IP Library Granted Patent US 7,402,449
Granted Patent B2
US 7,402,449 · App. 11/208,740 · Granted Jul 22, 2008

Integrated micro electro-mechanical system and manufacturing method thereof

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Quick Facts
Patent No.
US 7,402,449
App. No.
11/208,740
Granted
Jul 22, 2008
Kind
B2
Abstract

In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.

Claims (38)

1. A manufacturing method of an integrated micro electro-mechanical system, in which a micro machine formed by using a manufacturing technology of a semiconductor integrated circuit and a semiconductor integrated circuit are formed on a semiconductor substrate, said method comprising the steps of:

(a) forming a mechanical structure which is a part of said micro machine, said mechanical structure including a fixed part which is elastically un-deformable and fixed to an interlayer dielectric layer, a movable part which is movable in a cavity, and an elastically deformable part which connects said fixed part with said movable part, a width of said fixed part is wider than a width of said elastically deformable part in plan view;

(b) forming the interlayer dielectric layer covering said mechanical structure, said interlayer dielectric layer being formed as a part of an interconnect of said semiconductor integrated circuit;

(c) forming said cavity in which said mechanical structure is placed by forming a film having holes on said interlayer dielectric layer which covers said mechanical structure and etching said interlayer dielectric layer around said mechanical structure through said holes to form said cavity; and

(d) sealing said cavity by sealing only said holes, wherein said step (a), said step (b), said step (c) and said step (d) are performed by using a technology for forming an interconnect of said semiconductor integrated circuit.

2. The manufacturing method of an integrated micro electro-mechanical system according to claim 1 ,

wherein, in said step (a), said mechanical structure is formed from the same layer as the interconnect which constitutes said semiconductor integrated circuit.

3. The manufacturing method of an integrated micro electro-mechanical system according to claim 1 ,

wherein, in said step (a), said movable part of said mechanical structure is formed from plural interconnect layers which constitute said semiconductor integrated circuit.

4. A manufacturing method of an integrated micro electro-mechanical system in which a micro machine formed by using a manufacturing technology of a semiconductor integrated circuit and a semiconductor integrated circuit are formed on a semiconductor substrate, said method comprising:

(a) forming a mechanical structure which is a part of said micro machine;

(b) forming an interlayer dielectric layer which covers said mechanical structure, said interlayer dielectric being formed between interconnects of said semiconductor integrated circuit;

(c) forming a cavity in which said mechanical structure by forming a film having holes on said interlayer dielectric layer which covers said mechanical structure and etching said interlayer dielectric layer around said mechanical structure through said holes to form said cavity; and

(d) sealing said cavity by sealing said holes,

wherein said step (a), said step (b), said step (c) and said step (d) are performed by using a technology for forming an interconnect of a MOSFET,

wherein said step (c) includes the steps of:

(c1) forming a film having first holes and a second hole larger than said first holes therein on said interlayer dielectric;

(c2) forming said cavity by etching said interlayer dielectric around said mechanical structure through said first holes and said second hole;

(c3) filling said first holes with a dielectric while keeping said second hole open; and

(c4) removing said dielectric formed by said step (c3) on said mechanical structure,

wherein, in said step (d), said second hole is sealed.

5. The manufacturing method of an integrated micro electro-mechanical system according to claim 1 ,

wherein said micro machine is formed and stacked above a MOSFET which constitutes said semiconductor integrated circuit.

6. The manufacturing method of an integrated micro electro-mechanical system according to claim 1 ,

wherein said step (c) includes the steps of:

(c1) forming a film having first holes and a second hole larger than said first holes therein on said interlayer dielectric;

(c2) forming said cavity by etching said interlayer dielectric around said mechanical structure through said first holes and said second hole;

(c3) filling said first holes with a dielectric while keeping said second hole open; and

(c4) removing said dielectric formed by said step (c3) on said mechanical structure,

wherein, in said step (d), said second hole is sealed.

7. The manufacturing method of an integrated micro electro-mechanical system according to claim 1 ,

wherein, in said step (a), said fixed part, said elastically deformable part and said moveable part are formed on an identical level and identically thick.

8. The manufacturing method of an integrated micro electro-mechanical system according to claim 1 ,

wherein, in said steps (b)-(d), said fixed part, said elastically deformable part and said moveable part remain on an identical level and identically thick.

9. The manufacturing method of an integrated micro electro-mechanical system according to claim 1 ,

wherein, in said step (a), said movable part is formed to directly connect only with said elastically deformable part to provide a free end which dangles freely in said cavity.

10. The manufacturing method of an integrated micro electro-mechanical system according to claim 1 ,

wherein, in said step (a), said elastically deformable part is formed narrower than said fixed part and said moveable part, and shaped spiral to position the fixed part on an edge of said mechanical structure and the moveable part at a center of said mechanical structure.

Assignments (4)
CHANGE OF NAME Recorded Nov 30, 2021
From: HITACHI AUTOMOTIVE SYSTEMS, LTD.
To: HITACHI ASTEMO, LTD.
Reel/Frame 058481/0935 →
DEMERGER Recorded Nov 29, 2021
From: HITACHI, LTD.
To: HITACHI AUTOMOTIVE SYSTEMS, LTD.
Reel/Frame 058960/0001 →
RE-RECORD TO CORRECT FIRST NAME OF FIRST ASSIGNOR PREVIOUSLY RECORDED ON ASSIGNMENT DOCUMENT REEL/FRAME 017178/0811. (ASSIGNMENT OF ASSIGNOR'S INTEREST) Recorded Mar 13, 2006
From: FUKUDA, HIROSHI; FUJIMORI, TSUKASA; YOKOYAMA, NATSUKI; HANAOKA, YUKO; MATSUMURA, TAKAFUMI
To: HITACHI, LTD.
Reel/Frame 017677/0788 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 3, 2005
From: FUKUDA, IHIROSHI; FUJIMORI, TSUKASA; YOKOYAMA, NATSUKI; HANAOKA, YUKO; MATSUMURA, TAKAFUMI
To: HITACHI, LTD.
Reel/Frame 017178/0811 →