Shallow trench isolation by atomic-level silicon reconstruction
View Patent ↗Methods of forming an improved shallow trench isolation (STI) region are disclosed. Several exemplary techniques are proposed for treating STI sidewalls to improve the silicon (Si) surface at the atomic level. Each of the exemplary methods creates a smooth STI sidewall surface, prior to performing oxidation, by reconstructing silicon atoms at the surface. The suggested STI region can be used in imager pixel cells or memory device applications.
1. A method of forming an isolation region for a semiconductor device, comprising the acts of:
forming a trench having surfaces forming sidewalls and a bottom in a substrate;
smoothing said surfaces of said sidewalls and said bottom by reducing a plurality of dangling atomic bonds at said surfaces, wherein the reducing act comprises applying a high temperature electric field emission to at least one of said surfaces of said trench to thereby pull silicon atoms from said substrate to said at least one of said surfaces;
oxidizing said trench having said smoothed sidewall and bottom surfaces; and
filling said trench with a dielectric material.
2. The method of claim 1 , wherein the reducing act comprises annealing a region including the trench in a noble gas environment.
3. The method of claim 1 , wherein the reducing act comprises annealing a region including the trench in a hydrogen gas environment.
4. The method of claim 1 , wherein the reducing act comprises performing anisotropic dry etching to form substantially vertical sidewalls for said trench.
5. The method of claim 4 , wherein the act of filling said trench with a dielectric material comprises performing a flowable oxide process to fill said trench having vertical sidewalls with an oxide material.
6. The method of claim 1 , wherein the reducing act comprises sputtering a region at least partially in said trench with an argon gas.
7. The method of claim 6 , further comprising the act of annealing said region at a temperature greater than about 1000° C.
8. The method of claim 6 , wherein the argon sputtering is performed with an argon beam having a current within the range of about 300 to about 800 eV.
9. The method of claim 6 , wherein a rate of said sputtering is within the range of about 10 to about 310 Å/mm.
10. The method of claim 6 , wherein a rate of said sputtering is within the range of about 10 to about 310 Å/mm.
11. The method of claim 1 , wherein said step of reducing said dangling atomic bonds smoothes the entire surfaces of said sidewalls and said bottom.
12. A method of forming a pixel cell comprising:
forming at least one active area in a substrate; and
forming an isolation region in said substrate adjacent said at least one active area by the acts of:
forming a trench having surfaces forming sidewalls and a bottom in said silicon substrate;
smoothing said surfaces of said sidewalls and said bottom by reducing a plurality of dangling atomic bonds at said surfaces, wherein the reducing act comprises applying a high temperature electric field emission to at least one of said surfaces of said trench to thereby pull silicon atoms from said substrate to said at least one of said surfaces;
oxidizing said trench having said smoothed sidewall and bottom surfaces; and
filling said trench with a dielectric material.
13. The method of claim 12 , wherein the reducing act comprises annealing a region including the trench in a noble gas environment.
14. The method of claim 12 , wherein the reducing act comprises annealing a region including the trench in a hydrogen gas environment.
15. The method of claim 12 , wherein the reducing act comprises performing anisotropic dry etching to form substantially vertical sidewalls for said trench.
16. The method of claim 15 , wherein the act of filling said trench with a dielectric material comprises performing a flowable oxide process to fill said trench having vertical sidewalls with an oxide material.
17. The method of claim 12 , wherein the reducing act comprises sputtering a region at least partially in said trench with an argon gas.
18. The method of claim 17 , further comprising the act of annealing said region at a temperature greater than about 1000° C.
19. The method of claim 17 , wherein the argon sputtering is performed with an argon beam having a current within the range of about 300 to about 800 eV.
20. The method of claim 17 , wherein a rate of said sputtering is within the range of about 10 to about 310 Å/mm.
21. The method of claim 12 , wherein said step of reducing said dangling atomic bonds smoothes the entire surfaces of said sidewalls and said bottom.
22. A method of forming a memory device comprising the acts of:
forming at least two active areas in a substrate; and
forming an isolation region in said substrate between said two active areas, by the acts of:
forming a trench having surfaces forming sidewalls and a bottom in said substrate;
smoothing said surfaces of said sidewalls and said bottom by reducing a plurality of dangling atomic bonds at said surfaces, wherein the reducing act comprises applying a high temperature electric field emission to at least one of said surfaces of said trench to thereby pull silicon atoms from said substrate to said at least one of said surfaces; and oxidizing said trench having said smoothed sidewall and bottom surfaces; and filling said trench with a dielectric material.
23. The method of claim 22 , wherein the reducing act comprises annealing a region including the trench in a noble gas environment.
24. The method of claim 22 , wherein the reducing act comprises annealing a region including the trench in a hydrogen gas environment.
25. The method of claim 22 , wherein the reducing act comprises performing anisotropic dry etching to form substantially vertical sidewalls for said trench.
26. The method of claim 25 , wherein the act of filling said trench with a dielectric material comprises performing a flowable oxide process to fill said trench having vertical sidewalls with an oxide material.
27. The method of claim 22 , wherein the reducing act comprises sputtering a region at least partially in said trench with an argon gas.
28. The method of claim 27 , further comprising the act of annealing said region at a temperature greater than about 1000° C.
29. The method of claim 27 , wherein the argon sputtering is performed with an argon beam having a current within the range of about 300 to about 800 eV.
30. The method of claim 22 , wherein said step of reducing said dangling atomic bonds smoothes the entire surfaces of said sidewalls and said bottom.