Semiconductor light emitting element and method for fabricating the same
View Patent ↗Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.
1. A semiconductor light emitting element for emitting light, comprising:
a metal layer;
multiple group-III nitride semiconductor layers located on the metal layer and having an active layer, a first principle surface with projections and a second principle surface facing the metal layer and located under the first principle surface;
a first electrode being in contact with the first principle surface; and
a second electrode being in contact with the second principle surface,
wherein the metal layer has approximately the same area as the second principle surface, and
0.5λ/N≦L≦4λ/N is satisfied where L is a distance between the nearest two projections of the projections, λ is a wavelength of emitted light from the active layer, and N is a refractive index of the group-III nitride semiconductor comprising the projections.
2. The semiconductor light emitting element of claim 1 , wherein
a n-type group-III nitride semiconductor layer is provided in an upper part of the multiple group-III nitride semiconductor layers, and
the first principle surface is the upper surface of the n-type group-III nitride semiconductor layer.
3. The semiconductor light emitting element of claim 1 , wherein the projections are formed in the uppermost region of the multiple group-III nitride semiconductor layers.
4. The semiconductor light emitting element of claim 1 , wherein the thickness of the metal layer is equal to or more than 10 μm.
5. The semiconductor light emitting element of claim 1 ,
wherein the projections do not penetrate the active layer.
6. The semiconductor light emitting element of claim 1 ,
wherein the light is extracted through the first principal surface.
7. The semiconductor light emitting element of claim 1 ,
wherein the semiconductor light emitting element does not include a growth substrate used for growing the multiple group-III nitride semiconductor layers.