Metal contact systems for semiconductor-based pressure sensors exposed to harsh chemical and thermal environments
Highly corrosion resistant electrically conductive contact systems suitable for semiconductor pressure sensor devices exposed to acidic, elevated temperature environments, such as automotive exhaust gas environments, are disclosed. The preferred embodiment ( 10 ) comprises a platinum top layer ( 26 ), and a tantalum lower layer ( 24 ). Both are highly electrically conductive layers and exhibit corrosion resistance to acidic environments. The top layer of the metallization also provides a suitable material for the external connectivity (e.g., wire bonding, solder bumping, chip-chip fusion). The lower layer of the metallization also serves as an adhesion layer between the top metal and lower layers, typically silicon based glasses and in some cases serves as a diffusion barrier.
1 . A metal electrical contact system for a piezoresistive pressure sensor for use in harsh chemical and thermal environments comprising:
a semiconductor substrate, an electrically conductive impurity doped region formed in a portion of the substrate, a passivation layer formed on the said surface of the substrate including the impurity doped region, an opening formed in the passivation layer exposing a portion of the impurity doped region, an ohmic contact formed in a portion of the impurity doped region aligned with the opening, and a layer of one of tantalum and a tantalum alloy formed in the opening on the ohmic contact.
2 . A metal electrical contact system according to claim 1 in which the said layer of one of tantalum and a tantalum alloy extends over the sides of the opening and onto the passivation layer.
3 . A metal electrical contact system according to claim 1 further comprising a layer of precious metal on the said layer of one of the tantalum and a tantalum alloy.
4 . A metal electrical contact system according to claim 3 in which the precious metal is platinum.
5 . A metal electrical contact system according to claim 3 in which the precious metal is selected from the group consisting of platinum, gold, iridium, palladium, ruthenium, rhodium and alloys thereof.
6 . A metal electrical contact system according to claim 1 in which the said layer of one of tantalum and a tantalum alloy is approximately 500 angstroms thick.
7 . A metal electrical contact system according to claim 4 in which the platinum is approximately 4,000 angstroms thick.
8 . A metal electrical contact system according to claim 1 in which the ohmic contact is platinum silicide.
9 . A metal electrical contact system according to claim 1 in which the ohmic contact is tantalum silicide.
10 . A metal electrical contact system according to claim 1 further comprising piezoresistive elements formed on the semiconductor substrate and electrically interconnected to the impurity doped region.
11 . A metal electrical contact system for a semiconductor pressure sensor for use in harsh chemical and thermal environments comprising:
a semiconductor substrate, an electrically conductive impurity doped region formed in a portion of the substrate, a passivation layer formed on the said surface of the substrate including the impurity doped region, an opening formed in the passivation layer exposing a portion of the impurity doped region, an ohmic contact formed in at least a portion of the impurity doped region aligned with the opening, and a layer of one of niobium and a niobium alloy formed in the opening on the ohmic contact.
12 . A metal electrical contact system according to claim 11 in which the said layer of one of niobium and a niobium alloy extends over the sides of the opening and onto the passivation layer.
13 . A metal electrical contact system according to claim 11 further comprising a layer of precious metal on the said layer of one of the niobium and a niobium alloy.
14 . A metal electrical contact system according to claim 13 in which the precious metal is platinum.
15 . A metal electrical contact system according to claim 13 in which the precious metal is selected from the group consisting of platinum, gold, iridium, palladium, ruthenium, rhodium and alloys thereof.
16 . A metal electrical contact system according to claim 11 in which the said layer of one of niobium and a niobium alloy is approximately 500 angstroms thick.
17 . A metal electrical contact system according to claim 14 in which the platinum is approximately 4,000 angstroms thick.
18 . A metal electrical contact system according to claim 11 in which the ohmic contact is platinum silicide.
19 . A metal electrical contact system according to claim 11 in which the ohmic contact is tantalum silicide.
20 . A metal electrical contact system according to claim 11 further comprising piezoresistive elements formed on the semiconductor substrate and electrically interconnected to the impurity doped region.