Quantum dot light emitting layer
View Patent ↗An inorganic light emitting layer having a plurality of light emitting cores, each core having a semiconductor material that emits light in response to recombination of holes and electrons, each such light emitting core defining a first bandgap; a plurality of semiconductor shells formed respectively about the light emitting cores to form core/shell quantum dots, each such semiconductor shell having a second bandgap wider than the first bandgap; and a semiconductor matrix connected to the semiconductor shells to provide a conductive path through the semiconductor matrix and to each such semiconductor shell and its corresponding light emitting core so as to permit the recombination of holes and electrons.
1. An inorganic light emitting layer comprising:
(a) a plurality of light emitting cores, each core having a semiconductor material that emits light in response to recombination of holes and electrons, each such light emitting core defining a first bandgap;
(b) a semiconductor shell formed completely around each light emitting core to form core/shell quantum dots, each such semiconductor shell having a second bandgap wider than the first bandgap; and
(c) a semiconductor matrix including separate inorganic nanoparticles made of Type IV, III-V, or II-VI semiconductor material connected to the semiconductor shells to provide a conductive path through the semiconductor matrix and to each such semiconductor shell and its corresponding light emitting core so as to permit the recombination of holes and electrons, the inorganic nanoparticles having a different composition from that of the core/shell quantum dots.
2. The inorganic light emitting layer of claim 1 wherein each light emitting core includes a Type IV, III-V, or II-VI semiconductor material.
3. The inorganic light emitting layer of claim 2 wherein each light emitting core includes CdSe.
4. The inorganic light emitting layer of claim 1 wherein each semiconductor shell includes a Type II-VI semiconductor material.
5. The inorganic light emitting layer of claim 4 wherein each semiconductor shell includes ZnS.
6. The inorganic light emitting layer of claim 2 wherein each semiconductor shell includes a Type II-VI semiconductor material.
7. The inorganic light emitting layer of claim 1 wherein the bandgap of the semiconductor matrix material is within 0.2 eV of the bandgap of the semiconductor shell material.
8. A method of making an organic light emitting device comprising:
(a) a plurality of light emitting cores, each core having a semiconductor material that emits light in response to recombination of holes and electrons, each such light emitting core defining a first bandgap;
(b) a semiconductor shell formed completely around each light emitting core to form core/shell quantum dots, each such semiconductor shell having a second bandgap wider than the first bandgap; and
(c) a semiconductor matrix including separate inorganic nanoparticles made of Type IV, III-V, or II-VI semiconductor material connected to the semiconductor shells to provide a conductive path through the semiconductor matrix and to each such semiconductor shell and its corresponding light emitting core so as to permit the recombination of holes and electrons, the inorganic nanoparticles having a different composition from that of the core/shell quantum dots; further including:
(d) providing a colloidal dispersion of the core/shell quantum dots and semiconductor matrix nanoparticles;
(e) depositing the colloidal dispersion to form a film; and
(f) annealing the film to form an inorganic light emitting layer.
9. The method of claim 8 wherein the layer thickness is 10 to 100 nm.
10. The method of claim 8 wherein the deposited film is annealed at a temperature between 250 and 300 C for up to 60 minutes.
11. An inorganic light emitting device according to claim 1 comprising:
(a) spaced anode and cathode electrodes; and
(b) the inorganic light emitting layer disposed between the anode and cathode electrodes.
12. The inorganic light emitting device of claim 11 including a p-type transport layer disposed between the anode and inorganic light-emitting layer.
13. The inorganic light emitting device of claim 12 wherein the p-type transport layer includes p-type ZnSe, ZnS, or ZnTe.
14. The inorganic light emitting device of claim 12 wherein the conductivity of the p-type transport layer is enhanced by a dopant including nitrogen or lithium or both.
15. The inorganic light emitting device of claim 11 including a n-type transport layer disposed between the cathode and inorganic light-emitting layer.
16. The inorganic light emitting device of claim 15 wherein the n-type transport layer includes n-type ZnSe or ZnS.
17. The inorganic light emitting device of claim 15 wherein the conductivity of the n-type transport layer is enhanced by a Type III dopant including Al, In, or Ga.
18. The inorganic light emitting device of claim 12 including a n-type transport layer disposed between the cathode and inorganic light-emitting layer.
19. The inorganic light emitting device of claim 18 wherein the n-type transport layer includes n-type ZnSe, or ZnS.
20. The inorganic light emitting device of claim 18 wherein the conductivity of the n-type transport layer is enhanced by a Type III dopant including Al, In, or Ga.
21. An inorganic light emitting device according to claim 1 comprising:
(a) a substrate;
(a) an anode formed on the substrate and a cathode spaced from the anode; and
(b) the inorganic light emitting layer disposed between the anode and cathode.
22. The inorganic light emitting device of claim 21 wherein the substrate includes p-type semiconductor material.
23. The inorganic light emitting device of claim 22 wherein the light emitting layer is formed on one side of the substrate and the anode is formed on the other side of the substrate.
24. The inorganic light emitting device of claim 21 wherein the substrate is formed of glass, metal foil, or plastic and the anode is formed on the substrate.