Microelectronic devices and methods for manufacturing microelectronic devices
Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. In one embodiment, a method for manufacturing microelectronic devices includes forming a stand-off layer over a plurality of microelectronic dies on a microfeature workpiece, removing selected portions of the stand-off layer to form a plurality of stand-offs on corresponding dies, cutting the workpiece to singulate the dies, attaching a first singulated die to a support member, and coupling a second die to the stand-off on the first singulated die.
1 . A method of manufacturing a microelectronic device, comprising:
forming a stand-off layer over a plurality of microelectronic dies on a microfeature workpiece;
removing selected portions of the stand-off layer to form a plurality of stand-offs on corresponding dies;
cutting the microfeature workpiece to singulate the dies;
attaching a first singulated die to a support member; and
coupling a second die to the stand-off on the first singulated die.
2 . The method of claim 1 wherein:
the microelectronic dies on the workpiece comprise an active side;
forming the stand-off layer on the workpiece comprises applying a photoactive material over the active side of the dies;
removing selected portions of the stand-off layer comprises (a) irradiating portions of the photoactive material, and (b) developing the photoactive material; and
the method further comprises (a) electrically coupling the first singulated die to the support member, (b) wire-bonding the second die to the support member, and (c) encapsulating the first and second dies and at least a portion of the support member.
3 . The method of claim 1 wherein forming the stand-off layer on the workpiece comprises spinning a photoactive material onto the workpiece.
4 . The method of claim 1 wherein:
forming the stand-off layer on the workpiece comprises applying a photoactive material onto the workpiece; and
removing selected portions of the stand-off layer comprises (a) irradiating portions of the photoactive material, and (b) developing the photoactive material.
5 . The method of claim 1 wherein:
the microelectronic dies on the workpiece comprise an active side; and
forming the stand-off layer comprises applying a photoactive material over the active side of the dies.
6 . The method of claim 1 , further comprising encapsulating the first and second dies and at least a portion of the support member.
7 . The method of claim 1 , further comprising:
wire-bonding the first singulated die to the support member; and
wire-bonding the second die to the support member.
8 . The method of claim 1 wherein removing selected portions of the stand-off layer comprises forming a single stand-off over the individual dies on the workpiece.
9 . The method of claim 1 wherein removing selected portions of the stand-off layer comprises forming a plurality of stand-offs over the individual dies on the workpiece.
10 . The method of claim 1 wherein:
the individual microelectronic dies on the workpiece comprise an integrated circuit and a plurality of terminals electrically coupled to the integrated circuit; and
removing selected portions of the stand-off layer comprises forming the stand-offs such that the individual stand-offs are inboard the terminals of the corresponding dies on the workpiece.
11 . The method of claim 1 , further comprising:
attaching a third singulated die to the support member; and
coupling a fourth die to the stand-off on the third singulated die.
12 . The method of claim 1 , further comprising depositing an adhesive paste onto the first singulated die.
13 . The method of claim 1 wherein attaching the first singulated die to the support member comprises coupling the first singulated die to an interposer substrate.
14 . A method of manufacturing a microelectronic device, comprising:
forming a stand-off on a first microelectronic die;
mounting the first microelectronic die to a support member after forming the stand-off on the first microelectronic die;
attaching a second microelectronic die to the stand-off on the first microelectronic die; and
encapsulating the first and second microelectronic dies and at least a portion of the support member.
15 . The method of claim 14 wherein forming the stand-off on the first microelectronic die comprises:
applying a stand-off layer on a microfeature workpiece having the first microelectronic die and a plurality of other microelectronic dies; and
removing selected portions of the stand-off layer to form a plurality of stand-offs on corresponding dies.
16 . The method of claim 14 wherein forming the stand-off on the first microelectronic die comprises:
applying a photoactive material onto the first microelectronic die;
irradiating portions of the photoactive material; and
developing the photoactive material.
