Organic light emitting device and method of fabricating the same
View Patent ↗An organic light emitting device, and method of fabricating the same, in which a data line, a power line, or a data line and a power line of a unit pixel region are formed in a trench formed in an insulating layer. A first pixel electrode overlaps the trench.
1. An organic light emitting device, comprising:
a substrate; and
a plurality of unit pixel regions formed on the substrate,
wherein a unit pixel region includes a scan line, a data line, an insulating layer, and a first electrode,
wherein a portion of the data line is formed within a trench formed in the insulating layer, and a portion of the first electrode overlaps the trench.
2. The organic light emitting device of claim 1 , wherein the unit pixel region further comprises:
a first thin film transistor (TFT) and a second TFT;
an organic layer including at least an organic emission layer;
a second electrode;
a capacitor; and
a power line.
3. The organic light emitting device of claim 2 , wherein:
the scan line, the data line, and a bottom electrode of the capacitor are coupled with the first TFT;
a top electrode of the capacitor, the power line, and the first electrode are coupled with the second TFT; and
the top electrode of the capacitor is coupled with the power line.
4. The organic light emitting device of claim 1 , further comprising a planarization layer and a passivation layer below the first electrode.
5. The organic light emitting device of claim 4 , wherein the planarization layer and the passivation layer together are less than 2.0 μm thick.
6. The organic light emitting device of claim 1 , wherein a distance between a top surface of the data line and a bottom surface of the first electrode is 2.0 μm or more.
7. The organic light emitting device of claim 1 , wherein:
the unit pixel region further comprises a thin film transistor (TFT); and
the trench is simultaneously formed when forming a contact hole for a source electrode and a drain electrode of the TFT.
8. The organic light emitting device of claim 1 , wherein the insulating layer comprises an interlayer insulating layer, a gate insulating layer, and a buffer layer.
9. The organic light emitting device of claim 8 , wherein:
the interlayer insulating layer is about 2,000 Å to 6,000 Å thick;
the gate insulating layer is about 500 Å to 2,000 Å thick; and
the buffer layer is about 1,000 Å to 6,000 Å thick.
10. The organic light emitting device of claim 1 , wherein the trench is about 6,000 Å to 8,000 Å deep.
11. The organic light emitting device of claim 1 , wherein a distance from a bottom surface of the trench to a bottom surface of the first electrode is 2.0 μm or more.
12. An organic light emitting device comprising:
a substrate; and
a plurality of unit pixel regions formed on the substrate,
wherein a unit pixel region includes a scan line, a data line, a power line, an insulating layer, and a first electrode,
wherein a portion of the power line of an n th unit pixel region and a portion of the data line of an (n+1) th unit pixel region are formed within a trench formed in the insulating layer, and a portion of the first electrode overlaps the trench.
13. The organic light emitting device of claim 12 , wherein the unit pixel region further comprises:
a first thin film transistor (TFT) and a second TFT;
an organic layer including at least an organic emission layer;
a second electrode; and
a capacitor.
14. The organic light emitting device of claim 13 , wherein:
the scan line, the data line, and a bottom electrode of the capacitor are coupled with the first TFT;
a top electrode of the capacitor, the power line, and the first electrode are coupled with the second TFT; and
the top electrode of the capacitor is coupled with the power line.
15. The organic light emitting device of claim 12 , further comprising a planarization layer and a passivation layer below the first electrode.
16. The organic light emitting device of claim 15 , wherein the planarization layer and the passivation layer together are less than 2.0 μm thick.
17. The organic light emitting device of claim 12 , wherein a distance between a top surface of the data line and a bottom surface of the first electrode is 2.0 μm or more.
18. The organic light emitting device of claim 12 , wherein:
the unit pixel region further comprises a thin film transistor (TFT); and
the trench is simultaneously formed when forming a contact hole for a source electrode and a drain electrode of the TFT.
19. The organic light emitting device of claim 12 , wherein the insulating layer comprises an interlayer insulating layer, a gate insulating layer, and a buffer layer.
