Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same

1. A radiation-emitting semiconductor body with a vertical emission direction, comprising:

a radiation-generating active layer;

a current-conducting layer having a current-blocking region and a current-permeable region, wherein the current permeable region is configured to overlap with a defined resonator volume of an external resonator to form a vertically emitting laser; and

two cladding layers of a first conduction type,

wherein the current-conducting layer is disposed between the two cladding layers and is of a second conduction type in the current-blocking region.

2. The radiation-emitting semiconductor body as in claim 1 , wherein the semiconductor body further comprises a radiation output face, a radiation output region defined on said radiation output face, and an electrical contact being disposed outside the radiation output region.

3. The radiation-emitting semiconductor body as in claim 2 , wherein the current-blocking region is disposed below the electrical contact in the vertical direction.

4. The radiation-emitting semiconductor body as in claim 1 , wherein the current-conducting layer is of the first conduction type in the current-permeable region.

5. The radiation-emitting semiconductor body as in claim 4 , wherein the current-conducting layer is doped in the current-permeable region with dopants of the first and second conduction types.

6. The radiation-emitting semiconductor body as in claim 1 , further comprising a mirror structure formed in the semiconductor body to form one end of the external resonator.

7. The radiation-emitting semiconductor body as in claim 6 , wherein the mirror structure is a Bragg mirror.

8. The radiation-emitting semiconductor body as in claim 1 , wherein the external resonator comprises a curved external mirror.

9. A vertically emitting semiconductor laser comprising:

the radiation-emitting semiconductor body as in claim 1 ; and

the external resonator.

10. The vertically emitting semiconductor laser as in claim 9 , wherein the external resonator comprises a curved external mirror.

11. The radiation-emitting semiconductor body as in claim 1 ,

wherein the current-blocking region is formed by means of at least one pn junction which in operation is a blocking pn junction.

12. A radiation-emitting semiconductor body with a vertical emission direction, comprising:

a radiation-generating active layer; and

a current-conducting layer having a current-blocking region and a current-permeable region, wherein the current permeable region is configured to overlap with a defined resonator volume of an external resonator to form a vertically emitting laser,

wherein the current-blocking region is formed by means of at least one pn junction which in operation is a blocking pn junction.

13. The radiation-emitting semiconductor body as in claim 12 , wherein the semiconductor body further comprises a radiation output face, a radiation output region defined on said radiation output face, and an electrical contact being disposed outside the radiation output region.

14. The radiation-emitting semiconductor body as in claim 13 , wherein the current-blocking region is disposed below the electrical contact in the vertical direction.

15. The radiation-emitting semiconductor body as in claim 12 , further comprising a mirror structure formed in the semiconductor body to form one end of the external resonator.

16. The radiation-emitting semiconductor body as in claim 15 , wherein the mirror structure is a Bragg mirror.

17. The radiation-emitting semiconductor body as in claim 12 , wherein the external resonator comprises a curved external mirror.

18. A vertically emitting semiconductor laser comprising:

the radiation-emitting semiconductor body as in claim 12 ; and

the external resonator.

19. The vertically emitting semiconductor laser as in claim 18 , wherein the external resonator comprises a curved external mirror.