IP Library Granted Patent US 7,833,640
Granted Patent B2
US 7,833,640 · App. 11/208,207 · Granted Nov 16, 2010

Intermediate tri-layer structure for perpendicular recording media

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,833,640
App. No.
11/208,207
Granted
Nov 16, 2010
Kind
B2
Abstract

An improved structure for the construction of perpendicular recording media is disclosed. The structure includes a tri-layer IML resident between a soft under layer CoTaZr film and a CoPtCr—SiO 2 magnetic media. In an embodiment, the tri-layer comprises a Ru x Cr 1−x layer over dual nucleation layers of Ni—Fe and Ni—Fe—Cr. The tri-layer replaces the typical Ru and Ni—Fe intermediate layers of the prior art, resulting in considerable improvement in lattice matching between the Ru containing intermediate layer and the CoPtCr—SiO 2 magnetic media, further resulting in improved magnetic media performance.

Claims (42)

1. A perpendicular recording media comprising:

a magnetic recording layer;

a soft under layer; and,

an intermediate layer structure disposed between said magnetic recording layer and said soft under layer, further comprising

a first nucleation layer formed over and in contact with said soft under layer, said first nucleation layer comprising a binary Ni alloy of the form Ni-M, M being chosen from the group consisting of Fe, Mn, Co, V, W, and Cu, said first nucleation layer having a thickness between 0.1 nm and 6 nm,

a second nucleation layer formed over and in contact with said first nucleation layer, said second nucleation layer comprising a Ni alloy including at least two other elements, said second nucleation layer having a thickness between 0.1 nm and 6 nm, and

an hcp under layer formed over and in contact with said second nucleation layer, said hcp under layer comprising a Ru alloy.

2. The media as recited in claim 1 , wherein said second nucleation layer is a ternary Ni alloy.

3. The media as recited in claim 2 , wherein said ternary Ni alloy is of the form Ni-A-B, where A and B are chosen from the group consisting of Fe, Cr, Mn, Co, V, W and Cu.

4. The media as recited in claim 3 , wherein A is Fe and B is Cr.

5. The media as recited in claim 4 , wherein said ternary Ni alloy has a Ni concentration between 40 and 80 atomic %, an Fe concentration between 8 and 30 atomic %, and a Cr concentration between 15 and 40 atomic %.

6. The media as recited in claim 5 , wherein said ternary Ni alloy has a Ni concentration between 50 and 64 atomic %, an Fe concentration between 16 and 12 atomic %, and a Cr concentration between 20 and 38 atomic %.

7. The media as recited in claim 1 , wherein said magnetic recording layer comprises Co, Pt, Cr, and SiO2; and, said soft under layer comprises Co, Ta, and Zr.

8. The media as recited in claim 1 , wherein said binary Ni alloy has a Ni concentration between 72 and 92 atomic %.

9. The media as recited in claim 1 , wherein M is Fe.

10. The media as recited in claim 9 , wherein said binary Ni alloy has the Ni concentration of about 80 atomic %, and an Fe concentration of about 20 atomic %.

11. The media as recited in claim 1 , wherein said second nucleation layer is about 2.0 nm in thickness.

12. The media as recited in claim 1 , wherein said first nucleation layer is about 2.0 nm thick.

13. The media as recited in claim 1 , wherein said Ru alloy is of the form Ru-D, where D is chosen from the group consisting of Cr, Mn, V, Co, Fe, Cu, Re, Os and Zn.

14. The media as recited in claim 13 , wherein D is Cr.

15. The media as recited in claim 13 , wherein said hcp under layer is between 6 and 24 nm thick.

16. The media as recited in claim 13 , wherein said hcp under layer is about 16 nm thick.

17. The media as recited in claim 1 , wherein said Ru alloy has a Ru concentration between 65 and 85 atomic %.

18. The media as recited in claim 1 , wherein said Ru alloy has a Ru concentration of about 75 atomic %.

19. A perpendicular recording media comprising:

a magnetic recording layer;

a soft under layer; and,

an intermediate layer structure disposed between said magnetic recording layer and said soft under layer, further comprising

a first nucleation layer formed over and in contact with said soft under layer, said first nucleation layer comprising a Ni—Fe alloy, said first nucleation layer having a thickness between 0.1 nm and 6 nm,

a second nucleation layer formed over and in contact with said first nucleation layer, said second nucleation layer comprising a Ni—Fe—Cr alloy, said first nucleation layer having a thickness between 0.1 nm and 6 nm, and

an hcp under layer formed over and in contact with said second nucleation layer, said hcp under layer comprising a Ru—Cr alloy.

20. The media as recited in claim 19 , wherein said magnetic recording layer comprises Co, Pt, Cr, and SiO2; and, said soft under layer comprises Co, Ta, and Zr.

21. The media as recited in claim 19 , wherein said Ni—Fe alloy has a Ni concentration between 72 and 92 atomic %.

22. The media as recited in claim 21 , wherein said Ni—Fe alloy has the Ni concentration of about 80 atomic %, and an Fe concentration of about 20 atomic %.

23. The media as recited in claim 19 , wherein said first nucleation layer is about 2.0 nm thick.

24. The media as recited in claim 19 , wherein said Ni—Fe—Cr alloy has a Ni concentration between 40 and 80 atomic %, an Fe concentration between 8 and 30 atomic %, and a Cr concentration between 15 and 40 atomic %.

25. The media as recited in claim 19 , wherein said Ni—Fe—Cr alloy has a Ni concentration between 50 and 64 atomic %, an Fe concentration between 16 and 12 atomic %, and a Cr concentration between 20 and 38 atomic %.

26. The media as recited in claim 19 , wherein said second nucleation layer is about 1.8 nm thick.

27. The media as recited in claim 19 , wherein said Ru—Cr alloy has a Ru concentration between 65 and 85 atomic %.

28. The media as recited in claim 19 , wherein said Ru—Cr alloy has a Ru concentration of about 75 atomic %.

29. The media as recited in claim 19 , wherein said hcp under layer is between 6 and 24 nm thick.

30. The media as recited in claim 19 , wherein said hcp under layer is about 16 nm thick.

Assignments (4)
RELEASE OF SECURITY INTEREST AT REEL 052915 FRAME 0566 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 059127/0001 →
SECURITY INTEREST Recorded Feb 6, 2020
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS AGENT
Reel/Frame 052915/0566 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2016
From: HGST NETHERLANDS B.V.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 040819/0450 →
CHANGE OF NAME Recorded Oct 25, 2012
From: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
To: HGST NETHERLANDS B.V.
Reel/Frame 029341/0777 →