Optical semiconductor device
View Patent ↗In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ΔEc and ΔEv, have been unable to be adjusted independently. This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer 3 , an MQW layer 4 , a p-type InGaAlAs-GRIN-SCH layer 5 , a p-type InAlAs electron-stopping layer 6 , and others, in that order, on an n-type InP wafer 1 ; wherein the MQW layer 4 includes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier layers each having strain of an opposite sign to the strain applied to the quantum well layers.
1. An optical semiconductor device comprising:
a first semiconductor layer with a first type of conductivity, formed on an InP semiconductor wafer;
a multi-quantum-well structure formed on said first semiconductor layer; and
a second semiconductor layer formed on said multi-quantum-well structure, wherein said second semiconductor layer has a second type of conductivity different from the first type of conductivity;
wherein:
said multi-quantum-well structure includes, in an alternately stacked form, quantum well layers each formed of InGaAlAs which has a lattice constant different from that of said InP semiconductor wafer, and barrier layers each formed of InGaAlAsSb which has lattice constants different from those of said InP semiconductor wafer and the InGaAlAs layer; and
each of the quantum well layers has first strain with respect to said InP semiconductor wafer, each of the barrier layers has second strain with respect to said InP semiconductor wafer, and a sign of the first strain and a sign of the second strain differ from each other.
2. The optical semiconductor device according to claim 1 , wherein:
said first semiconductor layer has a stacked structure in which a first cladding layer and a first optical separated confinement heterostructure are arranged in a stacked form;
said second semiconductor layer has a stacked structure in which a second cladding layer and a second optical separated confinement heterostructure are arranged in a stacked form; and
said multi-quantum-well structure is provided adjacently to each of the first optical separated confinement heterostructure and the second optical separated confinement heterostructure.
3. The optical semiconductor device according to claim 1 , wherein the multi-quantum-well structure layer has an impurity-doped barrier.
4. The optical semiconductor device according to claim 1 , wherein said optical semiconductor device is a semiconductor laser.
5. The optical semiconductor device according to claim 1 , wherein said optical semiconductor device is an electro-absorption optical modulator.
6. The optical semiconductor device according to claim 1 , wherein the optical integrated device is formed by integrating an electro-absorption optical modulator and a semiconductor laser.
7. The optical semiconductor device according to claim 6 , wherein: the electro-absorption optical modulator and the semiconductor laser are formed on an InP semiconductor wafer
one end of a first multi-quantum-well structure provided in the electro-absorption optical modulator and one end of a second multi-quantum-well structure provided in the semiconductor laser are optically coupled to each other; and
a front-edge anti-reflection coating and a rear-edge reflection coating are provided at the other end of the first multi-quantum-well structure and the other end of the second multi-quantum-well structure, respectively.
8. An optical semiconductor device comprising:
a multi-quantum-well structure formed on an InP semiconductor wafer;
a first semiconductor layer and second semiconductor layer for applying a voltage to or injecting an electric current into said multi-quantum-well structure;
a first electrode electrically connected to said first semiconductor layer; and
a second electrode electrically connected to said second semiconductor layer;
wherein:
said multi-quantum-well structure includes, in an alternately stacked form, quantum well layers each formed of InGaAlAs which has a lattice constant different from that of said InP semiconductor wafer, and barrier layers each formed of InGaAlAsSb which has lattice constants different from those of said InP semiconductor wafer and the InGaAlAs layer; and
each of the quantum well layers has first strain with respect to said InP semiconductor wafer, each of the barrier layers has second strain with respect to said InP semiconductor wafer, and a sign of the first strain and a sign of the second strain differ from each other.
9. The optical semiconductor device according to claim 8 , wherein:
said first semiconductor layer is formed up of at least one layer, inclusive of a first type of conductivity; and
said second semiconductor layer is formed up of at least one layer, inclusive of a second type of conductivity whose characteristics are opposite to those of the first type of conductivity.
10. The optical semiconductor device according to claim 8 , wherein: said first electrode is connected to a first semiconductor layer with a first type of conductivity by ohmic contact, and said second electrode is connected to a second semiconductor layer with a second type of conductivity different from that with the first type of conductivity, by ohmic contact.
11. The optical semiconductor device according to claim 8 , wherein, when a voltage or an electric current is applied or injected, respectively, between said first electrode and said second electrode, light generated in said multi-quantum-well will be guided in a routing direction of the electric current flowing between said first electrode and said second electrode.
12. The optical semiconductor device according to claim 8 , wherein, when a voltage or an electric current is applied or injected, respectively, between said first electrode and said second electrode, light generated in said multi-quantum-well will be guided in a direction different from a routing direction of the electric current flowing between said first electrode and said second electrode.
13. An optical semiconductor device comprising:
a first semiconductor layer with a first type of conductivity, formed on an InP semiconductor wafer;
a multi-quantum-well structure formed on said first semiconductor layer; and
a second semiconductor layer formed on said multi-quantum-well structure, wherein said second semiconductor layer has a second type of conductivity different from the first type of conductivity;
wherein:
said multi-quantum-well structure includes quantum well layers each formed of InGaAlAs which has a lattice constant different from that of said InP semiconductor wafer, a first barrier layer formed of InGaAlAsSb which has lattice constants different from those of said InP semiconductor wafer and the InGaAlAs layer, a first intermediate layer of InGaAlAsSb which has a composition ratio different from that of the InGaAlAsSb constituting the first barrier layer, and a second barrier layer having the same composition ratio as that of the first barrier layer;
at least one layer exists as a quantum well structure in which the first barrier layer, the quantum well layer, the first intermediate layer, and the second barrier layer are stacked in that order;
each of the quantum well layers has first strain with respect to said InP semiconductor wafer, and the first and second barrier layers each have second strain with respect to said InP semiconductor wafer; and
a sign of the first strain and a sign of the second strain differ from each other.
14. The optical semiconductor device according to claim 13 , wherein, in said multi-quantum-well structure, a quantum well layer on a conduction band side and a quantum well layer on a valence band side differ from each other in thickness.
15. The optical semiconductor device according to claim 13 , wherein, in said multi-quantum-well structure, a quantum well layer on a valence band side is thick, compared with the quantum well layer on a conduction band side.