Driving circuit for display device

1. A driving circuit for a display device, comprising a plurality of stages connected to each other and sequentially generating output signals,

wherein each of the stages comprises a plurality of transistors,

wherein each of the transistors comprises:

a control electrode;

a first insulating layer comprising a first material formed on the control electrode and having a capacitance Csi and a resistance Rsi;

a semiconductor layer comprising a second material formed on the first insulating layer and having a capacitance Ci and a resistance Ri;

an input electrode, at least a portion of which formed on the semiconductor layer;

an output electrode, at least a portion of which formed on the semiconductor layer; and

a second insulating layer formed on the input and output electrodes,

wherein a thickness ratio of the semiconductor layer to the first insulating layer is in a range from 0.3 to 1.5,

wherein the first material of the first insulating layer and the second material of the semiconductor layer are chosen such that a relation of a voltage Vi over the first insulating layer and a voltage Vg applied to the control electrode satisfies the equation

V

i

⁡

(

t

)

=

V

g

⁡

[

1

-

C

i

C

Si

+

C

i

⁢

exp

⁡

(

-

t

τ

)

]

,

τ

=

(

C

Si

+

C

i

)

⁢

(

1

R

Si

+

1

⁢

R

i

)

-

1

,

where Csi and Rsi are the capacitance and the resistance of the semiconductor layer, respectively, Ci and Ri are the capacitance and the resistance of the first insulating layer, respectively, and τ is a time constant.

2. The driving circuit for the display device of claim 1 , wherein a dielectric ratio of the semiconductor layer to the first insulating layer is smaller than 1.

3. The driving circuit for the display device of claim 2 , wherein the voltage over the first insulating layer is smaller than the voltage applied to the control electrode.

4. The driving circuit for the display device of claim 3 , wherein the semiconductor layer comprises amorphous silicon.

5. The driving circuit for the display device of claim 4 , wherein a gate driver is integrated on the display device.

6. The driving circuit for the display device of claim 1 , wherein each of the transistors further comprises an ohmic contact between the semiconductor layer and the input electrode.

7. The driving circuit for the display device of claim 6 , wherein a capacitance ratio of the ohmic contact to the semiconductor layer is larger than 0.5.

8. The driving circuit for the display device of claim 1 , wherein each of the transistors further comprises an ohmic contact comprising a third material between the semiconductor layer and the output electrode and having a capacitance Cex and a resistance Rex.

9. The driving circuit for the display device of claim 8 , wherein a capacitance ratio of the ohmic contact to the semiconductor layer is larger than 0.5.

10. The driving circuit for the display device of claim 8 , wherein the third material of the ohmic contact is chosen such that the relation of the voltage Vi over the first insulating layer and the voltage Vg applied to the control electrode further satisfies the equation

Vi

⁡

(

t

)

=

Vg

⁡

[

1

-

C

i

⁢

C

si

+

C

i

⁢

C

ex

C

i

⁢

C

si

+

C

si

⁢

C

ex

+

C

i

⁢

C

ex

⁢

exp

⁡

(

-

t

τ

)

]

,

⁢

τ

=

(

C

i

+

C

si

+

C

ex

)

⁢

(

1

R

i

+

1

R

Si

+

1

R

ex

)

-

1

,

where Ci and Ri are the capacitance and the resistance of the first insulating layer, respectively, Csi and Rsi are the capacitance and the resistance of the semiconductor layer, respectively, Cex and Rex are the capacitance and the resistance of the ohmic contact, respectively, and τ is a time constant.

11. The driving circuit for the display device of claim 10 , wherein the voltage over the first insulating layer is smaller than the voltage applied to the control electrode.