17 . The method of claim 14 wherein forming the stand-off on the first microelectronic die comprises spinning a photoactive material onto a microfeature workpiece having the first microelectronic die and a plurality of other microelectronic dies.
18 . The method of claim 14 , further comprising:
forming a stand-off on a third microelectronic die;
coupling the third microelectronic die to the support member; and
attaching a fourth microelectronic die to the stand-off on the third microelectronic die;
wherein encapsulating the first and second microelectronic dies and at least a portion of the support member comprises encasing the first, second, third, and fourth microelectronic dies.
19 . The method of claim 14 wherein:
the first microelectronic die comprises an active side; and
forming the stand-off comprises constructing the stand-off on the active side of the first microelectronic die.
20 . The method of claim 14 , further comprising:
wire-bonding the first microelectronic die to the support member; and
wire-bonding the second microelectronic die to the support member.
21 . The method of claim 14 wherein the stand-off is a first stand-off, and wherein the method further comprises forming a second stand-off on the first microelectronic die.
22 . The method of claim 14 wherein:
the first microelectronic die comprises an integrated circuit and a plurality of terminals electrically coupled to the integrated circuit; and
forming the stand-off comprises constructing the stand-off such that the stand-off is positioned inboard the terminals of the first microelectronic die.
23 . The method of claim 14 , further comprising depositing an adhesive paste onto the first microelectronic die before attaching the second microelectronic die to the stand-off.
24 . The method of claim 14 wherein mounting the first microelectronic die to the support member comprises attaching the first microelectronic die to an interposer substrate.
25 . A method of manufacturing a microelectronic device, comprising:
providing a microelectronic die having an active side, a plurality of terminals on the active side, and an integrated circuit electrically coupled to the terminals;
forming a stand-off on the active side of the microelectronic die with at least a portion of the stand-off outboard the terminals; and
coupling the microelectronic die to a substrate with the active side of the microelectronic die facing the substrate.
26 . The method of claim 25 wherein forming the stand-off comprises:
applying a photoactive material onto the microelectronic die;
irradiating portions of the photoactive material; and
developing the photoactive material.
27 . The method of claim 25 wherein forming the stand-off comprises forming a dam around a perimeter region of the active side of the die.
28 . The method of claim 25 , further comprising forming a plurality of conductive interconnect elements on corresponding terminals, wherein coupling the microelectronic die to the substrate comprises electrically connecting the die to the substrate with the conductive interconnect elements.
29 . The method of claim 25 , further comprising forming a plurality of conductive interconnect elements on corresponding terminals, wherein the die further includes a surface on the active side, wherein the conductive interconnect elements project a first distance from the surface, wherein the stand-off projects a second distance from the surface, and wherein the first distance is greater than the second distance.
30 . The method of claim 25 wherein coupling the microelectronic die to the substrate comprises positioning the microelectronic die such that the stand-off is spaced apart from the substrate by a gap.
31 . The method of claim 25 , further comprising encapsulating the microelectronic die and at least a portion of the substrate.
32 . The method of claim 25 wherein the microelectronic die is a first microelectronic die, and wherein the method further comprises:
providing a second microelectronic die having an active side, a plurality of terminals on the active side, and an integrated circuit electrically coupled to the terminals;
forming a stand-off on the active side of the second microelectronic die with at least a portion of the stand-off outboard the terminals; and
coupling the second microelectronic die to the substrate with the active side of the second microelectronic die facing the substrate.
33 . The method of claim 25 wherein coupling the microelectronic die to the substrate comprises attaching the microelectronic die to an interposer substrate.
34 . A microelectronic device, comprising:
a support member;
a first microelectronic die including a back side attached to the support member, an active side opposite the back side, a plurality of terminals on the active side, and an integrated circuit electrically coupled to the terminals;
a plurality of stand-offs on the active side of the first microelectronic die; and
a second microelectronic die attached to the stand-offs.
35 . The microelectronic device of claim 34 wherein the stand-offs comprise a photoactive material.
