Inorganic scintillator and process for its fabrication
This invention provides an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising metal oxides including Lu, Gd, Ce and Si, which satisfies the condition specified by the following inequality (1A): 0.0025≦{ A Ce /( A Lu +A Gd )}≦0.025, (1A) and which has an absorption coefficient of no greater than 0.500 cm −1 for light with a wavelength of 415 nm.
1. An inorganic scintillator capable of producing scintillation by radiation, characterized by being a crystal comprising metal oxides including Lu, Gd, Ce and Si, by satisfying the condition specified by the following inequality:
0.005 ≦{A Ce /( A Lu +A Gd )}≦0.025 ,
(wherein A Lu represents the number of Lu atoms in the crystal, A Gd represents the number of Gd atoms in the crystal, and A Ce represents the number of Ce atoms in the crystal),
and by having an absorption coefficient of no greater than 0.500 cm −1 for light with a wavelength of 415 nm.
2. An inorganic scintillator according to claim 1 , which satisfies the condition specified by the following inequality (1B):
0.005 ≦{A Ce /( A Lu +A Gd )}≦0.015 (1B).
3. An inorganic scintillator according to claim 1 , which is a crystal belonging to monoclinic crystals of the space group C2/c.
4. An inorganic scintillator according to claim 1 , which satisfies the condition specified by the following inequality (2A):
0.10 {A Lu /( A Lu +A Gd )}≦0.50 (2A).
5. An inorganic scintillator according to claim 1 , which is a single crystal.
6. A process for fabrication of an inorganic scintillator according to claim 5 , comprising steps of:
growing a crystal by a single crystal growth method to obtain a single crystal ingot for construction of said inorganic scintillator, and
thereafter heating said signal crystal ingot, wherein the oxygen partial pressure of the surrounding atmosphere of said ingot is adjusted in said heating step so that the absorption coefficient of said single crystal is no greater than 0.500 cm −1 for light with a wavelength of 415 nm.
7. A process for fabrication of an inorganic scintillator according to claim 6 , wherein the ambient temperature of said ingot is adjusted in said heating step so that the absorption coefficient of said single crystal is no greater than 0.500 cm −1 for light with a wavelength of 415 nm.
8. A process for fabrication of an inorganic scintillator according to claim 6 , wherein the heating time of said ingot in said heating step is adjusted so that the absorption coefficient of said single crystal is no greater than 0.500 cm −1 for light with a wavelength of 415 nm.
9. A process for fabrication of an inorganic scintillator according to claim 6 , which further comprises a step of cooling said ingot after said heating step.
10. A process for fabrication of an inorganic scintillator according to claim 9 , which further comprises a step of cutting said ingot to a prescribed shape and size after said cooling step to obtain an inorganic scintillator.
11. A process for fabrication of an inorganic scintillator according to claim 6 , wherein during said heating step, heating temperature of said atmosphere is also adjusted such that said inorganic scintillator has said absorption coefficient.
12. A process for fabrication of an inorganic scintillator according to claim 6 , wherein said oxygen partial pressure is adjusted to be in a range of 0.1-1.0 vol %, and a heating temperature of said atmosphere during said heating step is 1500°-1920° C.
13. An inorganic scintillator according to claim 1 , which satisfies the condition specified by the following inequality (1C):
0.0075 ≦{A Ce /( A Lu +A Gd )}≦0.30.
14. An inorganic scintillator according to claim 1 , which satisfies the condition specified by the following inequality (2B):
0.15 ≦{A Lu /( A Lu +A Gd )}≦0.30.
15. An inorganic scintiliator capable of producing scintillation by radiation, being produced by a process comprising steps of:
growing a crystal by a single crystal growth method to obtain a single crystal ingot, and
thereafter heating the single crystal ingot,
wherein the inorganic scintillator is a crystal comprising metal oxides including Lu, Gd, Ce and Si, satisfies the condition specified by the following inequality (1A):
0.005 ≦{A Ce /( A Lu +A Gd )}≦0.025 (1A),
(wherein A Lu represents the number of Lu atoms in the crystal, A Gd represents the number of Gd atoms in the crystal, and A Ce represents the number of Ce atoms in the crystal), and has an absorption coefficient of no greater than 0.500 cm −1 for light with a wavelength of 415 nm.
16. An inorganic scintillator according to claim 15 , wherein heating temperature in the heating step is 1500-1920° C., and oxygen concentration in surrounding atmosphere of the ingot is 0.1-1.0 vol % during the heating step.