Information acquiring method, information acquiring apparatus, semiconductor device comprising array of plurality of unit components for detecting physical quantity distribution, and semiconductor manufacturing method
View Patent ↗To enable an imaging apparatus to achieve high resolution and sufficient color reproducibility. A diffraction grating 1 is provided on the incident light side of a spectral image sensor 10 , the diffraction grating 1 including scatterers such as scatterers 3 , slits 5 , and scatterers 7 which are disposed in that order. An electromagnetic wave is scattered by the scatterers to produce diffracted waves, and by using the fact that interference patterns between the diffracted waves change with wavelengths, signals are detected for respective wavelengths by photoelectric conversion elements 12 B, 12 G, and 12 R in each photodiode group 12.
1. A method comprising:
separating an electromagnetic wave into a plurality of wavelength components by a diffraction effect, the diffraction effect resulting from the electromagnetic wave passing through openings of a diffraction grating in a semiconductor device, the diffraction grating being parallel to an incidence surface of a substrate of the semiconductor device, the diffraction grating including (i) a plurality of first scatterers, (ii) a plurality of second scatterers between the first scatterers and the incidence surface, (iii) a plurality of third scatterers between the second scatterers and the incidence surface;
directing the plurality of wavelength components onto corresponding positions on the incidence surface; and
detecting the wavelength components directed out of the diffraction grating,
wherein,
the first, second and third scatterers in the diffraction grating are configured such as to separate the electromagnetic wave into the plurality of wavelength components and direct the wavelength components onto the corresponding positions on the incidence surface,
the semiconductor device further includes a plurality of photodiode groups on the incident surface side that are positioned such as to receive the wavelength components directed out of the diffraction grating, and
the photodiode groups are used in the detecting step, each of the photodiode groups including a plurality of photoelectric conversion elements that (i) each detect a respective wavelength component corresponding to one of primary colors of red, green, and blue, and (ii) output a respective signal charge for conversion into a signal corresponding to the detected wavelength component, photoelectric conversion elements of adjacent photodiode groups being arranged in a transverse direction of the substrate to detect the colors in the order of blue, green, red, green, blue, green, red, green, blue, . . . .
2. A semiconductor device comprising:
a substrate, the substrate having an incident surface upon which a wavelength component of an electromagnetic wave is incident;
a diffraction grating, the diffraction grating positioned parallel to the incidence surface, that includes (i) a plurality of first scatterers, (ii) a plurality of second scatterers between the first scatterers and the incidence surface, and (iii) a plurality of third scatterers between the second scatterers and the incidence surface; and
a plurality of photodiode groups on the incident surface side,
wherein,
the first, second and third scatterers in the diffraction grating are configured such as to separate the electromagnetic wave into a plurality of wavelength components and direct the wavelength components onto corresponding positions on the incidence surface,
the plurality of photodiode groups on the incident surface side are positioned such as to receive the wavelength components directed out of the diffraction grating, and
each of the photodiode groups includes a plurality of photoelectric conversion elements that (i) each detect a respective wavelength component corresponding to one of primary colors of red, green, and blue, and (ii) output a respective signal charge for conversion into a signal corresponding to the detected wavelength component, photoelectric conversion elements of adjacent photodiode groups being arranged in a transverse direction of the substrate to detect the colors in the order of blue, green, red, green, blue, green, red, green, blue, . . . .
3. The semiconductor device according to claim 2 , wherein the first scatterers each have an opening of a predetermined shape and a cut-off portion provided around the opening, the openings being periodically disposed.
4. The semiconductor device according to claim 3 , wherein the predetermined shape is a long shape, a square shape, or a circular shape, and the openings are disposed in parallel with the incident surface of the substrate.
5. The semiconductor device according to claim 3 , wherein the second scatterers each have an opening of a predetermined shape and a cut-off portion provided around the opening, the openings of the second scatterers being disposed in parallel with the openings of the first scatters.
6. The semiconductor device according to claim 5 , wherein the openings of the second scatters are disposed periodically, and a period of the openings of the second scatters is the same as a period of the openings of the first scatters.
7. The semiconductor device according to claim 5 , wherein each of the openings of the second scatterers is substantially disposed on a center line passing through a center between the cut-off portions of adjacent first scatterers.
8. The semiconductor device according to claim 5 , wherein:
the third scatterers each have an opening of a predetermined shape and a cut-off portion provided around the opening, the openings of the third scatterers being disposed in parallel with the openings of the second scatters,
the openings of the second scatters being disposed periodically,
the openings of the third scatters being disposed periodically,
and a period of the third openings being the same as a period of at least one of the openings of the first scatters and the openings of the second scatters.
9. The semiconductor device according to claim 2 , wherein each of the photoelectric conversion elements comprises a pn junction, and the width of the pn junction in a signal read direction is set to be less than 1.0 μm.
10. The semiconductor device according to claim 2 , wherein each of the photoelectric conversion elements comprises a pn junction, and the width of the pn junction in a signal read direction is set to be no greater than 0.3 μm.
11. The semiconductor device according to claim 2 , wherein each photoelectric conversion element for detecting a blue wavelength component comprises a pn junction, and a maximum depth of the pn junction is set in the range of 0.2+−0.3 μm.
12. The semiconductor device according to claim 2 , wherein each photoelectric conversion element for detecting a green wavelength component comprises a pn junction, and a maximum depth of the pn junction is set in the range of 0.8+−0.3 μm.
13. The semiconductor device according to claim 2 , wherein each photoelectric conversion element for detecting a red wavelength component comprises a pn junction, and a maximum depth of the pn junction is set in the range of 1.4+−0.6 μm.
14. The semiconductor device according to claim 2 , wherein the diffraction grating is formed to disperse a visible light band into the plurality of wavelength components.