Organic material photodiode
View Patent ↗The present invention relates to a photodiode including a photo-active layer, which layer includes at least one electron donating material, and at least one fullerene derivative as an electron accepting material. The present invention further relates to a method for making such a photodiode, to a photo-active layer and to a fullerene derivative.
1. A photodiode, comprising a photo-active layer which layer comprises a mixture of at least one electron donating material and an isomeric mixture of a fullerene derivative comprising a carbon cluster of at least 70 atoms and at least one addend bound to the carbon cluster, which addend is selected such that the fullerene derivative is compatible with the electron donating material, wherein the degree of derivatisation of the fullerenes is 1 to 3 fullerene-addend bonds per fullerene.
2. A photodiode, comprising a photo-active layer which layer comprises a mixture of at least one electron donating material and an isomeric mixture of a fullerene derivative comprising a carbon cluster of at least 70 atoms and at least one addend bound to the carbon cluster, which addend is selected such that the fullerene derivative is compatible with the electron donating material, wherein the electron donating material is selected from the group consisting of conjugated polymers, conjugated oligomers, conjugated molecules that are free of repeating units, quantum dots, quantum wells and inorganic semi-conductive nanoparticles.
3. The photodiode according to claim 2 , wherein the conjugated polymer is selected from the group consisting of polymers of thiophenes, phenylenes, fluorenes, acetylenes, isothionaphtenes, benzthiaziazoles, pyrroles and combinations thereof.
4. The photodiode according to claim 2 , wherein the conjugated oligomer is selected from the group consisting of oligomers of thiophenes, phenylenes, fluorenes, acetylenes, isothionaphtenes, benzthiaziazoles, pyrroles and combinations thereof.
5. A photodiode, comprising a photo-active layer which layer comprises a mixture of at least one electron donating material and an isomeric mixture of a fullerene derivative comprising a carbon cluster of at least 70 atoms and at least one addend bound to the carbon cluster, which addend is selected such that the fullerene derivative is compatible with the electron donating material, wherein the weight to weight ratio of fullerene to p-type material in the photo-active layer is in the range of 10:1 to 1:10.
6. A solar panel, comprising a photodiode comprising a photo-active layer which layer comprises a mixture of at least one electron donating material and an isomeric mixture of a fullerene derivative comprising a carbon cluster of at least 70 atoms and at least one addend bound to the carbon cluster, which addend is selected such that the fullerene derivative is compatible with the electron donating material, wherein the electron donating material is selected from the group consisting of conjugated polymers, conjugated oligomers, conjugated molecules that are free of repeating units, quantum dots, quantum wells and inorganic semi-conductive nanoparticles.
7. A photo detector or light intensity meter, comprising a photodiode, comprising a photo-active layer which layer comprises a mixture of at least one electron donating material and an isomeric mixture of a fullerene derivative comprising a carbon cluster of at least 70 atoms and at least one addend bound to the carbon cluster, which addend is selected such that the fullerene derivative is compatible with the electron donating material.
8. A photodiode, comprising a photo-active layer which layer comprises a mixture of at least one electron donating material and an isomeric mixture of a fullerene derivative comprising a carbon cluster of at least 70 atoms and at least one addend bound to the carbon cluster, which addend is selected such that the fullerene derivative is compatible with the electron donating material, wherein the fullerene derivative is a methanofullerene.