Semiconductor device manufacturing method and electronic equipment using same
View Patent ↗A method of manufacturing semiconductor devices includes the following steps. That is, a support board is adhered to a rear surface of a substrate proper which has a plurality of circuit element parts with prescribed functions formed on a circuit forming plane on an obverse surface thereof. First groove portions are formed in the substrate proper. An insulating film ( 17 ) is formed on a surface of a semiconductor substrate ( 50 ) by using an insulating material, and holes are formed in the first groove portions. Metal wiring patterns ( 8 ) are formed which extend from electrode portions to at least parts of inner walls of the holes. A prescribed amount of the support board at a bottom of each of the holes is removed. A conductive material is filled into the holes thereby to form penetration electrodes ( 10 ). A second groove portions are formed in the first groove portions.
1. An electronic device including:
a plurality of semiconductor devices, wherein each of said plurality of semiconductor devices comprises:
a substrate including a front surface, a circuit element part on said front surface having electrode portions, and a rear surface opposite said front surface;
an insulating material extending outwardly from peripheral portions of the substrate, the insulating material having through holes outside each of the peripheral portions of the substrate, each of the through holes having a top opening and a bottom opening opposite the top opening;
metal wiring patterns extending from the electrode portions to inside said through holes, respectively; and
a conductive material in each of said through holes;
wherein one part of the conductive material protrudes from the top opening of each of the through holes and is located above the front surface of the substrate in a cross-sectional view, and another part of the conductive material protrudes from the bottom opening of each of the through holes and is located below the rear surface of the substrate in a cross-sectional view; and
wherein said plurality of semiconductor devices are laminated such that vertically adjacent conductive materials are directly connected with each other.