Method of making a magnetic sensing device having an insulator structure
View Patent ↗A magnetic sensing device for use in a magnetic head includes a sensor stack structure having a sensing layer structure and an insulator structure formed adjacent the sensing layer structure. The insulator structure includes a plurality of oxidized metallic sublayers, a plurality of nitrided metallic sublayers, or a plurality of oxynitrided metallic sublayers. The insulator structure may be a capping layer structure of a giant magnetoresistance sensor or, alternatively, a tunnel barrier layer structure of a tunneling magnetoresistance sensor or a magnetic random access memory. Advantageously, each treated metallic sublayer is sufficiently uniformly treated so as to increase the magnetoresistive effect and improve soft magnetic properties of the magnetic sensing device. A method for use in forming the magnetic sensing device of the present application includes the steps of forming a sensor stack structure which includes a sensing layer structure; depositing a metallic layer; performing, on the metallic layer, either an oxidation, nitridation, or oxynitridation process; and repeating the steps of depositing and performing one or more times to thereby form an insulator structure.
1. A method of forming a magnetic sensing device, comprising:
forming a sensor stack structure of the magnetic sensing device, the sensor stack structure including a sensing layer structure;
forming a capping layer structure of the magnetic sensing device by:
depositing a first metallic layer comprising a metal;
performing, on the first deposited metallic layer, a process comprising one of oxidation, nitridation, and oxynitridation, to convert the first deposited metallic layer into a first insulator layer;
after converting the first deposited metallic layer into the first insulator layer, depositing, on the first insulator layer, a second metallic layer comprising the same metal as the first metallic layer; and
performing, on the second deposited metallic layer, the process utilized on the first deposited metallic layer, to convert the second deposited metallic layer into a second insulator layer, for thereby forming the capping layer structure which includes the first and the second insulator layers.
2. The method of claim 1 , wherein the metal comprises tantalum (Ta).
3. The method of claim 1 , wherein the process utilized on the first deposited metallic layer further comprises one of in-situ oxidation, in-situ nitridation, and in-situ oxynitridation.
4. The method of claim 1 , wherein the process utilized on the first deposited metallic layer further comprises one of a natural process, a radical shower process, a plasma process, and a reactive sputtering process.
5. The method of claim 1 , wherein the process utilized on the first deposited metallic layer further comprises one of: oxidation to fully oxidize the first deposited metallic layer from top to bottom, nitridation to fully nitridize the first deposited metallic layer from top to bottom, and oxynitridation to fully oxynitridize the first deposited metallic layer from top to bottom.
6. The method of claim 1 , wherein the process utilized on the first deposited metallic layer comprises oxidation, the first insulator layer is a first fully-oxidized metal layer, and the second insulator layer is a second fully oxidized metal layer.
7. The method of claim 1 , further comprising:
depositing, on the second insulator layer, a third metallic layer comprising the same metal as the first and the second metallic layers; and
performing, on the third deposited metallic layer, the process utilized on the first and the second deposited metallic layers, to convert the third deposited metallic layer into a third insulator layer, which thereby forms the capping layer structure having the first, the second, and the third insulator layers.
8. The method of claim 1 , wherein the capping layer structure has uniform atomic percent oxygen, or nitrogen, throughout from top to bottom.
9. The method of claim 1 , wherein the capping layer structure has uniform atomic percent oxygen throughout from top to bottom.
10. The method of claim 1 , wherein the capping layer structure is formed as Ta 2 O 5 throughout from top to bottom.
11. The method of claim 1 , wherein the first insulator layer is in contact with the second insulator layer.
12. The method of claim 1 , wherein the magnetic sensing device is utilized in a magnetic memory cell.