Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same

1. A method for manufacturing a thin film transistor array panel, comprising:

forming a gate line having a gate electrode on a substrate;

depositing a gate insulating layer, a semiconductor layer, and a ohmic contact layer on the gate line;

patterning the semiconductor layer and the ohmic contact layer;

forming a drain electrode and a data line having a source electrode on the gate insulating layer and the ohmic contact layer, the drain electrode facing the source electrode with a gap therebetween;

forming a passivation layer having a contact hole exposing the drain electrode; and

forming a pixel electrode coupled with the drain electrode through the contact hole on the passivation layer, wherein at least one step of forming the gate line and forming the drain electrode and the data line includes stripping a photoresist layer with a photoresist stripper comprising about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.

2. The method of claim 1 , wherein the step of forming the gate line further comprises:

depositing a first metal layer comprising an aluminum-containing metal and a second metal layer comprising a molybdenum-containing metal; and

photoetching the first metal layer and the second metal layer.

3. The method of claim 2 , wherein the first metal layer comprises aluminum-neodymium.

4. The method of claim 1 , wherein the step of forming the drain electrode and the data line further comprises:

depositing a first metal layer of a molybdenum-containing metal, a second metal layer of an aluminum-containing metal, and a third metal layer of a molybdenum-containing metal in sequence; and

photoetching the first metal layer, the second metal layer, and the third metal layer.

5. The method of claim 1 , wherein the stripping of the photoresist layer is performed at a temperature of about 50° C. to about 80° C.

6. The method of claim 1 , wherein the stripping of the photoresist layer is performed for about 60 seconds to about 300 seconds.

7. The method of claim 1 , wherein the photoresist stripper is sprayed on the photoresist layer.

8. The method of claim 1 , whereIn at least one step of forming the gate line and forming the drain electrode and the data line includes etching with an etchant comprising phosphoric acid, nitric acid, acetic acid, and deionized water.

9. The method of claim 1 , wherein the alcohol amine is N-monoethanol amine, wherein the glycol ether is butyl diglycol, and wherein the chelating agent comprising about 0.1 wt % to about 3 wt % methyl gallate and about 0.1 wt % to about 3 wt % hydroxyl ethyl piperasane.

10. The method of claim 1 , wherein the data line and the semiconductor layer are formed by photoetching using a photoresist pattern having a first portion, a second portion thicker than the first portion, and a third portion thinner than the first portion.

11. The method of claim 10 , wherein the first portion is disposed between the source electrode and the drain electrode, and wherein the second portion is disposed on the data line and the drain electrode.