Nitride-based compound semiconductor light emitting device

1. A nitride-based compound semiconductor light emitting device, having a first ohmic electrode, a first bonding metal layer, a second bonding metal layer and a second ohmic electrode provided in this order on a conductive substrate, and also having a nitride-based compound semiconductor layer provided on the second ohmic electrode, wherein a part of a main surface of said second ohmic electrode is exposed.

2. The nitride-based compound semiconductor light emitting device according to claim 1 , wherein said nitride-based compound semiconductor layer includes at least a P-type layer, a light emitting layer and an N-type layer.

3. The nitride-based compound semiconductor light emitting device according to claim 2 , wherein a plane of said first bonding metal layer perpendicular to its thickness direction has an area that is greater than an area of a plane of said light emitting layer perpendicular to its thickness direction.

4. The nitride-based compound semiconductor light emitting device according to claim 1 , wherein said conductive substrate is a semiconductor of at least one kind selected from the group consisting of Si, GaAs, GaP, Ge and InP.

5. The nitride-based compound semiconductor light emitting device according to claim 1 , wherein said nitride-based compound semiconductor layer is formed using a support substrate, the support substrate being an insulative substrate of sapphire, spinel or lithium niobate, or a conductive substrate of silicon carbide, silicon, zinc oxide or gallium arsenide.

6. The nitride-based compound semiconductor light emitting device according to claim 1 , wherein said part of a main surface of said second ohmic electrode is exposed by etching.

7. The nitride-based compound semiconductor light emitting device according to claim 1 , wherein said part of a main surface of said second ohmic electrode has a width of not less than 1 μm and not more than 100 μm.

8. The nitride-based compound semiconductor light emitting device according to claim 1 , wherein a groove is formed from the exposed part of a main surface of said second ohmic electrode, and the nitride-based compound semiconductor light emitting device is fabricated by performing dividing along the groove.

9. A nitride-based compound semiconductor light emitting device, having a first ohmic electrode, a first bonding metal layer, a second bonding metal layer and a second ohmic electrode provided in this order on a conductive substrate, and also having a nitride-based compound semiconductor layer provided on the second ohmic electrode, wherein the nitride-based compound semiconductor layer includes at least a P-type layer, a light emitting layer and an N-type layer, in this order, and a part of a main surface of said P-type layer is exposed.

10. The nitride-based compound semiconductor light emitting device according to claim 9 , wherein said conductive substrate is a semiconductor of at least one kind selected from the group consisting of Si, GaAs, GaP, Ge and InP.

11. The nitride-based compound semiconductor light emitting device according to claim 9 , wherein said nitride-based compound semiconductor layer is formed using a support substrate, the support substrate being an insulative substrate of sapphire, spinel or lithium niobate, or a conductive substrate of silicon carbide, silicon, zinc oxide or gallium arsenide.

12. The nitride-based compound semiconductor light emitting device according to claim 9 , wherein a plane of said first bonding metal layer perpendicular to its thickness direction has an area that is greater than an area of a plane of said light emitting layer perpendicular to its thickness direction.

13. The nitride-based compound semiconductor light emitting device according to claim 9 , wherein said part of a main surface of said P-type layer is exposed by etching.

14. The nitride-based compound semiconductor light emitting device according to claim 9 , wherein said part of a main surface of said P-type layer has a width of not less than 1 μm and not more than 100 μm.

15. The nitride-based compound semiconductor light emitting device according to claim 9 , wherein a groove is formed from the exposed part of a main surface of said P-type layer, and the nitride-based compound semiconductor light emitting device is fabricated by performing dividing along the groove.

16. The nitride-based compound semiconductor light emitting device according to claim 15 , wherein said groove is formed down to a middle of said conductive substrate.

17. The nitride-based compound semiconductor light emitting device according to claim 15 , wherein said groove has a width of not less than 1 μm and not more than 50 μm.

18. The nitride-based compound semiconductor light emitting device according to claim 15 , wherein a scribe line is introduced from a back side of said conductive substrate opposite to the groove formed down to the middle of said conductive substrate.

19. The nitride-based compound semiconductor light emitting device according to claim 18 , fabricated by performing dividing along the groove formed down to the middle of said conductive substrate and the scribe line introduced from the back side of said conductive substrate.