36 . The microelectronic device of claim 34 wherein the support member comprises a plurality of contacts, and wherein the device further comprises a plurality of wire-bonds extending between the terminals of the first die and corresponding contacts on the support member.
37 . The microelectronic device of claim 34 wherein the support member comprises a plurality of first contacts and a plurality of second contacts, wherein the second microelectronic die comprises a plurality of terminals, and wherein the device further comprises (a) a plurality of first wire-bonds extending between the terminals of the first microelectronic die and corresponding first contacts, and (b) a plurality of second wire-bonds extending between the terminals of the second microelectronic die and corresponding second contacts.
38 . The microelectronic device of claim 34 , further comprising an adhesive paste between the first and second microelectronic dies.
39 . The microelectronic device of claim 34 , further comprising a casing covering the first and second microelectronic dies and at least a portion of the support member.
40 . The microelectronic device of claim 34 wherein the stand-offs are positioned inboard the terminals of the first microelectronic die.
41 . The microelectronic device of claim 34 wherein the stand-offs are attached to the first microelectronic die without an adhesive.
42 . The microelectronic device of claim 34 wherein the support member comprises an interposer substrate having a plurality of pads, and wherein the device further comprises a plurality of electrical couplers on corresponding pads.
43 . The microelectronic device of claim 34 wherein the stand-offs comprise at least three stand-offs.
44 . A microelectronic device, comprising:
a support member;
a first microelectronic die including a back side attached to the support member, an active side opposite the back side, a plurality of terminals on the active side, and an integrated circuit electrically coupled to the terminals;
a stand-off attached to the active side of the first microelectronic die without an adhesive between the stand-off and the active side of the first microelectronic die;
a second microelectronic die attached to the stand-off; and
an adhesive attaching the second microelectronic die to the stand-off.
45 . The microelectronic device of claim 44 wherein the stand-off comprises a photoactive material.
46 . The microelectronic device of claim 44 wherein the support member comprises a plurality of contacts, and wherein the device further comprises a plurality of wire-bonds extending between the terminals of the first die and corresponding contacts on the support member.
47 . The microelectronic device of claim 44 wherein the stand-off is a first stand-off, and wherein the device further comprises a second stand-off attached between the first and second microelectronic dies.
48 . The microelectronic device of claim 44 wherein the stand-off is a first stand-off, and wherein the device further comprises (a) a second stand-off attached between the first and second microelectronic dies, and (b) an adhesive paste between the first and second microelectronic dies.
49 . The microelectronic device of claim 44 , further comprising a casing covering the first and second microelectronic dies and at least a portion of the support member.
50 . The microelectronic device of claim 44 wherein the stand-off is positioned inboard the terminals of the first microelectronic die.
51 . A microelectronic device, comprising:
a substrate;
a microelectronic die including an active side attached to the substrate, a plurality of terminals on the active side, and an integrated circuit electrically coupled to the terminals; and
a dielectric stand-off on the active side of the microelectronic die and projecting toward the substrate, wherein at least a portion of the dielectric stand-off is positioned outboard the terminals.
52 . The microelectronic device of claim 51 wherein the substrate comprises a plurality of contacts, and wherein the device further comprises a plurality of interconnect elements electrically coupling the terminals to corresponding contacts.
53 . The microelectronic device of claim 51 wherein the dielectric stand-off comprises a photoactive material.
54 . The microelectronic device of claim 51 wherein the dielectric stand-off is spaced apart from the substrate by a gap.
55 . The microelectronic device of claim 51 , further comprising a casing covering the microelectronic die and at least a portion of the substrate.
56 . The microelectronic device of claim 51 wherein the substrate comprises an interposer substrate having a plurality of pads, and wherein the device further comprises a plurality of electrical couplers on corresponding pads.
57 . The microelectronic device of claim 51 wherein the dielectric stand-off comprises a dam surrounding a perimeter region of the active side of the die.