Semiconductor processing components and semiconductor processing utilizing same
View Patent ↗A semiconductor processing component includes a substrate and a layer overlying the substrate. The layer has a composition ReA y O 1.5+2y , wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (Si 1−a Ge a ), 0.25≦y≦1.2, and 0≦a≦1.
1. A semiconductor processing component, comprising:
a substrate comprising SiC; and
a layer overlying the substrate, the layer comprising a composition ReA y O 1.5+2y , wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (Si 1−a Ge a ), 0.25≦y≦1.2, and 0≦a≦1,
wherein the semiconductor processing component includes the substrate and layer and is a batch or single wafer processing component.
2. The semiconductor processing component of claim 1 , wherein y is less than 1.
3. The semiconductor processing component of claim 2 , wherein y is greater than about 0.5.
4. The semiconductor processing component of claim 3 , wherein y is greater than about 0.75.
5. The semiconductor processing component of claim 1 , wherein a is less than 1.
6. The semiconductor processing component of claim 1 , wherein Re is Y, La, Nd, Gd, Pr, or combinations thereof.
7. The semiconductor processing component of claim 6 , wherein Re is Y.
8. The semiconductor processing component of claim 1 , wherein the a=0.
9. The semiconductor processing component of claim 1 , wherein the a=0, Re is Y, the composition comprising mainly YSiO 3.5 .
10. The semiconductor processing component of claim 9 , wherein the composition further includes YSi 0.5 O 2.5 .
11. The semiconductor processing component of claim 1 , wherein the layer has a thermal expansion coefficient at room temperature not more than 30% different from the substrate.
12. The semiconductor processing component of claim 11 , wherein the difference is not more than 20%.
13. The semiconductor processing component of claim 1 , wherein the batch processing component is capable of being utilized in a processing tool for treating multiple semiconductor wafers simultaneously.
14. The semiconductor processing component of claim 1 , wherein the single wafer processing component is capable of being utilized in a processing tool for treating a single semiconductor wafer at a time.
15. A deposition apparatus comprising:
the semiconductor processing component of claim 1 ; and
a halogen gas inlet.
16. A method of processing at least one semiconductor wafer, comprising:
loading at least one semiconductor wafer into a deposition apparatus, the deposition apparatus including a semiconductor processing component, the semiconductor processing component having an outer surface comprising a composition of ReA y O 1.5+2y , wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (Si 1−a Ge a ), 0.25≦y≦1.2, and 0≦a≦1.0;
processing the semiconductor wafer by depositing material on the wafer; and
cleaning the semiconductor processing component inside the deposition apparatus by exposure to a halogen-containing gas to remove deposited species from the processing component.
17. A wafer boat for supporting a plurality of semiconductor wafers, comprising:
a substrate comprising SiC; and
a layer overlying the substrate, the layer comprising a composition of ReA y O 1.5+2y , wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (Si 1−a Ge a ), 0.25≦y≦1.2, and 0≦a≦1, wherein the wafer boat has a plurality of slots for supporting a plurality of semiconductor wafers.