Granted Patent B2

US 7,468,315 · App. 11/225,951 · Granted Dec 23, 2008

Abstract

Claims (52)

1. A process for producing an electronic substrate, comprising:

(a) forming a plurality of nanowires on a first substrate;

(b) depositing a material over at least a portion of the plurality of nanowires to form a nonowire-material composite;

(c) removing the nanowire-material composite from the first substrate;

(d) attaching the nanowire-material composite to a portion of a second substrate such that the nanowires are aligned substantially parallel to each other on a surface of the second substrate;

(e) removing the material from the nanowire-material composite to form on the surface of the substrate the plurality of nanowires aligned substantially parallel to each other on the second substrate; and

(f) forming contacts to said plurality of nanowires to thereby provide electrical connectivity to said nanowires.

2. The process of claim 1 , wherein (d) comprises:

laminating said nanowire-material composite to said second substrate.

3. The process of claim 1 , wherein said nanowire-material composite comprises a plurality of nanowires with sufficient density to achieve an operational current level.

4. The process of claim 3 , wherein said nanowires have lengths between about 10 microns to about 20 microns long.

5. The process of claim 1 , wherein said second substrate is a semiconductor, glass, ceramic, polymer, metal or composite thereof.

6. The process of claim 1 , wherein said material of said nanowire-material composite is a polymer, prepolymer, ceramic, glass, metal or composite thereof.

7. The process of claim 1 , wherein said material of said nanowire-material composite is an elastomer, thermoplastic or thermosetting resin.

8. The process of claim 1 , wherein said attaching comprises:

coating said nanowire-material composite on said substrate.

9. The process of claim 1 , wherein (f) comprises:

metallizing said nanowires to form electrical connectivity to said nanowires.

10. The process of claim 9 , wherein said metallizing comprises:

metallizing said nanowires by e-beam evaporation.

11. The process of claim 9 , wherein said metallizing comprises:

(1) forming source and drain electrodes, whereby the nanowires form channels having a length between respective ones of the source and drain electrodes.

12. The process of claim 11 , wherein said metallizing further comprises:

(2) forming gate electrodes.

13. The process of claim 11 , wherein said nanowires are aligned approximately parallel to an axis between the source and drain electrodes.

14. The process of claim 9 , wherein said metallizing comprises:

forming anode and cathode electrodes.

15. The process of claim 12 , wherein (2) comprises:

forming a gate electrode on a surface of said nanowires such that the distance between said gate and said nanowires is equal to or less than 100 nanometers.

16. The process of claim 12 , wherein (2) comprises:

forming a gate electrode on a surface of said nanowires such that the distance between said gate and said nanowires is equal to or less than 5 nanometers.

17. The process of claim 1 , wherein step (a) comprises:

(1) forming said nanowires to include p-n junctions.

18. A process for producing an electronic substrate, comprising:

(a) forming a plurality of nanowires which include p-n junctions on a first substrate, the nanowires being formed from at least one light emitting semiconducting material such that said p-n junctions emit light during operation;

(b) depositing a material over at least a portion of the plurality of nanowires to form a nanowire-material composite;

(c) removing the nanowire-material composite from the first substrate;

(d) attaching the nanowire-material composite comprising the plurality of nanowires to a portion of a second substrate;

(e) patterning said nanowire-material composite to define one or more semiconductor device regions; and

(f) forming contacts at said semiconductor device regions to thereby provide electrical connectivity to said device regions.

19. The process of claim 18 , wherein step (a) comprises:

forming said nanowires from said at least one light emitting semiconducting material that includes at least one of GaN, GaP, GaAs, InP, InAs, ZnO and a combination thereof.

20. The process of claim 18 , further comprising:

(g) forming said nanowire-material composite from a plurality of nanowire-material composite layers,

wherein each said nanowire-material composite layer includes at least one of said at least one light emitting semiconducting materials selected to emit light at a wavelength different from other layers of said plurality of nanowire-material composite layers.

21. The process of claim 20 , further comprising:

(h) forming a first nanowire-material composite layer of said plurality of nanowire-material composite layers from at least one light emitting semiconducting material selected to emit light at a blue light wavelength;

(i) forming a second nanowire-material composite layer of said plurality of composite layers from at least one light emitting semiconducting material selected to emit light at a green light wavelength; and

(j) forming a third nanowire-material composite layer of said plurality of nanowire-material composite layers from at least one light emitting semiconducting material selected to emit light at a red light wavelength.

22. The process of claim 21 , further comprising:

coupling said first nanowire-material composite layer to a first surface of said second nanowire-material composite layer; and

coupling a second surface of said second nanowire-material composite layer to a first surface of said third nanowire-material composite layer.

Assignments (7)