr and the transmission frequency ft of the radio frequency signal, and a component of a frequency fH (=2ft−fr) which is lower than the transmission frequency ft by the difference frequency fL.
2. An RF power amplifier according to claim 1 , wherein the bias circuit comprises:
a first transistor having an emitter which is grounded;
a second transistor having a collector connected to a power supply and an emitter connected to a base of the first transistor;
a first resistor for connecting a base of the second transistor to the power supply;
a second resistor for connecting a collector of the first transistor and the base of the second transistor to each other;
a third resistor for grounding the emitter of the second transistor;
a third transistor having a collector connected to the power supply;
a fourth resistor for grounding an emitter of the third transistor;
a first attenuator provided between the emitter of the third transistor and the amplification circuit; and
a second attenuator provided between the collector of the first transistor and a base of the third transistor.
3. An RF power amplifier according to claim 1 , wherein the bias circuit comprises:
a first transistor having an emitter which is grounded;
a second transistor having a collector connected to a power supply and an emitter connected to a base of the first transistor;
a first resistor for connecting a base of the second transistor to the power supply;
a second resistor for connecting a collector of the first transistor and the base of the second transistor to each other;
a third resistor for grounding the emitter of the second transistor;
a third transistor having a collector connected to the power supply and a base connected to the collector of the first transistor;
a fourth resistor for grounding an emitter of the third transistor;
an attenuator provided between the emitter of the third transistor and the amplification circuit.
4. An RF power amplifier according to claim 1 , wherein the bias circuit comprises:
a first transistor having an emitter which is grounded;
a second transistor having a collector connected to a power supply and an emitter connected to a base of the first transistor;
a first resistor having one end connected to a base of the second transistor;
a second resistor for connecting a collector of the first transistor and the base of the second transistor to each other;
a third resistor for grounding the emitter of the second transistor;
a third transistor having a collector connected to the power supply and a base connected to the collector of the first transistor;
a fourth resistor for grounding an emitter of the third transistor;
a first attenuator provided between the emitter of the third transistor and the amplification circuit; and
a second attenuator provided between the other end of the first resistor and the power supply.
5. An RF power amplifier according to claim 1 , wherein the bias circuit comprises:
a first transistor having an emitter which is grounded;
a second transistor having a collector connected to a power supply and an emitter connected to a base of the first transistor;
a first resistor having one end connected to the power supply;
a second resistor for connecting a collector of the first transistor and a base of the second transistor to each other;
a third resistor for grounding the emitter of the second transistor;
a third transistor having a collector connected to the power supply and a base connected to the collector of the first transistor;
a fourth resistor for grounding an emitter of the third transistor;
a first attenuator provided between the emitter of the third transistor and the amplification circuit; and
a second attenuator provided between the other end of the first resistor and the base of the second transistor.
6. An RF power amplifier according to claim 1 , wherein the bias circuit comprises:
a first transistor having an emitter which is grounded;
a second transistor having a collector connected to a power supply;
a first resistor for connecting a base of the second transistor to the power supply;
a second resistor for connecting a collector of the first transistor and the base of the second transistor to each other;
a third resistor for grounding an emitter of the second transistor;
a third transistor having a collector connected to the power supply and a base connected to the collector of the first transistor;
a fourth resistor for grounding an emitter of the third transistor;
a first attenuator provided between the emitter of the third transistor and the amplification circuit; and
a second attenuator provided between a base of the first transistor and the emitter of the second transistor.