IP Library › Granted Patent US 7,682,964
Granted Patent B2
US 7,682,964 · App. 11/229,685 · Granted Mar 23, 2010

Method of forming a contact hole in a semiconductor device

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,682,964
App. No.
11/229,685
Granted
Mar 23, 2010
Kind
B2
Abstract

A semiconductor device includes a semiconductor substrate, a lower conductive layer formed over the semiconductor substrate, an intermediate insulating layer formed over the lower conductive layer and an upper conductive layer formed over the intermediate insulating layer. The upper conductive layer crosses the lower conductive layer. The semiconductor device also includes a contact hole formed at a crossing portion of the lower conductive layer and the upper conductive layer. The contact hole is formed in the intermediate insulating layer. An aspect ratio of the contact hole is greater than 0.6.

Claims (32)

1. A method for manufacturing a semiconductor device comprising:

forming a lower conductive layer over a semiconductor substrate;

forming a first intermediate insulating layer, wherein a first portion of the first intermediate insulating layer is directly over the lower conductive layer and a second portion of the first intermediate insulating layer is not over the lower conductive layer, wherein an upper surface of the first portion projects upwardly above an upper surface of the second portion of the first intermediate insulating layer;

forming an upper conductive layer over the first and second portions of the first intermediate insulating layer so that the upper conductive layer crosses over the lower conductive layer, the upper conductive layer having a first section that is directly over the first portion and a second section that is directly over the second portion, an upper surface of the first section projects upwardly above an upper surface of the second section;

forming a second intermediate insulating layer over the upper conductive layer;

etching the second intermediate insulating layer to form a projecting portion of the second intermediate insulating layer that covers at least the first section of the upper conductive layer; and

forming a contact hole through the projecting portion of the second intermediate insulating layer at a crossing portion of the lower conductive layer and the upper conductive layer directly over the first portion of the first intermediate insulating layer, wherein an aspect ratio of the contact hole is greater than 0.6.

2. A method for manufacturing a semiconductor device comprising:

forming a lower conductive layer over a semiconductor substrate;

forming a first intermediate insulating layer, wherein a first portion of the first intermediate insulating layer is directly over the lower conductive layer and a second portion of the first intermediate insulating layer is not over the lower conductive layer, wherein an upper surface of the first portion projects upwardly above an upper surface of the second portion of the first intermediate insulating layer;

forming an upper conductive layer over the first and second portions of the first intermediate insulating layer so that the upper conductive layer crosses over the lower conductive layer, the upper conductive layer having a first section that is directly over the first portion and a second section that is directly over the second portion, an upper surface of the first section projects upwardly above an upper surface of the second section;

forming a second intermediate insulating layer over the upper conductive layer;

forming a third intermediate insulating layer on the second intermediate insulating layer;

etching the third intermediate insulating layer to remove portions of the third intermediate insulating layer so that a projecting portion of the third intermediate insulating layer remains to cover at least the first section of the upper conductive layer; and

forming a contact hole through the second intermediate insulating layer and the projecting portion of the third intermediate insulating layer at a crossing portion of the lower conductive layer and the upper conductive layer directly over the first portion of the first intermediate insulating layer, wherein an aspect ratio of the contact hole is greater than 0.6.

3. A method for manufacturing a semiconductor device comprising:

forming a first conductive layer over a semiconductor substrate;

forming a first intermediate insulating layer, wherein a first portion of the first intermediate insulating layer is directly over the first conductive layer and a second portion of the first intermediate insulating layer is not over the first conductive layer, wherein an upper surface of the first portion projects upwardly above an upper surface of the second portion of the first intermediate insulating layer;

forming a lower conductive layer over the first and second portions of the first intermediate insulating layer so that the lower conductive layer crosses over the first conductive layer, the lower conductive layer having a first section that is directly over the first portion and a second section that is directly over the second portion, an upper surface of the first section projects upwardly above an upper surface of the second section;

forming a second intermediate insulating layer over the lower conductive layer;

forming a third intermediate insulating layer on the second intermediate insulating layer;

etching the third intermediate insulating layer to remove portions of the third intermediate insulating layer and so that a projecting portion of the third intermediate insulating aver remains to cover at least the first section of the upper conductive layer;

forming a contact hole through the second intermediate insulating layer and the projecting portion of the third intermediate insulating layer at a crossing portion of the lower conductive layer and the first conductive layer directly over the first portion of the first intermediate insulating layer, wherein an aspect ratio of the contact hole is greater than 0.6; and

forming an upper conductive layer over the third intermediate insulating layer and in contact with the lower conductive layer through the contact hole.

4. A method for manufacturing a semiconductor device comprising:

forming a first conductive layer over a semiconductor substrate;

forming a first intermediate insulating layer over the first conductive layer and the semiconductor substrate, wherein the first intermediate insulating layer has a convex portion directly over the first conductive layer and another portion directly over the semiconductor substrate, wherein an upper surface of the convex portion is above an upper surface of the another portion;

forming a lower conductive layer over the first and another portions of the first intermediate insulating layer, the lower conductive layer having a first section that is directly over the convex portion and a second section that is directly aver the another portion, an upper surface of the first section projects upwardly above an upper surface of the second section;

forming a second intermediate insulating layer over the lower conductive layer;

etching the second intermediate insulating layer to form a projecting portion of the second intermediate insulating layer that covers at least the first section of the lower conductive layer;

forming a contact hole through the projecting portion of the second intermediate insulating layer at a crossing portion of the lower conductive layer and the first conductive layer directly over the convex portion of the first intermediate insulating layer, wherein an aspect ratio of the contact hole is greater than 0.6; and

forming an upper conductive layer over the second intermediate insulating layer and in contact with the lower conductive layer through the contact hole.