Method of manufacturing thin film device electro-optic device, and electronic instrument
View Patent ↗A method of manufacturing a thin film device includes forming a pair of multi-layered structures by bonding a transfer layer including a thin film device to a temporary transfer substrate, respectively adhering the transfer layers of a pair of the multi-layered structures to both surfaces of a transfer-target substrate; and separating the temporary transfer substrate from each of the transfer layers adhered to the transfer-target substrate. The bonding step includes forming the transfer layer on a transfer-source substrate via a first separation layer separated in accordance with application of a predetermined amount of energy, bonding the transfer layer to the temporary transfer substrate, and separating the transfer-source substrate from the transfer layer by applying energy to the first separation layer to cause a boundary separation and/or an intra-layer separation in the first separation layer.
1. A method of manufacturing a thin film device, comprising:
forming a pair of multi-layered structures each formed by bonding a transfer layer including a thin film device to a temporary transfer substrate, including;
forming the transfer layer on a transfer-source substrate via a first separation layer separated in accordance with application of a predetermined amount of energy,
bonding the transfer layer to the temporary transfer substrate, and
separating the transfer-source substrate from the transfer layer by applying energy to the first separation layer to cause a boundary separation and/or an intra-layer separation in the first separation layer;
respectively adhering the transfer layers of a pair of the multi-layered structures to both surfaces of a transfer-target substrate; and
separating the temporary transfer substrate from each of the transfer layers adhered to the transfer-target substrate.
2. The method according to claim 1 , wherein the step of bonding the transfer layer to the temporary transfer substrate includes:
forming a second separation layer separated in accordance with application of a predetermined amount of energy on the temporary transfer substrate; and
bonding the second separation layer formed on the temporary transfer substrate and the transfer layer to each other via an adhesive layer, and
wherein the step of separating the temporary transfer substrate includes:
separating the temporary transfer substrate from the transfer layer by applying energy to the second separation layer to cause a boundary separation and/or an intra-layer separation in the second separation layer.
3. The method according to claim 1 , wherein the transfer layers are adhered to the both surfaces of the transfer-target substrate via adhesive layers.
4. The method according to claim 3 , wherein the adhesive layer is made of a permanent adhesive.
5. The method according to claim 1 , wherein the thin film device includes at least one of a wiring film, an electrode, and a semiconductor device. adhesive.
6. An electro-optic device equipped with a thin film transistor manufactured using the method according to claim 1 .
7. An electronic instrument equipped with a thin film transistor manufactured using the method according to claim 1 .