Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
View Patent ↗A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O 2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
1. A method of manufacturing a semiconductor device comprising the steps of:
preparing an underlying structure having a semiconductor substrate, a copper wiring formed above said semiconductor substrate and a silicon carbide layer covering said copper wiring; and
growing a silicon oxycarbide layer on said underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of said carbon dioxide gas.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the flow rate of said oxygen gas is 0%.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein following the growth of said silicon oxycarbide layer, a surface of said silicon oxycarbide layer is slightly oxidized with CO2 plasma.
4. The method of manufacturing a semiconductor device according to claim 1 , further comprising the step of forming a trench in an insulating layer including said silicon oxycarbide layer and burying a wiring in said trench.