Laser ablation method for fabricating high performance organic devices
View Patent ↗A laser ablation method is utilized to define the channel length of an organic transistor. A substrate is coated with a deposition of a metal or conductive polymer deposition, applied in a thin layer in order to enhance the resolution that can be attained by laser ablation. The laser ablation method can be used in a roll-to-roll process, and achieves speeds, volumes, prices and resolutions that are adequate to produce printed electronic technologies.
1. A method of forming an organic transistor comprising using laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length, and to simultaneously pattern a plurality of transistors and a printed antenna in an RFID circuit.
2. A method of forming an organic transistor comprising using laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length, and to simultaneously pattern a plurality of transistors in an RFID circuit.
3. The method of claim 2 wherein the ablation resolution is between 2 μm and 4 μm.
4. The method of claim 2 , further comprising forming a top gate organic transistor structure.
5. The method of claim 2 , further comprising forming a bottom gate, top contact organic transistor structure.
6. The method of claim 2 , further comprising forming a bottom gate, bottom contact organic transistor structure.
7. A method of forming an organic transistor comprising using laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length, and to simultaneously pattern a plurality of transistors and printed antennas in a plurality of RFID circuits.
8. The method of claim 7 wherein the ablation resolution is between 2 μm and 4 μm.
9. The method of claim 7 , further comprising forming a top gate organic transistor structure.
10. The method of claim 7 , further comprising forming a bottom gate, top contact organic transistor structure.
11. The method of claim 7 , further comprising forming a bottom gate, bottom contact organic transistor structure.
12. A method of forming an organic transistor comprising using laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length, and to simultaneously pattern a plurality of transistors in a plurality of RFID circuits.
13. The method of claim 12 wherein the ablation resolution is between 2 μm and 4 μm.
14. The method of claim 12 , further comprising forming a top gate organic transistor structure.
15. The method of claim 12 , further comprising forming a bottom gate, top contact organic transistor structure.
16. The method of claim 12 , further comprising forming a bottom gate, bottom contact organic transistor structure.
17. A method of forming an organic transistor comprising using multiple exposures of laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length.
18. A method of forming an organic transistor comprising:
using laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length; and
depositing a single column of metal rectangles where an RFID circuit is to be formed, and sequentially ablating each metal rectangle.
19. A method of forming an organic transistor comprising:
using laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length;
depositing a plurality of columns of metal rectangles where a plurality of RFID circuits are to be formed;
simultaneously ablating a row of metal rectangles; and
simultaneously ablating sequential rows of metal rectangles.
20. A method of forming an organic transistor comprising:
using laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length; and
using multiple laser heads to simultaneously expose a plurality of RFID circuits.
21. A method of forming an organic transistor comprising:
using laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length; and
using a single laser head to expose a single RFID circuit.
22. A method of forming an organic transistor comprising:
using laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length; and
forming a stopping layer below the metal layer.
23. The method of claim 22 wherein forming a stopping layer comprises forming a self-assembled monolayer (SAM).
24. A method of forming an organic transistor comprising:
using laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length; and
treating a top surface of an additional layer below the metal layer to make the additional layer more resistant to laser light.
25. A method of forming an organic transistor comprising
using laser ablation to define a metal layer in an organic transistor to form a source and a drain of the organic transistor, and a gap there between defining the channel length; and
utilizing laser ablation for cuts into a dielectric layer of the organic transistor to form contacts.