Manufacturing method for strained silicon wafer
View Patent ↗A manufacturing method for producing a stained silicon wafer has the steps of forming an Si 1-x Ge x composition-graded layer of which Ge concentration is stepwisely increased on a single crystal silicon substrate, forming an Si 1-x Ge x uniform composition layer of which Ge concentration is constant on the Si 1-x Ge x composition-graded layer, forming a stain-relaxed Si 1-y Ge y layer of which Ge concentration y is constant while y satisfies relationship of 0.5x≦y<x on the Si 1-x Ge x uniform composition layer and epitaxially growing a strained Si layer on the strain-relaxed Si 1-y Ge y layer.
1. A manufacturing method for producing a strained silicon wafer, comprising the steps of:
forming an Si 1-x Ge x composition-graded layer that has a Ge concentration that is stepwisely increased on a single crystal silicon substrate;
forming an Si 1-x Ge x uniform composition layer having a constant Ge concentration on the Si 1-x Ge x composition-graded layer;
forming a strain-relaxed Si 1-y Ge y layer having a Ge concentration y that is constant, wherein y satisfies the relationship 0.5x≦y<x, wherein the strain-relaxed layer is formed on the Si 1-x Ge x uniform composition layer; and
epitaxially growing a strained Si layer on the strain-relaxed Si 1-y Ge y layer.
2. The manufacturing method of claim 1 , wherein the Ge concentration of the Si 1-x Ge x composition-graded layer increases at a gradient less than 25%/μm.
3. The manufacturing method of claim 1 , wherein the Si 1-x Ge x composition-graded layer is formed to a thickness of 1-3 μm.
4. The manufacturing method of claim 1 , wherein the Si 1-x Ge x uniform composition layer is formed to a thickness of 500-1000 nm.
5. The manufacturing method of claim 1 , wherein the strain relaxed Si 1-y Ge y layer is formed to a thickness of 10-200 nm.
6. The manufacturing method of claim 1 , wherein the strained Si layer is grown to a thickness of 5-50 nm.
7. The manufacturing method of claim 1 , further comprising a step of subjecting a surface of the strain-relaxed Si 1-y Ge y layer to a high temperature hydrogen heat treatment before forming the strained Si layer.