20. The organic light emitting device of claim 19 , wherein:
the interlayer insulating layer is about 2,000 Å to 6,000 Å thick;
the gate insulating layer is about 500 Å to 2,000 Å thick; and
the buffer layer is about 1,000 Å to 6,000 Å thick.
21. The organic light emitting device of claim 12 , wherein the trench is about 6,000 Å to 8,000 Å deep.
22. The organic light emitting device of claim 12 , wherein a distance from a bottom surface of the trench to a bottom surface of the first electrode is 2.0 μm or more.
23. A method of fabricating an organic light emitting device, comprising:
preparing a substrate;
forming a buffer layer, a gate insulating layer, and an interlayer insulating layer on the substrate;
forming a trench in the buffer layer, the gate insulating layer, and the interlayer insulating layer; and
forming a portion of a data line within the trench.
24. A method of fabricating an organic light emitting device, comprising:
preparing a substrate;
forming a buffer layer, a gate insulating layer, and an interlayer insulating layer on the substrate;
forming a trench in the buffer layer, the gate insulating layer, and the interlayer insulating layer; and
forming a portion of a data line and a portion of a power line neighboring the data line within the trench.
25. An organic light emitting device, comprising:
a substrate;
a plurality of unit regions, where a unit region is defined by a scan line, a data line, and a power line formed on the substrate;
a first thin film transistor (TFT), a second TFT, and a capacitor within the unit region;
a first electrode coupled with the second TFT; and
an organic layer, including at least an organic emission layer, and a second electrode formed on the first electrode,
wherein a portion of the data line and a portion of the power line are formed within a trench in an insulating layer, and
wherein the first electrode is formed within one unit region in a first pixel row and across two unit regions in a second pixel row.
26. The organic light emitting device of claim 25 , wherein the portion of the data line and the portion of the power line formed within the trench are larger than a region of the data line and a region of the power line that are overlapped by the first electrode.
27. The organic light emitting device of claim 25 , wherein the first electrode is one pixel electrode of red, green, and blue color unit pixels.
28. The organic light emitting device of claim 25 , wherein the insulating layer comprises an interlayer insulating layer, a gate insulating layer, and a buffer layer.
29. The organic light emitting device of claim 28 , wherein:
the interlayer insulating layer is about 2,000 Å to 6,000 Å thick;
the gate insulating layer is about 500 Å to 2,000 Å thick; and
the buffer layer is about 1,000 Å to 6,000 Å thick.
30. The organic light emitting device of claim 25 , further comprising a planarization layer and a passivation layer below the first electrode.
31. The organic light emitting device of claim 30 , wherein the planarization layer and the passivation layer together are less than 2.0 μm thick.
32. The organic light emitting device of claim 25 , wherein a distance between a top surface of the data line and a bottom surface of the first electrode is 2.0 μm or more.
33. The organic light emitting device of claim 25 , wherein the trench is simultaneously formed when forming a contact hole for a source electrode and a drain electrode of the TFT.
34. The organic light emitting device of claim 25 , wherein the trench is about 6,000 Å to 8,000 Å deep.
35. The organic light emitting device of claim 25 , wherein a distance from a bottom surface of the trench to a bottom surface of the first electrode is 2.0 μm or more.
36. A method of fabricating an organic light emitting device, comprising:
preparing a substrate;
forming a buffer layer on the substrate;
forming a gate insulating layer on the buffer layer;
forming a scan line and an interlayer insulating layer on the gate insulating layer;
etching at least one of the interlayer insulating layer, the buffer layer and the gate insulating layer to form a trench;
forming a portion of a data line and a portion of a power line within the trench;
forming a first pixel electrode formation material on the substrate; and
patterning the first pixel electrode formation material to form a first pixel electrode in one unit region in a first pixel row and across two unit regions in a second pixel row,
wherein a unit region is defined by the scan line, the data line, and the power line.