Magnetoresistive head and read/write separation-type magnetic head
View Patent ↗Embodiments of the invention provide a reading head structure that ensures a stable magnetic moment of a pinned layer against a great external magnetic field, and minimizes the pinned-layer damage occurring during air-bearing surface machining. In one embodiment, a magnetoresistive head is based on a spin-valve effect and has free layers, a stacked-type pinned layer, and an electroconductive nonmagnetic spacer layer positioned between the free layers and the stacked-type pinned layer. The stacked-type pinned layer includes three ferromagnetic films, and antiferromagnetic coupling films interposed between the ferromagnetic films. Of these ferromagnetic films, the first two films have a high coercivity and a high resistivity. The third ferromagnetic film is made of a material that gives a great magnetoresistive effect. The sum of the magnetic moments generated from the stacked-type pinned layer is substantially zero.
1. A magnetoresistive head comprising:
a substrate;
a lower magnetic shield film and an upper magnetic shield film, both disposed at the top of said substrate;
a stacked-type pinned layer and free layers, each disposed between said lower magnetic shield film and said upper magnetic shield film;
a nonmagnetic spacer layer disposed between said stacked-type pinned layer and said free layers;
magnetic domain control films disposed at both ends of each of said free layers; and
electrode films each arranged at the top of each of said magnetic domain control films;
wherein:
said stacked-type pinned layer includes only three ferromagnetic films, and antiferromagnetic coupling films each disposed between any two of said ferromagnetic films; and
of said ferromagnetic films, one ferromagnetic film adjacent to said nonmagnetic spacer layer has highly magnetoresistive characteristics with a Fe composition of 20 at % or less, and both of the other ferromagnetic films each have a coercivity and a resistivity higher than a coercivity and a resistivity of said highly magnetoresistive ferromagnetic film;
wherein said stacked-type pinned layer does not have an adjacent exchange-coupling layer.
2. The magnetoresistive head according to claim 1 , wherein magnetization directions of said ferromagnetic films constituting said stacked-type pinned layer are antiparallel to one another.
3. The magnetoresistive head according to claim 1 , wherein a sum of the magnetic moments generated by said stacked-type pinned layer is substantially zero.
4. The magnetoresistive head according to claim 1 , wherein coercivities of said other ferromagnetic films are at least 16 kA/m and resistivities thereof are at least 40 μΩcm.
5. The magnetoresistive head according to claim 1 , wherein said stacked-type pinned layer is disposed adjacently to said substrate, and said free layers are arranged at positions more distant from said substrate than a position of stacked-type pinned layer.
6. A magnetoresistive head comprising:
a substrate;
a lower magnetic shield film and an upper magnetic shield film, both disposed at the top of said substrate;
a stacked-type pinned layer and free layers, all disposed between said lower magnetic shield film and said upper magnetic shield film;
a nonmagnetic spacer layer disposed between said stacked-type pinned layer and said free layers;
magnetic domain control films disposed at both ends of each of said free layers; and
electrode films arranged each at the top of each of said magnetic domain control films;
wherein:
said stacked-type pinned layer has only three ferromagnetic films, and antiferromagnetic coupling films each disposed between any two of said ferromagnetic films; and
of said ferromagnetic films, one ferromagnetic film adjacent to said nonmagnetic spacer layer has a composition rate satisfying Co100-ZFez, 20≧Z(at %)≧0,
and both of the other ferromagnetic films, except the ferromagnetic film adjacent to said nonmagnetic spacer layer, each have a composition rate satisfying (Co1-YFeY)100-XMX, 0.8≧Y(at %)≧0.4, 12≧X(at %)≧2
where M is an element selected from the group consisting of V, Cr, Ti, Mo, Nb, Zr, and Ta;
wherein said stacked-type pinned layer does not have an adjacent exchange-coupling layer.
7. The magnetoresistive head according to claim 6 , wherein, except for said ferromagnetic film adjacent to said nonmagnetic spacer layer, film thicknesses of the other of said ferromagnetic films forming said stacked-type pinned layer are each at least about 1.2 nm.
8. The magnetoresistive head according to claim 6 , wherein said antiferromagnetic coupling films are Ru films, film thicknesses of which range from about 0.3 to 0.4 nm.
9. The magnetoresistive head according to claim 6 , wherein said stacked-type pinned layer is disposed on an underlayer.
10. A read/write separation-type magnetic head, comprising:
a magnetoresistive head including:
a substrate;
a lower magnetic shield film and an upper magnetic shield film, both of said films being disposed at the top of said substrate;
a stacked-type pinned layer and free layers, each of said layers being disposed between said lower magnetic shield film and said upper magnetic shield film;
a nonmagnetic spacer layer disposed between said stacked-type pinned layer and said free layers;
magnetic domain control films disposed at both ends of each of said free layers; and
electrode films each arranged at the top of each of said magnetic domain control films;
wherein said stacked-type pinned layer has only three ferromagnetic films, and antiferromagnetic coupling films each disposed between any two of said ferromagnetic films; one of said ferromagnetic films that is adjacent to said nonmagnetic spacer layer has highly magnetoresistive characteristics with a Fe composition of 20 at % or less, and both of the other ferromagnetic films each have coercive and resistive characteristics superior to coercive and resistive characteristics of said highly magnetoresistive ferromagnetic film; and
a magnetic recording head provided adjacently to said magnetoresistive head, said magnetic recording head including:
a lower magnetic film;
a magnetic gap film;
an upper magnetic film which is formed with a magnetic pole piece facing said lower magnetic film via said magnetic gap film; and
conductor coils each disposed between said lower magnetic film and said upper magnetic film
wherein said stacked-type pinned layer does not have an adjacent exchange-coupling layer.
11. The magnetoresistive head according to claim 10 , wherein magnetization directions of said ferromagnetic films constituting said stacked-type pinned layer are antiparallel to one another.
12. The magnetoresistive head according to claim 10 , wherein a sum of the magnetic moments generated by said stacked-type pinned layer is substantially zero.
13. The magnetoresistive head according to claim 10 , wherein coercivities of said other ferromagnetic films are at least 16 kA/m and resistivities thereof are at least 40 μΩcm.
14. The magnetoresistive head according to claim 10 , wherein said stacked-type pinned layer is disposed adjacently to said substrate, and said free layers are arranged at positions more distant from said substrate than a position of stacked-type pinned layer.