Power semiconductor package

1. A semiconductor package comprising:

a semiconductor die that includes at least a first power electrode and a second power electrode, each power electrode including a plurality of spaced power fingers, said power fingers being arranged in an interdigitated pattern;

a first conductive clip that includes a plurality of first fingers each electrically and mechanically coupled to a respective one of said fingers of said first power electrode;

a first common connector integral with said first fingers;

a second conductive clip that includes a plurality of second fingers each electrically and mechanically coupled to a respective one of said fingers of said second power electrode;

a second common connector integral with said second fingers; and

a passivation body encapsulating at least said semiconductor die, wherein said first fingers and said second fingers are arranged in an interdigitated pattern, wherein said first and second common connectors are disposed opposite one another, and wherein said passivation body is formed from a passivation material that is capable of protecting said semiconductor die without another housing element.

2. The semiconductor package of claim 1 , wherein said semiconductor die is comprised of a III-nitride semiconductor.

3. The semiconductor package of claim 2 , wherein said III-nitride semiconductor is an alloy of InAlGaN.

4. The semiconductor package of claim 1 , further comprising a first control electrode, and a first conductive control electrode clip electrically and mechanically coupled to said first control electrode.

5. The semiconductor package of claim 4 , further comprising a current sense electrode, and a current sense clip electrically and mechanically coupled to said current sense electrode.

6. The semiconductor package of claim 1 , wherein said semiconductor die includes a first control electrode, and a first conductive control clip electrically and mechanically coupled to said first control electrode; and a second control electrode, and a second conductive control clip electrically and mechanically coupled to said second control electrode.

7. The semiconductor package of claim 6 , further comprising at least one current sense electrode, and a current sense clip electrically and mechanically connected to said current sense electrode.

8. The semiconductor package of claim 1 , wherein said first and said second conductive clips are electrically and mechanically connected to said first and said second power electrodes by a conductive adhesive.

9. The semiconductor package of claim 8 , wherein said conductive adhesive is comprised of an alloy of gold and tin.

10. The semiconductor package of claim 8 , wherein said conductive adhesive is either a solder or a conductive polymer.

11. The semiconductor package of claim 1 , wherein said passivation body is comprised of a polymer.

12. The semiconductor package of claim 11 , wherein said polymer comprises polysiloxane.