Chemical amplification resist composition and pattern-forming method using the same

1. A chemical amplification resist composition comprising: (A) a resin increasing the solubility in an alkali developer by the action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation; (C) a compound having a fluorine atom and a hydroxyl group, and a pKa value of from 4 to 15; and (D) a solvent, wherein compound (C) includes (Ca) a compound represented by the following formula (FAD-I) or (FAD-III):

wherein R a101 , R a102 , R a103 and R a104 each represents a hydrogen atom, an alkyl group, an alicylic alkyl group, an alkoxyl group, an acyl group or an acyloxy group;

A a101 represents a perfluoroalkylene group or a perfluorocycloalkylene group;

A a102 represents a single bond or a divalent organic group; and

R a106 represents a fluorine atom or a perfluoroalkyl group, in which a plurality of R a106 each may be the same or different.

2. The chemical amplification resist composition as claimed in claim 1 , wherein the compound (Ca) is a compound represented by the following formula (FAD-Ia):

HO—CH 2 -A a101 -CH 2 —OH  (FAD-Ia)

wherein A a101 represents a perfluoroalkylene group or a perfluorocycloalkylene group.

3. The chemical amplification resist composition as claimed in claim 1 , wherein the content of the component (C) in the solids content of the chemical amplification resist composition is from 0.1 to 10 mass %.

4. The chemical amplification resist composition as claimed in claim 1 , wherein the resin (A) has at least one repeating unit selected from the group consisting of a repeating unit having a partial structure containing alicyclic hydrocarbon represented by the following formula (pI), (pII), (pIII), (pIV), (pV) or (pVI), and a repeating unit represented by the following formula (II-AB):

wherein R 11 represents an alkyl group; Z represents an atomic group necessary to form an alicyclic hydrocarbon group together with a carbon atom;

R 12 , R 13 , R 14 , R 15 and R 16 each represents an alkyl group or an alicyclic hydrocarbon group, provided that at least one of R 12 to R 14 , or either R 15 or R 16 , represents an alicyclic hydrocarbon group;

R 17 , R 18 , R 19 , R 20 and R 21 each represents a hydrogen atom, an alkyl group or an alicyclic hydrocarbon group, provided that at least one of R 17 to R 21 represents an alicyclic hydrocarbon group, and either R 19 or R 21 represents an alkyl group or an alicyclic hydrocarbon group;

R 22 , R 23 , R 24 and R 25 each represents an alkyl group or an alicyclic hydrocarbon group, provided that at least one of R 22 to R 25 represents an alicyclic hydrocarbon group, and R 23 and R 24 may be bonded to each other to form a ring;

wherein R 11 ′ and R 12 ′ each represents a hydrogen atom, a cyano group, a halogen atom or an alkyl group; and

Z′ represents an atomic group to form an alicyclic structure together with the bonded two carbon atoms (C—C).

5. The chemical amplification resist composition as claimed in claim 1 , wherein the solvent (D) is a single solvent of alkyl lactate or propylene glycol monoalkyl ether carboxylate, or a mixed solvent containing at least two solvents selected from the group consisting of propylene glycol monoalkyl ether carboxylate, propylene glycol monoalkyl ether, cyclohexanone, and alkyl lactate.

6. The chemical amplification resist composition as claimed in claim 1 , which further contains a nitrogen-containing basic compound.

7. The chemical amplification resist composition as claimed in claim 1 , which further contains a surfactant containing at least one of a fluorine atom and a silicon atom.

8. A pattern-forming method comprising; forming a resist film with the chemical amplification resist composition as claimed in claim 1 ; and exposing and developing the resist film.