Method for manufacturing electronic device
View Patent ↗A method for manufacturing an electronic device comprising the steps of: dry-etching a Ti-containing metal film formed on a substrate with a gas containing fluorine; and treating the substrate with a chemical solution containing fluorine ions after the dry etching step.
1. A method for manufacturing an electronic device comprising the steps of:
dry-etching a Ti-containing metal film formed on a substrate with a gas containing fluorine;
treating the substrate with a chemical solution containing fluorine ions, and
removing a deposit containing TiFx generated on the substrate after the dry etching step.
2. A method according to claim 1 , wherein
the chemical solution is an aqueous solution containing 0.1% by weight or more of hydrofluoric acid.
3. A method according to claim 1 , wherein
the step of treating the substrate with the chemical solution includes the step of reducing electron density at the surface of the deposit by adsorbing H + on the surface of the deposit.
4. A method according to claim 3 , wherein
the chemical solution used to treat the substrate to reduce the electron density at the surface of the deposit has a pH of 1 or less.
5. A method according to claim 3 , wherein
the chemical solution used to treat the substrate to reduce the electron density at the surface of the deposit contains hydrochloric acid.
6. A method according to claim 3 , wherein
a voltage is applied to the substrate to reduce the electron density at the surface of the deposit.
7. A method for manufacturing an electronic device comprising the steps of:
dry-etching a Ti-containing metal film formed on a substrate with a gas containing fluorine;
reducing the electron density at the surface of the substrate by adsorbing H + on the surface of the substrate after the dry etching step; and
treating the substrate with a chemical solution containing fluorine ions after the step of reducing the electron density.
8. A method according to claim 7 , wherein
the electron density at the surface of the substrate is reduced by treating the surface of the substrate with hydrochloric acid.
9. A method according to claim 7 , wherein
a voltage is applied to the substrate to reduce the electron density at the surface of the substrate.
10. A method according to claim 1 , further comprising the step of reducing the electron density at the surface of the deposit by adsorbing H + on the surface of the deposit after the dry etching step and before the step of treating the substrate with the chemical solution.
11. A method according to claim 10 , wherein
the electron density at the surface of the deposit is reduced by treating the surface of the deposit with hydrochloric acid.
12. A method according to claim 11 , wherein
a voltage is applied to the substrate to reduce the electron density at the surface of the deposit.